JPS58139478A - アモルフアス太陽電池 - Google Patents

アモルフアス太陽電池

Info

Publication number
JPS58139478A
JPS58139478A JP57021047A JP2104782A JPS58139478A JP S58139478 A JPS58139478 A JP S58139478A JP 57021047 A JP57021047 A JP 57021047A JP 2104782 A JP2104782 A JP 2104782A JP S58139478 A JPS58139478 A JP S58139478A
Authority
JP
Japan
Prior art keywords
semiconductor layer
layer
amorphous
cell
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57021047A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6334634B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Kazuhiko Sato
和彦 佐藤
Genshiro Nakamura
中村　源四郎
Yoshinori Yukimoto
行本　善則
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP57021047A priority Critical patent/JPS58139478A/ja
Priority to US06/427,341 priority patent/US4479028A/en
Priority to DE19833305030 priority patent/DE3305030A1/de
Publication of JPS58139478A publication Critical patent/JPS58139478A/ja
Publication of JPS6334634B2 publication Critical patent/JPS6334634B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • H10F10/172—Photovoltaic cells having only PIN junction potential barriers comprising multiple PIN junctions, e.g. tandem cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/166—Amorphous semiconductors
    • H10F77/1662—Amorphous semiconductors including only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP57021047A 1982-02-15 1982-02-15 アモルフアス太陽電池 Granted JPS58139478A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP57021047A JPS58139478A (ja) 1982-02-15 1982-02-15 アモルフアス太陽電池
US06/427,341 US4479028A (en) 1982-02-15 1982-09-29 Amorphous solar cell
DE19833305030 DE3305030A1 (de) 1982-02-15 1983-02-14 Amorphe solarzelle

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57021047A JPS58139478A (ja) 1982-02-15 1982-02-15 アモルフアス太陽電池

Publications (2)

Publication Number Publication Date
JPS58139478A true JPS58139478A (ja) 1983-08-18
JPS6334634B2 JPS6334634B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-07-11

Family

ID=12044005

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57021047A Granted JPS58139478A (ja) 1982-02-15 1982-02-15 アモルフアス太陽電池

Country Status (3)

Country Link
US (1) US4479028A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS58139478A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3305030A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094091A (ja) * 1983-10-27 1985-05-27 Mitsubishi Rayon Co Ltd 光学活性カルボン酸エステルの製造法
JPS60240167A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS60240168A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS60240169A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US5039354A (en) * 1988-11-04 1991-08-13 Canon Kabushiki Kaisha Stacked photovoltaic device with antireflection layer

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2545275B1 (fr) * 1983-04-27 1987-03-06 Rca Corp Photodetecteur tandem
US4609771A (en) * 1984-11-02 1986-09-02 Sovonics Solar Systems Tandem junction solar cell devices incorporating improved microcrystalline p-doped semiconductor alloy material
US4686323A (en) * 1986-06-30 1987-08-11 The Standard Oil Company Multiple cell, two terminal photovoltaic device employing conductively adhered cells
DE3876322T2 (de) * 1987-07-13 1993-05-06 Oki Electric Ind Co Ltd Chipkarte mit solarzellenbatterie.
JPH0693519B2 (ja) * 1987-09-17 1994-11-16 株式会社富士電機総合研究所 非晶質光電変換装置
US5246506A (en) * 1991-07-16 1993-09-21 Solarex Corporation Multijunction photovoltaic device and fabrication method
US6166318A (en) * 1998-03-03 2000-12-26 Interface Studies, Inc. Single absorber layer radiated energy conversion device
US6657378B2 (en) * 2001-09-06 2003-12-02 The Trustees Of Princeton University Organic photovoltaic devices
US20070272297A1 (en) * 2006-05-24 2007-11-29 Sergei Krivoshlykov Disordered silicon nanocomposites for photovoltaics, solar cells and light emitting devices
TWI395337B (zh) * 2009-07-21 2013-05-01 Nexpower Technology Corp Solar cell structure
DE102010053382A1 (de) * 2010-12-03 2012-06-06 Forschungszentrum Jülich GmbH Verfahren zur Herstellung einer Solarzelle und eine Solarzelle

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55125680A (en) * 1979-03-20 1980-09-27 Yoshihiro Hamakawa Photovoltaic element
FR2464564A1 (fr) * 1979-08-28 1981-03-06 Rca Corp Batterie solaire au silicium amorphe
JPS5688377A (en) * 1979-12-19 1981-07-17 Mitsubishi Electric Corp Solar battery and manufacture thereof
JPS5694674A (en) * 1979-12-27 1981-07-31 Nec Corp Thin-film solar cell
US4377723A (en) * 1980-05-02 1983-03-22 The University Of Delaware High efficiency thin-film multiple-gap photovoltaic device
KR890004497B1 (ko) * 1980-09-09 1989-11-06 에너지 컨버션 디바이시즈, 인코포레이티드 다중 셀의 감광성 비정질 합금 및 소자

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6094091A (ja) * 1983-10-27 1985-05-27 Mitsubishi Rayon Co Ltd 光学活性カルボン酸エステルの製造法
JPS60240167A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置
JPS60240168A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
JPS60240169A (ja) * 1984-05-15 1985-11-29 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US5039354A (en) * 1988-11-04 1991-08-13 Canon Kabushiki Kaisha Stacked photovoltaic device with antireflection layer

Also Published As

Publication number Publication date
DE3305030A1 (de) 1983-08-25
US4479028A (en) 1984-10-23
DE3305030C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1992-05-21
JPS6334634B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-07-11

Similar Documents

Publication Publication Date Title
US4591892A (en) Semiconductor photoelectric conversion device
CN101221992B (zh) 多层膜-纳米线复合物、双面型和串联型太阳能电池
KR20080044183A (ko) 비정질-결정성 탠덤형 나노구조 태양전지
JPWO2005011002A1 (ja) シリコン系薄膜太陽電池
JPS58139478A (ja) アモルフアス太陽電池
JPH0370183A (ja) 光起電力素子
CN106531816A (zh) 一种背结背接触太阳能电池
CN102341919B (zh) 太阳能电池
US8704326B2 (en) Thin-film photoelectric conversion device and method for production thereof
CN101237000A (zh) 基于薄膜硅的多结光伏器件的纳米晶硅和非晶锗混合型吸收层
US20100043872A1 (en) Photovoltaic Device With an Up-Converting Quantum Dot Layer and Absorber
JP2001267598A (ja) 積層型太陽電池
US20100044675A1 (en) Photovoltaic Device With an Up-Converting Quantum Dot Layer
KR20100021845A (ko) 적층형 태양 전지
JPH0644638B2 (ja) 異質単位セル同士のスタック形光起電力素子
JPH0463550B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS609178A (ja) 光起電力装置
US4857115A (en) Photovoltaic device
JPH0125235B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS6225275B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR20090065894A (ko) 탠덤 구조 ｃｉｇｓ 태양전지 및 그 제조방법
US20130167918A1 (en) Photovoltaic device
JP2946214B2 (ja) 薄膜太陽電池
JPH0586677B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JPS60111478A (ja) 光起電力装置