GB931597A - Improvements in or relating to resistors - Google Patents

Improvements in or relating to resistors

Info

Publication number
GB931597A
GB931597A GB4242759A GB4242759A GB931597A GB 931597 A GB931597 A GB 931597A GB 4242759 A GB4242759 A GB 4242759A GB 4242759 A GB4242759 A GB 4242759A GB 931597 A GB931597 A GB 931597A
Authority
GB
United Kingdom
Prior art keywords
antimony
resistance
dec
maximum
hours
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4242759A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens AG
Original Assignee
Siemens and Halske AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens AG filed Critical Siemens and Halske AG
Publication of GB931597A publication Critical patent/GB931597A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H01C7/025Perovskites, e.g. titanates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4682Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01CRESISTORS
    • H01C7/00Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Non-Adjustable Resistors (AREA)
  • Conductive Materials (AREA)

Abstract

931,597. Semi-conductor devices. SIEMENS & HALSKE A.G. Dec. 14, 1959 [Dec. 17, 1958], No. 42427/59. Class 37. A high positive temperature coefficient resistor comprises a ceramic of Perovskite structure including barium and titanium as major constituents and antimony as a doping material, the proportion of antimony being such as to produce a ratio of the maximum resistance to the resistance at the Curie temperature which is at least 90% of the highest magnitude obtainable by doping with antimony. Where the basic ceramic material is of the formula (Ba x Sr 1 - x )TiO 3 the quantity of antimony required to produce a maximum value of the maximum resistance ratio varies with the value of x as shown in Fig. 2, although the maximum value itself is substantially independent of x. An exemplary material with a positive temperature coefficient of resistance over the range 0-100‹ C. is made by mixing antimony oxide, barium carbonate, strontium carbonate and titanium dioxide in the molecular proportions 0.005: 0.6: 0.4:1, 1, heating the mix at a rate of 300‹ C. per hour to 1000‹ C., maintaining at 1000‹ C. for 2 hours, and then cooling to 500‹ C. in 3 hours. The resulting product is ground to a fine powder which is pressed into shape and sintered in an oxidising atmosphere at 1360‹ C. for 10 minutes, and subsequently cooled.
GB4242759A 1958-12-17 1959-12-14 Improvements in or relating to resistors Expired GB931597A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DES0061023 1958-12-17

Publications (1)

Publication Number Publication Date
GB931597A true GB931597A (en) 1963-07-17

Family

ID=7494565

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4242759A Expired GB931597A (en) 1958-12-17 1959-12-14 Improvements in or relating to resistors

Country Status (4)

Country Link
DE (1) DE1415430B2 (en)
FR (1) FR1234479A (en)
GB (1) GB931597A (en)
NL (1) NL245159A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1913960C3 (en) * 1969-03-14 1983-01-20 Matsushita Electric Industrial Co., Ltd., Kadoma, Osaka Method for producing a PTC thermistor element
JPS5220291A (en) * 1975-08-08 1977-02-16 Tdk Corp Semiconductor porcelain composition
DE3019098C2 (en) * 1980-05-19 1983-02-10 Siemens AG, 1000 Berlin und 8000 München Ceramic PTC thermistor material and process for its manufacture

Also Published As

Publication number Publication date
FR1234479A (en) 1960-10-17
NL245159A (en)
DE1415430B2 (en) 1972-02-10
DE1415430A1 (en) 1969-03-13

Similar Documents

Publication Publication Date Title
US5686367A (en) Semiconducting ceramic composition having positive temperature coefficient of resistance and production process thereof
US2976505A (en) Thermistors
GB714965A (en) Improvements in or relating to semi-conductive material
US4384989A (en) Semiconductive barium titanate
JPH0226866A (en) Semiconductor ceramic composition
US3044968A (en) Positive temperature coefficient thermistor materials
US4254070A (en) Process for producing sintered body of ceramic composition for voltage non-linear resistor
US3373120A (en) Semiconductive ceramic compositions with positive temperature coefficient of resistance
US2981699A (en) Positive temperature coefficient thermistor materials
Alberta et al. Preparation of phase-pure perovskite lead indium niobate ceramics
GB931597A (en) Improvements in or relating to resistors
US4033906A (en) Ceramics having nonlinear voltage characteristics and method for producing same
US3533966A (en) Process for making current limiting devices
US4175060A (en) Composition and processing procedure for making thermistors
US3468799A (en) Piezoelectric ceramic materials
EP0810612B1 (en) Oxide ceramic thermistor containing indium
US2735824A (en) Method of manufacturing semi-
GB1390279A (en) Manganese-zinc ferrites
US3472779A (en) Piezoelectric ceramic materials
GB1486945A (en) Electric resistance devices
GHAUT The annealing effect on the conduction mechanism of copper ferrite
KR790000886B1 (en) Oxide megativity resistor
US3506596A (en) Semiconducting ceramic compositions with positive temperature coefficient of resistance
JPH0196055A (en) Superconductive ceramic composition
GB900771A (en) Resistors and methods for the manufacture thereof