JPS58147112A - 結晶成長装置 - Google Patents

結晶成長装置

Info

Publication number
JPS58147112A
JPS58147112A JP57030034A JP3003482A JPS58147112A JP S58147112 A JPS58147112 A JP S58147112A JP 57030034 A JP57030034 A JP 57030034A JP 3003482 A JP3003482 A JP 3003482A JP S58147112 A JPS58147112 A JP S58147112A
Authority
JP
Japan
Prior art keywords
reaction tube
gas
tube
wafer
steep
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57030034A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136691B2 (enExample
Inventor
Kazumi Kasai
和美 河西
Kenya Nakai
中井　建弥
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP57030034A priority Critical patent/JPS58147112A/ja
Publication of JPS58147112A publication Critical patent/JPS58147112A/ja
Publication of JPH0136691B2 publication Critical patent/JPH0136691B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3422—Antimonides

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
JP57030034A 1982-02-26 1982-02-26 結晶成長装置 Granted JPS58147112A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57030034A JPS58147112A (ja) 1982-02-26 1982-02-26 結晶成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57030034A JPS58147112A (ja) 1982-02-26 1982-02-26 結晶成長装置

Publications (2)

Publication Number Publication Date
JPS58147112A true JPS58147112A (ja) 1983-09-01
JPH0136691B2 JPH0136691B2 (enExample) 1989-08-02

Family

ID=12292530

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57030034A Granted JPS58147112A (ja) 1982-02-26 1982-02-26 結晶成長装置

Country Status (1)

Country Link
JP (1) JPS58147112A (enExample)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146478U (enExample) * 1974-05-20 1975-12-04

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50146478U (enExample) * 1974-05-20 1975-12-04

Also Published As

Publication number Publication date
JPH0136691B2 (enExample) 1989-08-02

Similar Documents

Publication Publication Date Title
Bass Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique
JPH0650744B2 (ja) カドミウム水銀テルル化物の製法
GB2140618A (en) Semiconductor manufacturing methods
EP0200766A1 (en) METHOD FOR EPITAXIAL GROWING ON CRYSTAL LAYERS IN THE GAS PHASE.
US4032370A (en) Method of forming an epitaxial layer on a crystalline substrate
US3994755A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
JPH04193799A (ja) 炭化珪素単結晶の製造方法
US4028147A (en) Liquid phase epitaxial process for growing semi-insulating GaAs layers
CN116516490A (zh) 一种厘米级单晶单层的MoS2薄膜及其快速制备方法
JPH02180796A (ja) 炭化珪素単結晶の製造方法
JPS58151397A (ja) 気相エピタキシヤル結晶製造方法
JPH0136691B2 (enExample)
US3563816A (en) Method for the vapor growth of semiconductors
JPS61275191A (ja) ＧａＡｓ薄膜の気相成長法
JP3141628B2 (ja) 化合物半導体素子及びその製造方法
JP3106526B2 (ja) 化合物半導体の成長方法
JP2539427B2 (ja) 炭化珪素半導体素子の製造方法
JP2813711B2 (ja) ▲ｉｉｉ▼−▲ｖ▼化合物半導体結晶への亜鉛拡散方法
JP2737990B2 (ja) 化合物半導体単結晶製造装置
JPS6390820A (ja) ３−５族化合物半導体の気相成長方法
JPH06105687B2 (ja) 分子線結晶成長装置
JPS5986215A (ja) ヒ化ガリウム結晶の気相成長方法
CA1278272C (en) Method of growing crystalline layers by vapour phase epitaxy
JPS6381813A (ja) 気相成長方法
DE3613021A1 (de) Verfahren zur herstellung eines sic-einkristall-halbleiters