JPS58139A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS58139A JPS58139A JP56098526A JP9852681A JPS58139A JP S58139 A JPS58139 A JP S58139A JP 56098526 A JP56098526 A JP 56098526A JP 9852681 A JP9852681 A JP 9852681A JP S58139 A JPS58139 A JP S58139A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- dropped
- semiconductor element
- detected
- deformation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/79—Apparatus for Tape Automated Bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/50—Tape automated bonding [TAB] connectors, i.e. film carriers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置の製造方法に係シ、特にフィルムキ
ャリヤ方式による同時ボンディング方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a simultaneous bonding method using a film carrier method.
通常、半導体を接続するフィルムキャリヤは、例えば３
５■幅で数ピツチのパー７オレーシ舊ン毎に半導体搭載
用の穴をあけた帯状の可撓性絶縁フィルムに銅箔を接着
し、写真蝕刻法により箔状のリードフレームが形成され
ている。このフィルムキャリヤに接続される半導体素子
は、ウェハ形態のワックス等による固着保持もしくは、
良品の半導体素子をボンディングステージに供給しこれ
を真空吸着保持する方法等によシ供給される。Typically, the film carrier connecting the semiconductors is e.g.
A foil-shaped lead frame is formed by bonding copper foil to a band-shaped flexible insulating film with holes for mounting semiconductors in each par 7 orifice hole of several pitches in width and by photo-etching. . Semiconductor elements connected to this film carrier are fixedly held by wax or the like in the form of a wafer, or
It is supplied by a method such as supplying a good quality semiconductor element to a bonding stage and holding it by vacuum suction.
第１図はこのフィルムキャリヤと半導体素子のボンディ
ング方法を説明する丸めの概略図であシ、第１図（ａ）
は半導体素子をワックス等で固着保持したもの、！１１
１図伽）は真空吸着保持したものである。Figure 1 is a rounded schematic diagram illustrating the method of bonding this film carrier and a semiconductor element.
is a semiconductor element fixed and held with wax etc. 11
Figure 1) shows the sample held by vacuum suction.
図に於て％１は半導体素子、２ａ、２ｂは半導体素子１
の保持基板であ）、３は保持基板２ａ、２ｂを真空吸着
保持しているポンディングステージであシ、半導体素子
１はそれぞれ保持基板２１に於てはワックス４によシ固
着保持され２ｂに於ては真空口５により真空吸着保持さ
れている。６は半導体素子１の電極パッドに漸威され九
突起電極（バンプ）、７は中央部に半導体素子ｌよシ少
し大きめの孔８が形成された絶縁体フィルム、９は絶縁
体フィルムに形成されたリードフレーム、１０けインナ
ーリード、１１はインナーリード１０とバンプ６とを押
えつけ熱圧着、共晶反応等によりボンディングするボン
ディングツール、１２はフィルムキャリヤガイドである
。In the figure, %1 is the semiconductor element, 2a and 2b are the semiconductor elements 1
3 is a bonding stage which holds the holding substrates 2a and 2b by vacuum suction, and the semiconductor element 1 is fixedly held by the wax 4 on the holding substrate 21 and 2b. In this case, it is held by vacuum suction by the vacuum port 5. 6 is a nine-protrusion electrode (bump) that is applied to the electrode pad of the semiconductor element 1; 7 is an insulating film with a hole 8 slightly larger than the semiconductor element L formed in the center; 9 is an insulating film formed on the insulating film. 11 is a bonding tool for pressing and bonding the inner leads 10 and bumps 6 by thermocompression bonding, eutectic reaction, etc., and 12 is a film carrier guide.
以上の様な配置に於て、フィルムキャリヤ方式のボンデ
ィングはボンディングツール１１４Ｄ先端部、インナー
リード１Ｇ、及び半導体素子１のバンプ６の三者を位置
合せられた後、ボンディングツール１１が下降しインナ
ーリード１０とバング６とを押えつけ各リードとバンプ
は同時ボンディングが行なわれる。更に第１図（ａ）に
於てはこのボンディングの際の熱により半導体素子１を
固着保持しているワックス４が軟化するのでボンディン
グ完了と同時に、保持基板２ａを真空吸着保持したまま
ボンディングステージ３の下方に移動する動作により、
ボンディングされた半導体素子１は保持基板２ａから分
離される。それから、ボンディングツール１１が上昇し
、フィルムキャリヤ７は１フレ一ム分矢印１３の方向に
送られるとともに、次Ｏボンディング対象の半導体素子
がボンディングステージ３の移１１１１によ）ｌンディ
ング位置に移される。また第１図Φ）に於てはボンディ
ング完了と同時にボンディングツール１１が上昇し保持
基板２ｂＯ真空口５によ〉真空吸着保持されている半導
体素子ｌの真空吸着保持が解かれ、フィルムキャリヤ７
は１フレ一ム分矢印１３０方向に送られるとともに１次
のボンディング対象の半導体素子がボンディングステー
ジに供給される。In the above arrangement, in film carrier bonding, after the tip of the bonding tool 114D, the inner lead 1G, and the bump 6 of the semiconductor element 1 are aligned, the bonding tool 11 is lowered and the inner lead 10 and the bump 6 are pressed down, and each lead and bump are simultaneously bonded. Furthermore, in FIG. 1(a), the wax 4 that firmly holds the semiconductor element 1 is softened by the heat during this bonding, so that at the same time as the bonding is completed, the bonding stage 3 is moved while the holding substrate 2a is being held by vacuum suction. Due to the downward movement of
The bonded semiconductor element 1 is separated from the holding substrate 2a. Then, the bonding tool 11 is raised, the film carrier 7 is sent by one frame in the direction of the arrow 13, and the semiconductor element to be next bonded is moved to the bonding position by the movement 1111 of the bonding stage 3. . Further, in FIG. 1 Φ), the bonding tool 11 rises at the same time as the bonding is completed, the vacuum suction holding of the semiconductor element l held by the vacuum suction of the holding substrate 2bO by the vacuum port 5 is released, and the film carrier 7
is sent by one frame in the direction of arrow 130, and the semiconductor element to be subjected to primary bonding is supplied to the bonding stage.
このようなポンディング動作に於てボンディング条件の
設定は、温度、荷重、ボンディング時間によシ行表われ
ボンディング構造、つまりバンプ及びインナーリードの
金属構成、形状、ボンディング部の面積等によりボンデ
ィング形態である熱圧着、共晶反応に最適な条件を選び
これを設定するものである。そしてこれらボンディング
条件の設定によシボンディング形状、ポンディ／グ強度
等のボンディング性に微妙な影響を及ぼしている。In such a bonding operation, the bonding conditions are determined by temperature, load, and bonding time, and the bonding structure is determined by the bonding structure, that is, the metal composition and shape of the bump and inner lead, the area of the bonding part, etc. The optimum conditions for a certain thermocompression bonding or eutectic reaction are selected and set. The setting of these bonding conditions has a subtle influence on the bonding properties such as the bonding shape and the pounding strength.
すなわち、荷重の設定に於ては高すぎるとせん断力によ
るインナーリード０ネ、り切れ、つぶれ変形異状による
周囲パターン等への接触というエツジタッチ、その他リ
ード変形等を起こしている。That is, if the load is set too high, shearing force may cause the inner lead to collapse, breakage, edge touching due to crushing and deformation abnormalities such as contact with surrounding patterns, and other lead deformations.
また１反対に低すぎるとポンディ／ダハガレ勢につなが
り、各種ポンディフグ形状不良等の発生をひき起こして
いる。同じく温度設定に於ても適性温度でないと温度衝
撃によるクラックの発生及び荷重設定の時と同じように
つぶれ変形量のちがいとして不良発生の原因となってく
る。この為ボンディング性の安定化という点から最適な
ボンディング条件の設定ということが重要視されてくる
。On the other hand, if it is too low, it leads to pondy/dahagare tendency, causing various types of pondy puffer shape defects. Similarly, when setting the temperature, if the temperature is not appropriate, cracks may occur due to temperature shock, and defects may occur as a result of a difference in the amount of crushing deformation, as in the case of setting the load. Therefore, from the viewpoint of stabilizing bonding properties, it is important to set optimal bonding conditions.
しかしいくら最適な条件を設定してもボンディング性に
於て多少のバラツキを発生させている。これはボンディ
ングに於ける位置決めズレによるボンディング面積０変
化による適性荷重の変化、インナーリード形成に於ける
精度及び金属構成等のバラツキ、ボンディングクールの
ツール面の摩耗及びツール面の温度分布のバラツキ等の
不確定要素によシボンディング形状、ボンディング強度
等に微妙な影響を与えボンディング性の安定化という点
から重大な問題点を含んでいる。そしてこれは多くの場
合ボンディング条件設定に於けるボンディングサイクル
の制御方法は＃Ｉｚ図に示すようにボンディングスター
ト、ボンディング動作、ボンディング終了まで、ボンデ
ィング条件設定の温度、荷重、ボンディング時間に対し
てタイムアツプ信号のみによってボンディング完了の命
令信号としておシ、あくまでも平均的かつ経験的なもの
から得られた条件設定によるものであり前記不確定要素
等によシ多少のバラツキを生じさせてしまう原因釦なっ
ている。However, no matter how optimal conditions are set, some variation occurs in bonding properties. This is due to changes in the appropriate load due to zero change in the bonding area due to positioning errors during bonding, variations in accuracy and metal composition in inner lead formation, wear on the bonding cool tool surface, variations in temperature distribution on the tool surface, etc. Uncertainty factors have a subtle effect on the bonding shape, bonding strength, etc., and this poses a serious problem in terms of stabilizing bonding properties. In many cases, the bonding cycle control method when setting bonding conditions is as shown in the #Iz diagram. This button is used as a command signal to complete bonding only, but it is based on condition settings obtained from average and empirical results, and is the cause of slight variations due to the aforementioned uncertain factors. .
本発明の目的は、ボンディングサイクル制御につぶれ変
形量の検出を加えるととＫよシこれまでの問題点を解決
する半導体装置の製造方法を提供するものである。SUMMARY OF THE INVENTION An object of the present invention is to provide a method for manufacturing a semiconductor device that solves the problems of the past when detecting the amount of crushing deformation is added to bonding cycle control.
本発明の半導体装置の製造方法線１例えば、ボンデ（ン
グサイクル制御の方法が従来の温度、荷重、ボンディン
グ時間設定に於るタイムアツプ信号のみＫよるものと異
なシ、ボンディング動作時に於てつぶれ変形量の検出を
行なわせる手段を有することを％徴とする。Manufacturing method for a semiconductor device according to the present invention Line 1 For example, if the bonding cycle control method is different from the conventional method in which only a time-up signal K is used for setting temperature, load, and bonding time, the amount of crushing deformation during the bonding operation is The characteristic is that the device has a means for detecting.
次に図面を用いて本発明の一実施例について詳述する。Next, one embodiment of the present invention will be described in detail using the drawings.
第３図、第４図、第５図は本発明の説明図であり、第３
図に於て、１４はボンディングスタート信号、１５ｂは
ボンディング条件、１６はボンディング動作、１８はつ
ぶれ量検出信号、１９はボンディング終了を示すもので
ある。＠４図に於て、２０はボンディングへ、ド部、２
１はボンディングツールを含む加圧部、２２はつぶれ検
出器である。第５図に於て、２３．２４Ｆｉつぶれ検出
器２２よりの出力電位を示すものである。本発明の方法
は、先ず第３図１５ｂに示すボンディング条件すなわち
従来のボンディング時間の設定にかえてつぶれ変形量の
設定が行なわれる。ボンディング動作１６はボンディン
グツール１１の先端部、インナーリード１０、及び半導
体素子１のバンプ６の三者が位置合せられた後ボンディ
ングスタート信号１４によシ開始される。そしてその動
作は第４図（ａ）に示すボンディングヘッド２０が下降
しけじめ、途中（ｂ）に示すようなボンディングツール
先端がインナーリード１０に接触する状態になる。この
時ボンディングヘッド部２０に取付けられ九つぶれ検出
器２２例えばマグネットセンサー等による出力は、原点
を示している。そして更にボンディングへ、ド部２０が
下降すると、（Ｃ）Ｋ示すようにボンディングへ、ド部
２０の加圧部２１はインナーリードｌＯとの接触によ）
下降せずボンディングへ、ド部２０の本体だけが下降し
はじめ、つぶれ検出器２２に於て、第５図２３に示すよ
うな出力電位を生じていき、ある設定電位に達した時そ
の信号で加熱が開始され熱圧着ボンディングが行なわれ
ていく。そして熱圧着ボンディングにより（ｄ）の様な
ボンディング部すなわちインナーリード１０及びバンプ
６に変形が起υ、今度はボンディングヘッド部２０の加
圧部２１だけが下降した状態になシつぶれ検出器２２に
於て出力電位の変動が起る。すなわちこの電位差がつぶ
れ変形量に相当しつぶれ変形量としてボンディング条件
に於て設定したある設定電位に違した時つぶれ検出信号
１８として出力しこれによってボンディング終了命令と
し、ボンディングヘッド２０を上昇させボンディング終
了１９とさせるものである。3, 4, and 5 are explanatory diagrams of the present invention.
In the figure, 14 is a bonding start signal, 15b is a bonding condition, 16 is a bonding operation, 18 is a crush amount detection signal, and 19 is an end of bonding. @ In figure 4, 20 goes to bonding, do part, 2
1 is a pressurizing section including a bonding tool, and 22 is a crush detector. In FIG. 5, the output potential from the 23.24Fi collapse detector 22 is shown. In the method of the present invention, first, the amount of crushing deformation is set in place of the bonding conditions shown in FIG. 315b, that is, the conventional setting of the bonding time. The bonding operation 16 is started by the bonding start signal 14 after the tip of the bonding tool 11, the inner lead 10, and the bump 6 of the semiconductor element 1 are aligned. In this operation, the bonding head 20 shown in FIG. 4(a) descends and the tip of the bonding tool comes into contact with the inner lead 10 as shown in FIG. 4(b). At this time, an output from a crush detector 22, such as a magnet sensor, attached to the bonding head section 20 indicates the origin. Then, when the do part 20 descends further into bonding, the pressurizing part 21 of the do part 20 comes into contact with the inner lead IO (as shown in (C)K)
Only the main body of the do portion 20 begins to descend without descending to the bonding state, and an output potential as shown in FIG. Heating is started and thermocompression bonding is performed. Then, due to thermocompression bonding, the bonding part, that is, the inner lead 10 and the bump 6 are deformed as shown in FIG. At this point, fluctuations in the output potential occur. That is, this potential difference corresponds to the amount of crushing deformation, and when the amount of crushing deformation differs from a certain set potential set in the bonding conditions, it is output as a crushing detection signal 18, which is used as a bonding termination command, and the bonding head 20 is raised to terminate the bonding. 19.
即ち、本発明の半導体装置の製造方法によるとボンディ
ング完了の信号をボンディング時にっぶれ変形量の検出
を行なわせることにょ勺安定したホ７７’インク形状を
提供し、しいてはボンディング強度の安定化にもつなが
シ最適ボンディング性に効果を示すことになる。That is, according to the method of manufacturing a semiconductor device of the present invention, a signal indicating the completion of bonding is used to detect the amount of deformation during bonding, thereby providing an extremely stable ink shape, thereby stabilizing the bonding strength. It also shows an effect on optimal bonding properties.
第１図はフィルムキャリヤ方式のボンディング方法を説
明する概略図、第２図は従来の半導体装置の製造方法に
於るボンディングサイクルの説明図、第３図は本発明の
実施例のボンディングサイクルの説明図、第４図は本発
明の実施例のボンディング動作図、第５図はつぶれ検出
器の出力信号図である。
図に於て、１・−・−半導体素子、２ａ、２ｂ・・・・
・・保持基板、３・−・・・・ボンディングステージ、
４・・・・・・ワックス、５・・・・・・真空口、６・
・・・−バンプ、７・−・・・・絶縁体フィルム、８・
・・・・・絶縁体フィルム孔、９０．。
・・・リードフレーム、１０・・・・−・インナーリー
ド、１１・・・・・・ボンディングツール、１２・・・
・・−フィルムキャリヤガイド、１３・・・・・・テー
プ送）方向、１４°°゛°°゛ボンデイングスタ一ト信
号、１５ａ、１５ｂ・・・°・・ボンディング条件、１
６−・・・・・ボンディング動作、１７・・・・−・タ
イムアツプ信号、１８・−・−・つぶれ検出信号、１９
・・・・・・ボンディング終了、２０°°°°゛°ボン
デイングヘツド、 ２１−−−−−・加圧部、２２−・
・・・・つぶれ検出器、２３．２４・・・・・・つぶれ
検出器の出力電位である。
七）１シ２ ノ ”し？コ
１５久
７′６
（（１） ＜ｂ）
（Ｃ） （ｄ ）番 ４
凹
／ｌｆ
蓼Ｓ図FIG. 1 is a schematic diagram illustrating a film carrier type bonding method, FIG. 2 is a diagram illustrating a bonding cycle in a conventional semiconductor device manufacturing method, and FIG. 3 is a diagram illustrating a bonding cycle in an embodiment of the present invention. 4 is a bonding operation diagram of an embodiment of the present invention, and FIG. 5 is an output signal diagram of the crush detector. In the figure, 1...-semiconductor element, 2a, 2b...
...Holding board, 3...Bonding stage,
4...Wax, 5...Vacuum port, 6.
...-Bump, 7.--Insulator film, 8.
...Insulator film hole, 90. . ...Lead frame, 10...--Inner lead, 11...Bonding tool, 12...
...-Film carrier guide, 13...Tape feed) direction, 14°°゛°°゛Bonding start signal, 15a, 15b...°...Bonding conditions, 1
6--Bonding operation, 17--Time-up signal, 18--Collapse detection signal, 19
・・・・・・Bonding completed, 20°°°°゛° bonding head, 21-------・pressure part, 22-・
...Collapse detector, 23.24... Output potential of the collapse detector. 7) 1 し 2 ノ ” し? こ 15 久 7' 6 ((1) <b) (C) (d) No. 4
Concave/lf Pagoda S figure
Claims (1)
の豪数個Ｏ電極とを同時Ｋかつ連続的に接続する半導体
装置の製造方法に於いて、ボンディング動作時にボンデ
ィング部のつぶれ変形量を検出しボンディング動作を制
御することを特徴とする半導体装置の製造方法。In a method for manufacturing a semiconductor device in which several inner leads of a lead frame and several O electrodes of a semiconductor element are connected simultaneously and continuously, the amount of crushing deformation of the bonding part is detected during the bonding operation, and bonding is performed. A method for manufacturing a semiconductor device characterized by controlling its operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098526A JPS58139A (en) | 1981-06-25 | 1981-06-25 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56098526A JPS58139A (en) | 1981-06-25 | 1981-06-25 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58139A true JPS58139A (en) | 1983-01-05 |
| JPH0126174B2 JPH0126174B2 (en) | 1989-05-22 |
Family
ID=14222107
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56098526A Granted JPS58139A (en) | 1981-06-25 | 1981-06-25 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58139A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01230240A (en) * | 1987-06-10 | 1989-09-13 | Hitachi Ltd | Method and apparatus for bonding |
| JPH01251729A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Inner-lead bonding apparatus |
| JPH0344041A (en) * | 1989-07-12 | 1991-02-25 | Shinkawa Ltd | Bonding method |
| JPH0388344A (en) * | 1989-08-31 | 1991-04-12 | Seiko Epson Corp | Bonding method of inner lead |
| JPH0397239A (en) * | 1989-09-11 | 1991-04-23 | Nec Corp | Method and equipment for bonding |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146350A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Ultrasonic wire bonding device |
-
1981
- 1981-06-25 JP JP56098526A patent/JPS58139A/en active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51146350A (en) * | 1975-06-11 | 1976-12-15 | Hitachi Ltd | Ultrasonic wire bonding device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01230240A (en) * | 1987-06-10 | 1989-09-13 | Hitachi Ltd | Method and apparatus for bonding |
| JPH01251729A (en) * | 1988-03-31 | 1989-10-06 | Toshiba Corp | Inner-lead bonding apparatus |
| JPH0344041A (en) * | 1989-07-12 | 1991-02-25 | Shinkawa Ltd | Bonding method |
| JPH0388344A (en) * | 1989-08-31 | 1991-04-12 | Seiko Epson Corp | Bonding method of inner lead |
| JPH0574223B2 (en) * | 1989-08-31 | 1993-10-18 | Seiko Epson Corp | |
| JPH0397239A (en) * | 1989-09-11 | 1991-04-23 | Nec Corp | Method and equipment for bonding |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0126174B2 (en) | 1989-05-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3747198A (en) | Tailless wedge bonding of gold wire to palladium-silver cermets | |
| US4877173A (en) | Wire bonding apparatus | |
| US5263246A (en) | Bump forming method | |
| EP0895281A1 (en) | Two-step projecting bump for semiconductor chip and method for forming the same | |
| JPS58139A (en) | Manufacture of semiconductor device | |
| JP2010153672A (en) | Apparatus and method for manufacturing semiconductor device | |
| JP2722886B2 (en) | Wire bonding equipment | |
| JP3244001B2 (en) | Work mounting method | |
| JP3300472B2 (en) | Bonding apparatus and method of manufacturing apparatus having bonding section | |
| JPH10189660A (en) | Flip chip connection circuit device | |
| JP3312847B2 (en) | Method of transferring resin to bumps for flip-chip mounting | |
| JPH05291260A (en) | Forming method for bump | |
| JP2002134563A (en) | Semiconductor manufacturing apparatus and semiconductor manufacturing method | |
| JPH08335603A (en) | Method of manufacturing semiconductor device | |
| JPH09153513A (en) | Manufacturing device of semiconductor device, method of manufacture the same, and device for mounting semiconductor device | |
| JP2954111B2 (en) | Wire bonding method and wire bonding apparatus | |
| JP3632534B2 (en) | Chip joining method | |
| JPH09199545A (en) | Part mounting apparatus and method thereof | |
| JPH11163027A (en) | Two-step wire bonding process | |
| JPS6344998Y2 (en) | ||
| JPH0382050A (en) | Bonding device for film carrier semiconductor device | |
| JPS6324630A (en) | Wire bonding equipment | |
| KR200198124Y1 (en) | Wire bonding apparatus | |
| JPH10270838A (en) | Method for mounting electronic component on printed board | |
| JPH0770564B2 (en) | Bonding device |