JPS58125871A - 多セル形サイリスタ - Google Patents
多セル形サイリスタInfo
- Publication number
- JPS58125871A JPS58125871A JP21938682A JP21938682A JPS58125871A JP S58125871 A JPS58125871 A JP S58125871A JP 21938682 A JP21938682 A JP 21938682A JP 21938682 A JP21938682 A JP 21938682A JP S58125871 A JPS58125871 A JP S58125871A
- Authority
- JP
- Japan
- Prior art keywords
- region
- electrode
- regions
- impurity concentration
- turn
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 49
- 239000000758 substrate Substances 0.000 claims description 40
- 239000012535 impurity Substances 0.000 claims description 37
- 230000035945 sensitivity Effects 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 235000021395 porridge Nutrition 0.000 claims 1
- 238000007562 laser obscuration time method Methods 0.000 description 37
- 239000000969 carrier Substances 0.000 description 14
- 238000009792 diffusion process Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000000295 complement effect Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000005215 recombination Methods 0.000 description 5
- 230000006798 recombination Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 oxides Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Landscapes
- Thyristors (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US33104981A | 1981-12-16 | 1981-12-16 | |
| US391620 | 1982-06-24 | ||
| US331049 | 1994-10-28 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58125871A true JPS58125871A (ja) | 1983-07-27 |
| JPS6141146B2 JPS6141146B2 (enrdf_load_stackoverflow) | 1986-09-12 |
Family
ID=23292412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21938682A Granted JPS58125871A (ja) | 1981-12-16 | 1982-12-16 | 多セル形サイリスタ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58125871A (enrdf_load_stackoverflow) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253275A (ja) * | 1984-04-26 | 1985-12-13 | ゼネラル・エレクトリツク・カンパニイ | 高密度ｖ溝型ｍｏｓ制御型サイリスタ、絶縁ゲ−ト型トランジスタおよびｍｏｓｆｅｔ、並びに製造方法 |
| JPS6112072A (ja) * | 1984-06-27 | 1986-01-20 | Hitachi Ltd | 半導体装置 |
| JPS63136569A (ja) * | 1986-11-17 | 1988-06-08 | ゼネラル・モータース・コーポレーション | 横方向複式ゲート・サイリスタとその製造方法 |
| JPS63194366A (ja) * | 1987-02-09 | 1988-08-11 | Toshiba Corp | 高耐圧プレ−ナ型半導体素子 |
| JPS63288064A (ja) * | 1987-05-20 | 1988-11-25 | Toshiba Corp | 複合サイリスタ |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5453726B2 (ja) * | 2008-03-28 | 2014-03-26 | サンケン電気株式会社 | サイリスタ |
-
1982
- 1982-12-16 JP JP21938682A patent/JPS58125871A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60253275A (ja) * | 1984-04-26 | 1985-12-13 | ゼネラル・エレクトリツク・カンパニイ | 高密度ｖ溝型ｍｏｓ制御型サイリスタ、絶縁ゲ−ト型トランジスタおよびｍｏｓｆｅｔ、並びに製造方法 |
| JPS6112072A (ja) * | 1984-06-27 | 1986-01-20 | Hitachi Ltd | 半導体装置 |
| JPS63136569A (ja) * | 1986-11-17 | 1988-06-08 | ゼネラル・モータース・コーポレーション | 横方向複式ゲート・サイリスタとその製造方法 |
| JPS63194366A (ja) * | 1987-02-09 | 1988-08-11 | Toshiba Corp | 高耐圧プレ−ナ型半導体素子 |
| JPS63288064A (ja) * | 1987-05-20 | 1988-11-25 | Toshiba Corp | 複合サイリスタ |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6141146B2 (enrdf_load_stackoverflow) | 1986-09-12 |
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