JPS58137240A - 半導体装置 - Google Patents
半導体装置Info
- Publication number
- JPS58137240A JPS58137240A JP1885682A JP1885682A JPS58137240A JP S58137240 A JPS58137240 A JP S58137240A JP 1885682 A JP1885682 A JP 1885682A JP 1885682 A JP1885682 A JP 1885682A JP S58137240 A JPS58137240 A JP S58137240A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- semiconductor device
- layer
- electrode
- logic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 239000013078 crystal Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 230000005679 Peltier effect Effects 0.000 claims abstract description 13
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 abstract description 6
- 229910003460 diamond Inorganic materials 0.000 abstract description 3
- 239000010432 diamond Substances 0.000 abstract description 3
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 230000015654 memory Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000005520 electrodynamics Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000003204 osmotic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/38—Cooling arrangements using the Peltier effect
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1885682A JPS58137240A (ja) | 1982-02-10 | 1982-02-10 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1885682A JPS58137240A (ja) | 1982-02-10 | 1982-02-10 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58137240A true JPS58137240A (ja) | 1983-08-15 |
JPS6314870B2 JPS6314870B2 (enrdf_load_stackoverflow) | 1988-04-01 |
Family
ID=11983174
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1885682A Granted JPS58137240A (ja) | 1982-02-10 | 1982-02-10 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58137240A (enrdf_load_stackoverflow) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222240A (ja) * | 1985-03-28 | 1986-10-02 | Matsushita Electronics Corp | 半導体装置 |
JPH01245549A (ja) * | 1988-03-26 | 1989-09-29 | Matsushita Electric Works Ltd | 半導体装置およびその製法 |
DE10136667A1 (de) * | 2001-07-27 | 2003-02-13 | Oliver Eibl | Peltierschenkel mit integrierter Diode |
RU168761U1 (ru) * | 2016-09-20 | 2017-02-17 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Устройство для охлаждения вторичных источников питания |
-
1982
- 1982-02-10 JP JP1885682A patent/JPS58137240A/ja active Granted
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61222240A (ja) * | 1985-03-28 | 1986-10-02 | Matsushita Electronics Corp | 半導体装置 |
JPH01245549A (ja) * | 1988-03-26 | 1989-09-29 | Matsushita Electric Works Ltd | 半導体装置およびその製法 |
DE10136667A1 (de) * | 2001-07-27 | 2003-02-13 | Oliver Eibl | Peltierschenkel mit integrierter Diode |
DE10136667C2 (de) * | 2001-07-27 | 2003-06-18 | Oliver Eibl | Peltierschenkel mit integrierter Diode |
RU168761U1 (ru) * | 2016-09-20 | 2017-02-17 | Акционерное общество "Научно-исследовательский институт "Полюс" им. М.Ф. Стельмаха" | Устройство для охлаждения вторичных источников питания |
Also Published As
Publication number | Publication date |
---|---|
JPS6314870B2 (enrdf_load_stackoverflow) | 1988-04-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US6563227B1 (en) | Temperature control method for integrated circuit | |
RU2010110307A (ru) | Наноструктуры с высокими термоэлектрическими свойствами | |
KR870004496A (ko) | 반도체 기억 장치 | |
US2862160A (en) | Light sensitive device and method of making the same | |
JPH0783108B2 (ja) | 半導体装置 | |
EP1065726A4 (en) | SEMICONDUCTOR SWITCHING DEVICE WITH SILICON CARBIDE | |
JPS58137240A (ja) | 半導体装置 | |
US2793332A (en) | Semiconductor rectifying connections and methods | |
US2968750A (en) | Transistor structure and method of making the same | |
GB1236157A (en) | Improvements in or relating to impatt diodes | |
WO2019090842A1 (zh) | 薄膜晶体管及显示装置 | |
CN209266411U (zh) | 一种高性能晶体管 | |
GB927214A (en) | Improvements in semi-conductor devices | |
CN103620764A (zh) | 具有半导体器件的基台的半导体单元 | |
US3310866A (en) | Mountings for power transistors | |
GB1017777A (en) | Improvements in and relating to semi-conductor devices | |
US3324361A (en) | Semiconductor contact alloy | |
JPS63150970A (ja) | 導電変調型絶縁ゲ−トトランジスタ | |
JPS6139575A (ja) | 半導体整流装置 | |
JPS5819138B2 (ja) | 半導体装置 | |
JPS6442813A (en) | Thin film single crystal substrate | |
RU2168799C1 (ru) | Полупроводниковый выпрямительный диод (варианты) | |
JPS6182450A (ja) | 半導体装置用パツケ−ジ | |
JPS5629359A (en) | Semiconductor memory device | |
JPS62143467A (ja) | 半導体集積回路 |