JPS58137261A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS58137261A JPS58137261A JP57019117A JP1911782A JPS58137261A JP S58137261 A JPS58137261 A JP S58137261A JP 57019117 A JP57019117 A JP 57019117A JP 1911782 A JP1911782 A JP 1911782A JP S58137261 A JPS58137261 A JP S58137261A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- electrode
- gaas
- semiconductor device
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 14
- 239000010410 layer Substances 0.000 description 32
- 230000006866 deterioration Effects 0.000 description 9
- 239000000758 substrate Substances 0.000 description 6
- 238000005275 alloying Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 241000238631 Hexapoda Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/80—FETs having rectifying junction gate electrodes
- H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
Landscapes
- Bipolar Transistors (AREA)
- Junction Field-Effect Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57019117A JPS58137261A (ja) | 1982-02-09 | 1982-02-09 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57019117A JPS58137261A (ja) | 1982-02-09 | 1982-02-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58137261A true JPS58137261A (ja) | 1983-08-15 |
JPH0361339B2 JPH0361339B2 (enrdf_load_stackoverflow) | 1991-09-19 |
Family
ID=11990523
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57019117A Granted JPS58137261A (ja) | 1982-02-09 | 1982-02-09 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58137261A (enrdf_load_stackoverflow) |
-
1982
- 1982-02-09 JP JP57019117A patent/JPS58137261A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPH0361339B2 (enrdf_load_stackoverflow) | 1991-09-19 |
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