JPS58122702A - Method of producing voltage nonlinear resistor - Google Patents

Method of producing voltage nonlinear resistor

Info

Publication number
JPS58122702A
JPS58122702A JP57003364A JP336482A JPS58122702A JP S58122702 A JPS58122702 A JP S58122702A JP 57003364 A JP57003364 A JP 57003364A JP 336482 A JP336482 A JP 336482A JP S58122702 A JPS58122702 A JP S58122702A
Authority
JP
Japan
Prior art keywords
nonlinear resistor
voltage nonlinear
producing voltage
small
current range
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57003364A
Other languages
Japanese (ja)
Inventor
丹野 善一
成田 広好
大熊 英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57003364A priority Critical patent/JPS58122702A/en
Publication of JPS58122702A publication Critical patent/JPS58122702A/en
Pending legal-status Critical Current

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  • Compositions Of Oxide Ceramics (AREA)
  • Thermistors And Varistors (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 発明の技術分野 本発明は電圧非直−抵抗体の1Jla方法&:関する。[Detailed description of the invention] Technical field of invention The present invention relates to a 1Jla method of voltage non-resistance.

発明の技術的背景と問題点 従来の電圧非WiIII抵抗体の製造方法はZnOを主
成分とし、副成分としてBi、O,、B、blO,、(
! oH0g 。
Technical Background and Problems of the Invention The conventional method for manufacturing voltage non-WiIII resistors uses ZnO as the main component and Bi, O, , B, blO, , (
! oH0g.

MnO、ム40.などの金#l咳化物を少量添加し、こ
れを1合、成形した後、 1100〜1300℃の温度
で焼成し一紬体を得るものであった。この様にし工得ら
れた域圧非TlLi111抵抗体は#i直−性に優れ、
T−ジ1収P@嵩子として植々の振器に便用されている
。しかし電力用aiiiの内部費業とし便用いる場合6
;は次の様な欠点があった0丁なわち餉撃電流を印加し
た場合、その特性変化が大きく、又大電流域の非−線輪
性も十分でなくかつlll1遠ロツト4二より小電流域
特性のバラツキも大きいという欠点!を有していた。
MnO, Mu40. After adding a small amount of gold #1 cough compound such as #1 and molding it, it was fired at a temperature of 1,100 to 1,300°C to obtain a pongee. The region pressure non-TlLi111 resistor obtained in this way has excellent #i directivity,
It is conveniently used as a shaker for plants as T-ji 1-yaku P@Dakako. However, if it is conveniently used as an internal cost business for electricity AIII, 6
; has the following drawbacks: When a striking current is applied, the characteristics change greatly, and the non-linearity in the large current range is not sufficient, and it is smaller than the 42. The disadvantage is that the current range characteristics vary greatly! It had

ところで、従来大電流域の#I龜麿性を&lITる方法
としては、 ZnO結晶中に機敏のムtイオン、Gaイ
オン、Inイオン等をIa軸結中拡散さセ。
By the way, the conventional method for controlling the #I resistance in the large current range is to diffuse sensitive Mut ions, Ga ions, In ions, etc. into the Ia axis in the ZnO crystal.

ZnOの比抵抗を下げるいわゆる原子価制御法が知られ
ている。そして、ム4Gm、In等の成分は数−数百P
PMの微量で影響を与える。しかしながら、主成分のZ
nOやimW7.分ととも一二単に島台してこれを焼結
する従来の書法では、これら超微量のムへ’ Ga、 
xn成分が十分にZnOZnO結晶中6二分散されず大
部分はスピネル結晶および粒界相へ取り込まれてし直っ
ていた。このことが小電流域特性および備′S電流感二
対する特性の安定化を十分はかることができない原因と
なっていたと考えられる。
A so-called valence control method for lowering the specific resistance of ZnO is known. The components such as Mu4Gm and In are several to several hundred P.
Even small amounts of PM have an effect. However, the main component Z
nO and imW7. In the conventional method of sintering the sintering process, these ultra-trace amounts of Ga'Ga,
The xn component was not sufficiently bidispersed in the ZnOZnO crystal, and most of it was incorporated into the spinel crystal and grain boundary phase. This is thought to be the reason why it was not possible to sufficiently stabilize the small current range characteristics and the characteristics with respect to the current sensitivity.

また1合条件のわずかの変化でもム4Ga%I−成分O
JZ*O結晶への拡散状態が変動し、このことがロフト
間の特性のバッフ中の原因となっていたと考えられる。
In addition, even a slight change in the 1-coupling conditions will cause the 4Ga%I-component O
It is thought that the state of diffusion into the JZ*O crystal fluctuated, and this was the cause of the buffing of the characteristics between lofts.

発明の目的 本発明は、これらの欠点に鑑みなされたもので。Purpose of invention The present invention was made in view of these drawbacks.

疲れた大電流域特性、衝撃電流特性を有し、小電流域特
性のバッフ中も小さい電圧非mat抗体の装造方法を提
供することを目的とする。
It is an object of the present invention to provide a method for fabricating a non-mat antibody having tired large current range characteristics and impact current characteristics, and having a small voltage during buffing of small current range characteristics.

発明の1llt11 本発明は、例えばム4 Ga、 Inの少くとも一種類
を含む有機酸塩・1例えば、ナフテン酸塩、ステアリン
酸塩)を主成分のZnOとあらかじめ温合し、くり、そ
の後この仮焼物にその他の鋼成分(11,Os、Boo
@、0010g、 MnOなと)を添加混合し、コノ混
合物を成形した後、焼成することをその特徴とする。
1llt11 of the invention The present invention is characterized in that, for example, an organic acid salt containing at least one type of Mu4 Ga or In (e.g. naphthenate, stearate) is warmed in advance with ZnO as the main component, and then this is heated. Other steel components (11, Os, Boo
The characteristics of this method include adding and mixing MnO, 0010 g, MnO, etc., molding the mixture, and then firing it.

発明の実&例 以下本発明を実施例−二もとすき説明する。まず主成分
ZnOとす7テン酸アル1=ウムの全量を秤飯、これに
ブチルアルコールを加えてポットミルで混合、乾燥後8
00℃で仮焼する。これをポットミルで粉砕機副成分と
してBi、O,、8b、O,、co、o、、MnO等を
溢加し、成形した後、これを電気炉に入れ12500で
2nr暁成し、冷却後研磨を行い45φX22tmの焼
結体を得た。研磨向にムを溶射を行い電極付を行った。
DETAILED DESCRIPTION OF THE INVENTION The present invention will be described below with reference to two examples. First, the main components ZnO and the total amount of aluminum 7thenate were weighed, then butyl alcohol was added to this, mixed in a pot mill, and after drying,
Calcinate at 00℃. This was molded in a pot mill to which Bi, O, , 8b, O, , co, o, , MnO, etc. were added as sub-components of the pulverizer, and then this was placed in an electric furnace and heated at 12,500 to 2nr, and after cooling. Polishing was performed to obtain a sintered body of 45φ×22tm. Electrodes were attached by thermal spraying in the direction of polishing.

この様C;シて得られた電圧非[1M抵抗体の大電流域
1;おける非直線性は素子1=101ムの電流を流した
時の電圧(v101ム)とlIlムの電流を流した時の
電圧(V1mム)の比(VIOKム/vllム)で表わ
した。又衝撃電流特性は8820μsIO!ムを30秒
間隔で101印加した後のV1mムの変化率で表わした
。箪1表に本発明の実施例と従来例を壱々lOロットナ
ンプリングして比較した・第1表 又固自に本発明例と従来例の小電流域特性を示す(V1
imi/V0.1m1)の値t’100ツ)比較し、そ
のバラツキの状11v示した。SX*および図血力1ら
 □明白な様に、大電流域特性(VIOKνηlム)、
衝撃電流特性(Δvl鵬ム一)および小電tIt域特性
(v1mム/VO51龜ム)のいずれもが改善され、し
かも各ロフト間の特性上のバラツキも小さくその特性か
着しく安定化されている。これら特性の改善および安定
性が増した要因としては、ステアリン酸アルミニ、りム
をあらかじめZnOと混合仮焼することによりznOへ
ムを成分の拡散が十分均一に行われた為であると考えら
れる。
The nonlinearity in the large current range 1 of the 1M resistor obtained by C; It is expressed as the ratio (VIOKum/vllum) of the voltage (V1mm) when the voltage is applied. Also, the impact current characteristic is 8820μsIO! It was expressed as the rate of change in V1mm after applying 101 mm at 30 second intervals. Table 1 compares the embodiments of the present invention and the conventional example by lot numbering ・Table 1 also specifically shows the small current range characteristics of the inventive example and the conventional example (V1
The value t'100 of imi/V0.1m1) was compared, and the variation thereof was shown. SX* and Blood Power 1 etc. □As is obvious, large current range characteristics (VIOKνηlm),
Both the shock current characteristics (Δvl) and the small current range characteristics (v1mm/VO51) have been improved, and the variations in the characteristics between each loft are also small and the characteristics are well stabilized. There is. The reason for these improvements in properties and increased stability is thought to be that aluminum stearate and rim were pre-mixed and calcined with ZnO, allowing the components to diffuse sufficiently uniformly into the ZnO hem. .

発明の他の実施例 冑、ステアリン酸ガリウム、ステアリン酸インジウム、
ナフテン酸アル電ニウム、ナフテン酸ガツウム、ナフテ
ン酸インジクム等でも同様の結果が得られた。又、ナフ
テン酸塩、ステアリン酸塩は低温で溶解することからZ
nOと混合仮焼する温度も比較的低温でよいことから、
Z!10の焼結性を損うことがなく極めて効果的である
Other embodiments of the invention: helmet, gallium stearate, indium stearate,
Similar results were obtained with aldenium naphthenate, gallium naphthenate, indicium naphthenate, and the like. In addition, naphthenate and stearate dissolve at low temperatures, so Z
Since the temperature for mixing and calcination with nO can be relatively low,
Z! It is extremely effective without impairing the sinterability of No. 10.

発明の詳細 な説明した様に1本発明によれば大電流域特性、衝撃電
流特性、小電流域特性が改善され且つ各製造ロフトの特
性変動(バッフ中)も小さい電、rL非!kwIA抵抗
体な提供できる・
As described in detail of the invention, according to the present invention, large current area characteristics, impact current characteristics, and small current area characteristics are improved, and the characteristic fluctuations of each manufacturing loft (during buffing) are also small. kwIA resistor can be provided.

【図面の簡単な説明】[Brief explanation of drawings]

図面は従来例と本発明に係る製造ロフトの小電流域特性
のバラツキを示す比較特性図である。 (7317)代理人 弁理士 則 近 憲 佑(ほか1
名)
The drawing is a comparative characteristic diagram showing variations in small current region characteristics of manufacturing lofts according to the conventional example and the present invention. (7317) Agent Patent Attorney Noriyuki Chika (and 1 others)
given name)

Claims (1)

【特許請求の範囲】 1、主成分のZn0J:、ム1.Qa%Inの少(とも
一種類を含む有機酸塩を添加温合し、この諷合物を仮焼
し、この仮焼物に副成分としてIli、O,、Bb、O
,,0olO1,MnOなとの金属酸化物を添加温合し
、この混合物を成形した後焼成する電圧非ms抵抗体の
製造方法。 2、有ms塩はす7テン鎖埴、ステアリン酸塩である特
許請求の範囲第1項記載の電圧非W線抵仇体の製造方法
[Claims] 1. Main component Zn0J: 1. An organic acid salt containing a small amount of Qa%In is added and heated, this mixture is calcined, and this calcined product contains Ili, O,, Bb, O as subcomponents.
, 0olO1, MnO, etc. are added and heated, the mixture is molded, and then fired. 2. The method for producing a voltage non-W wire resistor according to claim 1, wherein the ms salt is a stearate.
JP57003364A 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor Pending JPS58122702A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003364A JPS58122702A (en) 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003364A JPS58122702A (en) 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor

Publications (1)

Publication Number Publication Date
JPS58122702A true JPS58122702A (en) 1983-07-21

Family

ID=11555289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003364A Pending JPS58122702A (en) 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS58122702A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238603A (en) * 1989-03-13 1990-09-20 Ngk Insulators Ltd Manufacture of voltage-dependent nonlinear resistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238603A (en) * 1989-03-13 1990-09-20 Ngk Insulators Ltd Manufacture of voltage-dependent nonlinear resistor

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