JPS5812346A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5812346A
JPS5812346A JP11053381A JP11053381A JPS5812346A JP S5812346 A JPS5812346 A JP S5812346A JP 11053381 A JP11053381 A JP 11053381A JP 11053381 A JP11053381 A JP 11053381A JP S5812346 A JPS5812346 A JP S5812346A
Authority
JP
Japan
Prior art keywords
circuit
output
circuits
logic
selective means
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11053381A
Other languages
Japanese (ja)
Inventor
Akira Aso
麻生 明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11053381A priority Critical patent/JPS5812346A/en
Publication of JPS5812346A publication Critical patent/JPS5812346A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118Masterslice integrated circuits
    • H01L27/11801Masterslice integrated circuits using bipolar technology

Abstract

PURPOSE:To materialize a plural kinds of logic levels by a kind of integrated circuit by a method wherein plural kinds of circuits having different circuit forms or logic levels are previously established and a desired circuit out of the said plural kinds of circuits or a plurality of circuits are selectively used. CONSTITUTION:In the drawing, P is an internal logic circuit and is entirely composed of current switching type logic circuits. g1-gm show output circuit sections and each output bit includes a CML circuit feeding out collector output as a direct output terminal, an ECL circuit feeding out collector output through an emitter follower and a TTL circuit, and a desired circuit type out of these three kinds of circuit types can be selected by selective means. When the selective means of g1-g4 in the drawing are connected, the output Z1 becomes the output of CML level and when the selective means of h1-h4 are connected, the output Z1 becomes the output of ECL level. When the selective means of i1- i8 are connected, the Z1 output becomes TTL output.

Description

【発明の詳細な説明】 本発明は半導体集積論理回路の回路構成に関する。集積
回路を構成する回路形式として、TTL。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a circuit configuration of a semiconductor integrated logic circuit. TTL is a circuit format that constitutes an integrated circuit.

CML、WCL、C−MO8等それぞれ論理レベルの異
なる多数種類の回路形式が知られているが、一般には集
積回路は前記回路形式のうちいずれか一種類の回路形式
で構成される。しかるに、コンビニしり等(搭載される
集積回路に対して要求される性能は、それらが使用され
る部位によって異なり特に大型高性能コンビーータ等で
は一種類の論理ンベルで統一されることは極めてまれで
ある。
Although many types of circuit formats such as CML, WCL, and C-MO8 are known, each having a different logic level, an integrated circuit is generally constructed of one of the above circuit formats. However, the performance required for integrated circuits installed in convenience stores etc. varies depending on the part in which they are used, and it is extremely rare for a single type of logic circuit to be unified, especially in large high-performance converters. .

例えば高速動作の要求されるCPU部にはCML又はE
CL等の高速集積回路を周辺制御等はMO8系列等の比
較的低速動作の集積回路を適用するというような方策が
システム設計の常套手段としてとられる。この場合、同
一システム内で論理レベルの異なる信号の送受が行なわ
れることになシ、必然的にレベル変換回路の使用が余儀
なくされるが、システムにおいて、このレベル変換回路
の存在は必ずしも利点のみを提供するものではない。
For example, for a CPU section that requires high-speed operation, CML or E
It is common practice in system design to use relatively low-speed operating integrated circuits such as the MO8 series for peripheral control of high-speed integrated circuits such as CL. In this case, since signals with different logic levels are transmitted and received within the same system, it is inevitable that a level conversion circuit must be used, but the presence of this level conversion circuit in the system does not necessarily have only advantages. It is not provided.

例えばレベル変換回路自身に要するスペースのため、実
装密度は下がるし、消費電力は増大する。
For example, the space required for the level conversion circuit itself reduces packaging density and increases power consumption.

また電源ライン信号ライン長も増えるため、布線密度は
高くなる。更に、信号伝達速度の面からみると、このレ
ベル変換回路を通過する分だけ遅延時間は増大するわけ
で、これもやはり欠点の一つとなる。
Furthermore, since the power supply line signal line length also increases, the wiring density increases. Furthermore, from the standpoint of signal transmission speed, the delay time increases by the amount that the signal passes through this level conversion circuit, which is also a drawback.

本発明は前記のごとき、レベル変換回路の問題点を解消
すべく入出力部に従来ない回路構成を適用した新し一半
導体集積論理回路を提供するものである。本発明の手導
体集積論理回路は各入力部および各出力部のそれぞれに
回路形式又は論理レベルの異なる複数種類の回路をあら
かじめ施設しておき、該複数種類の回路のうち所望の一
箇又は複数筒の回路を選択的に使用できるようにしたも
のである。
The present invention provides a new semiconductor integrated logic circuit in which a non-conventional circuit configuration is applied to the input/output section in order to solve the problems of the level conversion circuit as described above. In the hand conductor integrated logic circuit of the present invention, a plurality of types of circuits having different circuit types or logic levels are installed in each input section and each output section in advance, and a desired one or more of the plurality of types of circuits are installed. This allows the cylinder circuit to be used selectively.

すなわち本発明の手段によれば入力信号の論理レベルと
、出力信号論理レベルが異なる場合でもまったく問題な
く外部にレベル変換のための手段を一切必要としなio
一般に論理レベルti異なってiても機能そのものはま
ったく同一といった集積回路は極めて多く、特に基本的
な演算等に使用される集積回路はこの傾向にある。従り
てこれらの集積回路は同一機能であシながらその回路形
式、製造プロセスが異なるために、バイポーラ系列から
MO8系列に亘り異品種の集積回路として設計、製造さ
れなければならなφ。これは従来の集積回路に対する思
想からすれば当然のことであるが、本発明は一種類の集
積回路によって複数種の論理レベルを実現すべく発想の
転換をはかったものである。
That is, according to the means of the present invention, even if the logic level of the input signal and the logic level of the output signal are different, there is no problem at all and no external means for level conversion is required.
In general, there are extremely many integrated circuits whose functions are exactly the same even if their logic levels ti are different, and this tendency is especially true for integrated circuits used for basic calculations. Therefore, although these integrated circuits have the same function, their circuit formats and manufacturing processes are different, so they must be designed and manufactured as different types of integrated circuits ranging from the bipolar series to the MO8 series. This is natural from the perspective of conventional integrated circuits, but the present invention is an attempt to change the way of thinking in order to realize multiple types of logic levels using one type of integrated circuit.

本発明における論理レベルおよび回路形式の選択手段、
選択工程は一様ではなく、必要に応じた選択手段の選択
又は選択1輸の位置づけが可能である。このため論理レ
ベルの選択工程の位置づけによシ選択の方法は若干異な
ってくるが、iかなる選択方法がとられても最終的に所
望の入出力論理レベルが選択される前の工程まではまり
たく一種類の集積回路として製造することができる。従
って内部論理が共通であるような集積回路社すべて、本
発明の手段を講じることが可能であり、しかも−わゆる
品種毎の設計は、最終の論理レベルの選択工程のみにつ
−で行なわれればよく回路設計の重複を避けることがで
きるため、TAT(ターノア2り/ドタイム)Fi短か
くな9、生産効率(量産性)紘顕著に向上する。
Logic level and circuit type selection means in the present invention,
The selection process is not uniform, and it is possible to select a selection means or position a selection method as necessary. For this reason, the selection method differs slightly depending on the positioning of the logic level selection process, but no matter which selection method is used, it will not work until the process before the final desired input/output logic level is selected. It can be manufactured as one type of integrated circuit. Therefore, it is possible for all integrated circuit companies whose internal logic is common to implement the measures of the present invention, and the so-called product-specific design is performed only in the final logic level selection process. Since duplication of circuit design can be avoided, TAT (turnover time) can be shortened and production efficiency (mass productivity) can be significantly improved.

前記の論理レベル選択の具体的な方法としてマスクプロ
グラマブルあるiはフィールドプロゲラ!プルと%/−
hりた形式が想起されるが、それら−ずれについても構
成上特に問題となる点はなく、従来技術によって容易に
実現出来うるものである。
A specific method for selecting the logic level mentioned above is the mask programmable i is field progera! Pull and %/-
Although different formats may come to mind, these deviations do not pose a particular problem in terms of construction and can be easily realized using conventional techniques.

本発明は、更に、従来の集積回路構成法のうち例えばP
LA(プログラマブルロジックアレイ)や、ゲートアレ
イの様な、多品種少量とiう市場の要求から生れた比較
的新し一手法とめ併用も可能であること社iうまでもな
―。
The present invention further provides a method for configuring a conventional integrated circuit, such as P.
It goes without saying that it is possible to use a relatively new method such as LA (programmable logic array) and gate array, which was born out of the market demand for high-mix low-volume products.

周知の如(、PLAやゲートアレイによる多品種の実現
は論理機能につめてのみであり入出力の論理レベル又は
回路形式まで変更可能な手法ではな−。
As is well known, the realization of a wide variety of products using PLA and gate arrays is limited only to logic functions, and is not a method that allows changes to the input/output logic level or circuit format.

従りてこれらの従来手法に本発明を併用すれば一品種の
論a設計によりて、論理機能、および論理レベルの異な
る多品種の集積回路が実現されるわけで、本発明が従来
集積回路に極めて高i汎用性を付与することは明白であ
る。
Therefore, if the present invention is used in combination with these conventional methods, a wide variety of integrated circuits with different logic functions and logic levels can be realized by a single type of logic design, and the present invention is superior to conventional integrated circuits. It is clear that it provides extremely high i versatility.

以下図面により本発明につ−て更に説明を加える。The present invention will be further explained below with reference to the drawings.

第1図は、従来の思想に基づく集積回路の構成を示すも
ので、それぞれの入出力部には拳−の論理レベルしか存
在しな一0極まれには内部の論理レベルと入出力部の論
理レベルが異なる集積回路も存在するが、論理レベルの
選択まで可能にしたものではなく、旧来の集積回路とな
んら変わるところはなめ、第一図中、aは内部論理回路
を示し、bとはそれぞれ入力、出力回路を示す。
Figure 1 shows the configuration of an integrated circuit based on the conventional concept, in which each input/output section has only a few logic levels. There are integrated circuits with different levels, but they do not make it possible to select the logic level, and there is no difference from conventional integrated circuits.In Figure 1, a indicates an internal logic circuit, and b indicates each Input and output circuits are shown.

第2図は本発明の回路の基本構想を示すもので、dが内
部論理回路部、e、fがそれぞれ入力、出力回路部に相
当する。8部およびf部にお−て各入力線および出力線
はそれぞれ複数の被選択回路を有し、各入出力線につ−
て所望の回路が選択手段A目〜Amm 、B目〜B11
11 、C目〜cek、Dt 1〜Dekによって選択
される0選択されない回路はすべて論理的に非接続状態
となる。
FIG. 2 shows the basic concept of the circuit of the present invention, where d corresponds to an internal logic circuit section, and e and f correspond to input and output circuit sections, respectively. In the 8th part and the f part, each input line and output line each have a plurality of selected circuits, and each input/output line has a plurality of selected circuits.
The desired circuits are selection means A~Amm, B~B11.
11, Cth~cek, Dt 0 selected by 1~Dek All circuits that are not selected are logically disconnected.

前記選択手段によシ、各入出力にクーて入力の信号、お
よび出力送端デバイスの論理レベルに見合った選択が可
能であるが、当然のことながら各入出力で互−に論理レ
ベルの異なる回路が選択されても本発明の主旨にはずれ
るものではない。
The selection means allows selection according to the input signal to each input/output and the logic level of the output sending end device, but it goes without saying that each input/output may have a different logic level. No matter which circuit is selected, it does not depart from the spirit of the invention.

第2図にお−ては、選択手段の具体的な方法については
記載して−な−が本発明はその選択手段の具体的な手法
を規定するものではない。従って選択のためにプログラ
ム手段として通常採用されるマスクによる選択点の変更
、あるーはPN接合破壊やフェーズ切断の手法を用−る
フィールドでのプログラム手段等、いかなる選択方法を
も本発明実施の手法として適用されうろことは−うまで
もな―。
Although the specific method of the selection means is not described in FIG. 2, the present invention does not specify the specific method of the selection means. Therefore, any selection method, such as changing the selected point using a mask, which is usually employed as a programming means for selection, or field programming means using PN junction destruction or phase cutting techniques, can be used in the implementation of the present invention. It goes without saying that scales are applied as a method.

第3図は本発明の一実施例を部分的に示したものである
FIG. 3 partially shows an embodiment of the present invention.

Pは内部論理回路ですべて電流切換製論理回路によりて
構成されて―る。gt〜g鵬は出力回路部を示し、それ
ぞれの出力ピットに紘コレクタ出力が直接出力端子とし
て取9出せるCML回路、コレクタ出力がエミッタホロ
ワを介して出力されるgCL回路およびTTL回路が含
まれてお9、これら三種類の回路タイプのうち所望の回
路タイプが選択手段によって選択される。
P is an internal logic circuit, which is entirely composed of current switching logic circuits. gt to gpeng indicate the output circuit section, and each output pit includes a CML circuit where the Hiro collector output can be taken directly as an output terminal, a gCL circuit and a TTL circuit where the collector output is output via an emitter follower. 9. A desired circuit type is selected from these three circuit types by the selection means.

図中gt〜g4の選択手段が接続された場合、出力Z1
はCMLレベルの出力となj>、ht〜h4の選択手段
が接続された場合出力z1はECLレベルの出力となる
。又、11〜i8の選択手段が接続された場合zl出力
はTTLレベル出力となる。
When the selection means gt to g4 in the figure are connected, the output Z1
is a CML level output, and when the selection means ht to h4 are connected, the output z1 is an ECL level output. Further, when the selection means 11 to i8 are connected, the zl output becomes a TTL level output.

第3図にお−ては簡琳のため内部論理回路部と出力回路
部につ−てのみ示したが、入力回路にお−ても複数の回
路タイプを施設しておけば、 gtの出力回路と同様の
手段により、所望の回路タイプを選択使用できることは
−うまでもなし。
In Fig. 3, only the internal logic circuit section and output circuit section are shown for simplicity, but if multiple circuit types are installed in the input circuit, the gt output It goes without saying that a desired circuit type can be selected and used using the same means as the circuit.

以上の如く、本発明はその主旨が簡明であるとともにな
んら特殊な集積回路技術を用−ることなく、従来技術に
よシ達成しうるためその実現も極めて容易でちゃ、新し
i集積回路として十分有効性のあるものと考える。
As described above, the gist of the present invention is simple, and it can be achieved using conventional technology without using any special integrated circuit technology, so it is extremely easy to realize it. We believe that it is sufficiently effective.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の集積回路図、第2図は本発明の集積回路
の基本構成図、ll!3図紘本発明の一実施例を示す図
である。P・・・・・・内部論理回路、gt〜gm入t
へ 茅31¥1
FIG. 1 is a conventional integrated circuit diagram, and FIG. 2 is a basic configuration diagram of the integrated circuit of the present invention. FIG. 3 is a diagram showing an embodiment of the present invention. P...Internal logic circuit, gt to gm input t
Hecha 31 yen 1

Claims (1)

【特許請求の範囲】[Claims] 各入力部および各出力部のそれぞれに回路形式又は論理
レベルの異なる複数種類の回路をあらかじめ施設してお
き、該複数種類の回路のうち所望の1箇又は複数筒の回
路を選択的に使用できるようにしたことを特徴とする半
導体集積回路。
Multiple types of circuits with different circuit types or logic levels are installed in each input section and each output section in advance, and a desired one or multiple circuits from among the multiple types of circuits can be selectively used. A semiconductor integrated circuit characterized by:
JP11053381A 1981-07-15 1981-07-15 Semiconductor integrated circuit Pending JPS5812346A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11053381A JPS5812346A (en) 1981-07-15 1981-07-15 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11053381A JPS5812346A (en) 1981-07-15 1981-07-15 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5812346A true JPS5812346A (en) 1983-01-24

Family

ID=14538214

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11053381A Pending JPS5812346A (en) 1981-07-15 1981-07-15 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5812346A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60214555A (en) * 1984-04-09 1985-10-26 Mitsubishi Electric Corp Semiconductor integrated circuit device
EP0430147A2 (en) * 1989-11-27 1991-06-05 Hitachi, Ltd. Semiconductor gate array device compatible with ECL signals and/or TTL signals

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631730B1 (en) * 1970-09-02 1981-07-23

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5631730B1 (en) * 1970-09-02 1981-07-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60214555A (en) * 1984-04-09 1985-10-26 Mitsubishi Electric Corp Semiconductor integrated circuit device
JP2574742B2 (en) * 1984-04-09 1997-01-22 三菱電機株式会社 Semiconductor integrated circuit device
EP0430147A2 (en) * 1989-11-27 1991-06-05 Hitachi, Ltd. Semiconductor gate array device compatible with ECL signals and/or TTL signals

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