JPS5629359A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5629359A JPS5629359A JP10459879A JP10459879A JPS5629359A JP S5629359 A JPS5629359 A JP S5629359A JP 10459879 A JP10459879 A JP 10459879A JP 10459879 A JP10459879 A JP 10459879A JP S5629359 A JPS5629359 A JP S5629359A
- Authority
- JP
- Japan
- Prior art keywords
- layers
- electrode
- memory device
- density
- gate electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE:To contrive the increase in density of a semiconductor memory device by confronting other gate electrodes at the position of both side surfaces of the gate electrodes at the position of both side surfaces of the gate electrode of one MOSFET to easily dispose large capacity memory device in matrix array. CONSTITUTION:A gate electrode 6 is formed on a region between layers 3 and 4 thrugh P type source 3, drain 4 and insulating film 5 on an N type substrate 1. Further, other gate electrodes 10, 11 are arranged at both sides of the electrode 6 in X and Y directions for connecting the layers 3 and 4. The P-N junction between the substrate 1 and the layers 3, 4 is reversely biased to connect a depletion layer 13 between the layers 3 and 4, and a pulse voltage is selectively applied between the electrode 6, the layers 10, 11 and the substrae 1 to store a number of carriers in the substrate surface under the electrode 6 to write information ''1'', a power supply is connected through a load between the layers 3 and 4 to read information ''1''. This configuration enables a number of matrix arrays to easily increase the density thereof and obtain a memory device of large capacity and density.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54104598A JPS5828745B2 (en) | 1979-08-17 | 1979-08-17 | semiconductor storage device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54104598A JPS5828745B2 (en) | 1979-08-17 | 1979-08-17 | semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5629359A true JPS5629359A (en) | 1981-03-24 |
| JPS5828745B2 JPS5828745B2 (en) | 1983-06-17 |
Family
ID=14384856
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54104598A Expired JPS5828745B2 (en) | 1979-08-17 | 1979-08-17 | semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5828745B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029400U (en) * | 1983-08-01 | 1985-02-27 | 株式会社 水戸理化ガラス | Deuterium discharge tube lighting device |
| DE112008001832T5 (en) | 2007-07-13 | 2010-06-17 | Hamamatsu Photonics K.K., Hamamatsu | Control device for a discharge lamp and light source device |
| US8314557B2 (en) | 2007-06-28 | 2012-11-20 | Hamamatsu Photonics K.K. | Light source device, discharge lamp and its control method |
-
1979
- 1979-08-17 JP JP54104598A patent/JPS5828745B2/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6029400U (en) * | 1983-08-01 | 1985-02-27 | 株式会社 水戸理化ガラス | Deuterium discharge tube lighting device |
| US8314557B2 (en) | 2007-06-28 | 2012-11-20 | Hamamatsu Photonics K.K. | Light source device, discharge lamp and its control method |
| DE112008001832T5 (en) | 2007-07-13 | 2010-06-17 | Hamamatsu Photonics K.K., Hamamatsu | Control device for a discharge lamp and light source device |
| US8193740B2 (en) | 2007-07-13 | 2012-06-05 | Hamamatsu Photonics K.K. | Controller for discharge lamp and light source device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5828745B2 (en) | 1983-06-17 |
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