JPS58137261A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58137261A
JPS58137261A JP57019117A JP1911782A JPS58137261A JP S58137261 A JPS58137261 A JP S58137261A JP 57019117 A JP57019117 A JP 57019117A JP 1911782 A JP1911782 A JP 1911782A JP S58137261 A JPS58137261 A JP S58137261A
Authority
JP
Japan
Prior art keywords
layer
electrode
gaas
semiconductor device
ohmic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57019117A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0361339B2 (enrdf_load_stackoverflow
Inventor
Keiichi Ohata
恵一 大畑
Tomohiro Ito
伊東 朋弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57019117A priority Critical patent/JPS58137261A/ja
Publication of JPS58137261A publication Critical patent/JPS58137261A/ja
Publication of JPH0361339B2 publication Critical patent/JPH0361339B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00Field-effect transistors [FET]
    • H10D30/80FETs having rectifying junction gate electrodes
    • H10D30/87FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP57019117A 1982-02-09 1982-02-09 半導体装置 Granted JPS58137261A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57019117A JPS58137261A (ja) 1982-02-09 1982-02-09 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57019117A JPS58137261A (ja) 1982-02-09 1982-02-09 半導体装置

Publications (2)

Publication Number Publication Date
JPS58137261A true JPS58137261A (ja) 1983-08-15
JPH0361339B2 JPH0361339B2 (enrdf_load_stackoverflow) 1991-09-19

Family

ID=11990523

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57019117A Granted JPS58137261A (ja) 1982-02-09 1982-02-09 半導体装置

Country Status (1)

Country Link
JP (1) JPS58137261A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0361339B2 (enrdf_load_stackoverflow) 1991-09-19

Similar Documents

Publication Publication Date Title
DE2629203A1 (de) Feldeffekttransistor
JPS59121955A (ja) 接点構造体
US6852612B2 (en) Semiconductor device and method for fabricating the same
JPS59134874A (ja) 半導体装置の製造方法
JPS58137261A (ja) 半導体装置
JPS5860574A (ja) 電界効果トランジスタの製造方法
JPS5879773A (ja) 電界効果トランジスタ
JPH0496339A (ja) 電界効果トランジスタの配線構造
JPS59500542A (ja) N型GaAs用のオ−ム接触装置
JPH11307577A (ja) 半導体装置
JPS5880872A (ja) 半導体装置
JPS609150A (ja) 半導体装置
JPS6159782A (ja) 半導体装置
JPS58199533A (ja) 半導体装置
JPS58134428A (ja) 半導体装置の製造方法
JPS6128228B2 (enrdf_load_stackoverflow)
JPH02271638A (ja) 半導体素子
JPH0131310B2 (enrdf_load_stackoverflow)
AT247918B (de) Halbleiteranordnung mit einem durch Einlegieren einer Metallpille erzeugten pn-Übergang
JPS5864066A (ja) 金属半導体接合電極構造体及びその製造方法
JPS5986266A (ja) 薄膜トランジスタの製造方法
JPS5947755A (ja) 半導体装置
JPS60117771A (ja) 半導体装置
JPS5929466A (ja) 半導体装置
JPS6344994Y2 (enrdf_load_stackoverflow)