JPS6324630A - Wire bonding equipment - Google Patents
Wire bonding equipmentInfo
- Publication number
- JPS6324630A JPS6324630A JP61168410A JP16841086A JPS6324630A JP S6324630 A JPS6324630 A JP S6324630A JP 61168410 A JP61168410 A JP 61168410A JP 16841086 A JP16841086 A JP 16841086A JP S6324630 A JPS6324630 A JP S6324630A
- Authority
- JP
- Japan
- Prior art keywords
- heat block
- wire bonding
- heat
- bonding
- thermal expansion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims abstract description 11
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 4
- 229910001374 Invar Inorganic materials 0.000 claims description 3
- 239000007769 metal material Substances 0.000 abstract description 2
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000008188 pellet Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明はワイヤボンディング装置において、ワークを
加熱するヒートブロックの改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an improvement of a heat block for heating a workpiece in a wire bonding apparatus.
半導体装置の組立工程に２ける、半導体電極パッドと外
部リード端子を金属細線で結線するワイヤボンディング
工程においては、全自動ワイヤボンダが用いられている
が、このワイヤボンダにおいて、ボンディング時の土台
となり、しかもワークを加熱するものがヒートブロック
である。Fully automatic wire bonders are used in the wire bonding process in which semiconductor electrode pads and external lead terminals are connected using thin metal wires in the second assembly process of semiconductor devices. A heat block is what heats the.
ワイヤボンディング動作を第２図番ごて示すと。Figure 2 shows the wire bonding operation.
ＩＣペレット（８）をダイアタッチしたリードフレーム
（ロ）カラなるワークがヒートブロック＠上に送られ。The blank lead frame (b) to which the IC pellet (8) is attached is sent onto the heat block.
リードフレーム（ロ）をフレーム押え（９）が固定する
とＩＴＶカメラ（４）を用いてボンディング位置を認識
した後、ｘｙテーブル（２）が駆動されボンディングヘ
ッド（１）がＩＣペレット（８）の電極の上方へ移動し
、超音波ホーン＋３）が下降してキャピラリチップ（６
）の先端にできたワイヤの金属ボールをＩＣペレット（
８）の電極に押しつけ、超音波印加とヒートブロック（
ロ）の熱により超音波熱圧着が行われる。その後超音波
ホーン（３）が上昇しなからＸｙテーブル（２）が駆動
され。When the frame holder (9) fixes the lead frame (b), the bonding position is recognized using the ITV camera (4), the xy table (2) is driven, and the bonding head (1) attaches the electrode of the IC pellet (8). The ultrasonic horn +3) moves upward and the capillary tip (6) descends.
) is a metal ball of wire formed at the tip of an IC pellet (
8) Press it against the electrode, apply ultrasonic waves and heat block (
Ultrasonic thermocompression bonding is performed by the heat of b). After that, the XY table (2) is driven while the ultrasonic horn (3) is not raised.
ボンディングヘッド（１）がワイヤをリードフレーム（
ロ）のリード側ヘボンデイングし、次にポールが形成さ
れ、ボンディング１工程が終了する。The bonding head (1) connects the wire to the lead frame (
(b) Bonding is performed on the lead side, and then a pole is formed, and the first bonding process is completed.
従来のワイヤボンディング装置は、前述のワーり加熱用
ヒートブロックが一般的にステンレス鋼などで作られて
おり、熱膨張係数が２０ Ｘ １０−’７’Ｃと高いた
めに熱変形が起こっていることがボンデ１゛ング精度向
上の壁になっているという問題点があった。In conventional wire bonding equipment, the aforementioned heat block for heating the warp is generally made of stainless steel, etc., and thermal deformation occurs because the coefficient of thermal expansion is as high as 20 x 10-'7'C. This has been a problem in that it has become a barrier to improving bonding accuracy.
この発明は上記の様な理由により、熱変形が小さい超低
熱膨張合金を素材とするヒートブロックを用いて精度の
よいワイヤボンディング装置を得ることを目的とする。For the reasons mentioned above, it is an object of the present invention to obtain a highly accurate wire bonding device using a heat block made of an ultra-low thermal expansion alloy with small thermal deformation.
この発明に係るヒートブロックは、低熱膨張係数５ Ｘ
１０−６７’Ｃ以下の金属素材を用いたものである。The heat block according to the present invention has a low coefficient of thermal expansion of 5
A metal material of 10-67'C or less is used.
この発明により、ヒートブロックは熱による変形を最小
限におさえられ、高精度のワイヤボンディング装置が実
現できる。According to this invention, deformation of the heat block due to heat can be minimized, and a highly accurate wire bonding device can be realized.
＠１図に示すインバー合金を用いたヒートブロックを製
作した。A heat block using an invar alloy shown in Figure 1 was manufactured.
前述の超低熱膨張合金を使用することにより寸法変化が
ほとんどないため、高いボンディング精度の維持が可能
である。By using the ultra-low thermal expansion alloy described above, there is almost no dimensional change, so it is possible to maintain high bonding accuracy.
例を示すと、常温のヒートブロックの幅は１８ｍｍであ
るので、従来材料であれば、約２８０℃で。For example, the width of a heat block at room temperature is 18 mm, so if it is made of conventional material, it will heat at about 280 degrees Celsius.
０、１ ｍｍ伸びていたが、熱膨張係数の低い材料を用
いることによって、約０．００５〜０．０！５ｍｍの伸
びに押えることができる。The elongation was 0.1 mm, but by using a material with a low coefficient of thermal expansion, the elongation can be suppressed to about 0.005 to 0.0!5 mm.
又、上記実施例ではヒートブロック素材としてインバー
合金の使用時憂こついて説明したが、素材としてはセラ
ミックスの様に熱膨張係数が低く剛性があれば非金属で
もよく、上記実施例と同様の効果を奏する。Also, in the above example, we explained that it was difficult to use Invar alloy as the heat block material, but the material may be a non-metal as long as it has a low thermal expansion coefficient and rigidity, such as ceramics, and the same effect as in the above example can be achieved. play.
以上の様に、この発明によればヒートブロックの素材を
熱膨張係数が低い材料に変更したので。As described above, according to the present invention, the material of the heat block is changed to a material with a low coefficient of thermal expansion.
熱によるヒートブロックの変形量が少なくなり。The amount of deformation of the heat block due to heat is reduced.
ボンディング精度の向上が計れるため、ボンディング装
置の信頼性が向上できる効果がある。Since the bonding accuracy can be improved, there is an effect that the reliability of the bonding device can be improved.
第１図はこの発明に用いる素材の特徴を示した図、＠２
図はボンディング装置の概略図である。
図において、ｆｌ）はボンディングヘッド、（２）はＸ
ｙｆ−プル、＋３）はＵＳホー／、（４）はＩＴＶ力／
う、（５）はライト、（６）はキャピラリチップ、（７
）はワイヤ。
（８）はＩＣべＶツ）ｉ９）はフレーム押え、αＱはダ
イパッド、（ロ）はリードフレーム、（６）はヒートブ
ロック、（至）はヒーターである。
なお、因中同−符号は同一、または相当部分を示す。Figure 1 is a diagram showing the characteristics of the material used in this invention, @2
The figure is a schematic diagram of a bonding device. In the figure, fl) is the bonding head, (2) is
yf-pull, +3) is US Ho/, (4) is ITV force/
U, (5) is the light, (6) is the capillary chip, (7
) is a wire. (8) is an IC base, i9) is a frame holder, αQ is a die pad, (b) is a lead frame, (6) is a heat block, and (to) is a heater. Note that the same reference numerals in the table indicate the same or equivalent parts.
Claims (2)
ヒートブロックの材質に熱膨張係数が５×１０＾−＾５
以下の素材を用いたことを特徴とするワイヤボンディン
グ装置。(1) The material of the heat block for heating the workpiece used in the wire bonding process has a thermal expansion coefficient of 5 x 10^-^5
A wire bonding device characterized by using the following materials.
許請求の範囲第１項に記載のワイヤボンディング装置。(2) The wire bonding device according to claim 1, characterized in that Invar is used as the material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61168410A JPS6324630A (en) | 1986-07-17 | 1986-07-17 | Wire bonding equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61168410A JPS6324630A (en) | 1986-07-17 | 1986-07-17 | Wire bonding equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6324630A true JPS6324630A (en) | 1988-02-02 |
Family
ID=15867604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61168410A Pending JPS6324630A (en) | 1986-07-17 | 1986-07-17 | Wire bonding equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6324630A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2191717A2 (en) | 2008-07-24 | 2010-06-02 | Shin-Etsu Chemical Co., Ltd. | Acetate-containing mating disruptant and mating distruption method using the same |
| CN103439252A (en) * | 2013-09-09 | 2013-12-11 | 北京航空航天大学 | Device for folding flexible composite material strain energy rod |
-
1986
- 1986-07-17 JP JP61168410A patent/JPS6324630A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2191717A2 (en) | 2008-07-24 | 2010-06-02 | Shin-Etsu Chemical Co., Ltd. | Acetate-containing mating disruptant and mating distruption method using the same |
| CN103439252A (en) * | 2013-09-09 | 2013-12-11 | 北京航空航天大学 | Device for folding flexible composite material strain energy rod |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4877173A (en) | Wire bonding apparatus | |
| KR880008437A (en) | Semiconductor device, manufacturing method thereof and wire bonding apparatus used therein | |
| US5614113A (en) | Method and apparatus for performing microelectronic bonding using a laser | |
| JPS6324630A (en) | Wire bonding equipment | |
| US5080279A (en) | Method for tape automated bonding | |
| JP2000349099A (en) | Method of bonding with solder and manufacture of semiconductor device | |
| JPH0344040A (en) | Semiconductor device and its manufacture | |
| JPH0296342A (en) | Wire-bonding device | |
| CN220253187U (en) | Fixing jig for double-sided bonding wire long substrate PCB | |
| JPS6313337A (en) | Process of mounting semiconductor element | |
| JPS6153737A (en) | Electronic device assembling method and apparatus thereof | |
| JPH0344051A (en) | Wire bonding method | |
| JP2005079412A (en) | Method for manufacturing semiconductor device, and wire bonder used therefor | |
| JP3293757B2 (en) | Method of manufacturing lead frame assembly for manufacturing semiconductor device | |
| JP2519829B2 (en) | Heating device and mounting method using the same | |
| JPH01293553A (en) | Lead frame for resin-sealed semiconductor device | |
| JPH0379065A (en) | Lead frame for semiconductor device | |
| JPS59117238A (en) | Manufacture of semiconductor device | |
| JPH0287639A (en) | Circuit board structure | |
| JPH0563011A (en) | Structure of die bonder head | |
| JPH03206635A (en) | Manufacture of film-carrier semiconductor device | |
| JPS5994834A (en) | Lead frame | |
| JPH10199913A (en) | Wire-bonding method | |
| JPS59211240A (en) | Wire bonding method of semiconductor device | |
| JPS6120138B2 (en) |