GB714965A - Improvements in or relating to semi-conductive material - Google Patents

Improvements in or relating to semi-conductive material

Info

Publication number
GB714965A
GB714965A GB12720/52A GB1272052A GB714965A GB 714965 A GB714965 A GB 714965A GB 12720/52 A GB12720/52 A GB 12720/52A GB 1272052 A GB1272052 A GB 1272052A GB 714965 A GB714965 A GB 714965A
Authority
GB
United Kingdom
Prior art keywords
temperature
sintering
per cent
barium titanate
barium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB12720/52A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB714965A publication Critical patent/GB714965A/en
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
    • C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
    • C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
    • C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
    • C04B35/4682—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates based on BaTiO3 perovskite phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/02—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient
    • H01C7/022—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances
    • H01C7/023—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material having positive temperature coefficient mainly consisting of non-metallic substances containing oxides or oxidic compounds, e.g. ferrites
    • H01C7/025—Perovskites, e.g. titanates

Abstract

A method of manufacturing sintered semiconductive materials having a resistivity of less than 106 ohm/cm is characterised in that to a mass primarily comprising barium titanate or to a mixture of substances capable of producing such a mass upon heating is added per mol. of barium titanate in a total quantity of not more than 1.5 atomic per cent. at least one of the elements yttrium and bismuth and/or in a total quantity of not more than 0.8 atomic per cent. at least one of the rare earth metals, antimony and tungsten, preferably in the form of a compound, the sintering being carried out after moulding, at a temperature between 1050 DEG C. and 1500 DEG C., preferably between 1300 DEG C. and 1400 DEG C., in an atmosphere of which the partial oxygen pressure at the sintering temperature is at least 0.05 mm. The barium titanate may be produced by sintering barium oxide and titanium dioxide; preferably there is an excess of up to 20 molecular per cent. of titanium dioxide. The barium may be partly replaced by strontium, calcium or lead, and the titanium by silicon, germanium, zironium or tin. The invention provides compositions for resistors required to be temperature-independent and compositions for resistors required to be temperature-dependent and the Specification in connection with the latter mentions applications as overload and temperature control devices and current stabilizers. The Specification includes tables of example compositions (not shown) and characteristic curves (not shown) illustrating with reference to selected examples the corresponding positive or negative or zero resistance/temperature coefficient which obtains for the temperature range involved.ALSO:A method of manufacturing sintered semi-conductive material having a resistivity of less than 106 ohm/cm is characterised in that to a mass primarily comprising barium titanate or to a mixture of substances capable of producing such a mass upon heating is added per mol. of barium titanate in a total quantity of not more than 1.5 atomic per cent. at least one of the elements yttrium and bismuth and/or in a total quantity of not more than 0.8 atomic per cent. at least one of the rare earth metals, antimony and tungsten, preferably in the form of a compound, the sintering being carried out, after moulding, at a temperature between 1050 DEG C. and 1500 DEG C., preferably between 1300 DEG C. and 1400 DEG C. in an atmosphere of which the partial oxygen pressure at the sintering temperature is at least 0.05 mm. The barium titanate may be produced by sintering barium oxide and titanium dioxide; preferably there is an excess of up to 20 molecular per cent. of titanium dioxide. The barium may be partly replaced by strontium, calcium or lead, and the titanium by silicon, germanium, zironium or tin
GB12720/52A 1951-05-23 1952-05-20 Improvements in or relating to semi-conductive material Expired GB714965A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL319001X 1951-05-23

Publications (1)

Publication Number Publication Date
GB714965A true GB714965A (en) 1954-09-08

Family

ID=19783910

Family Applications (1)

Application Number Title Priority Date Filing Date
GB12720/52A Expired GB714965A (en) 1951-05-23 1952-05-20 Improvements in or relating to semi-conductive material

Country Status (6)

Country Link
BE (1) BE511613A (en)
CH (1) CH319001A (en)
DE (1) DE929350C (en)
FR (1) FR1066126A (en)
GB (1) GB714965A (en)
NL (1) NL84015C (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2976505A (en) * 1958-02-24 1961-03-21 Westinghouse Electric Corp Thermistors
US2981699A (en) * 1959-12-28 1961-04-25 Westinghouse Electric Corp Positive temperature coefficient thermistor materials
US3044968A (en) * 1958-05-13 1962-07-17 Westinghouse Electric Corp Positive temperature coefficient thermistor materials
US3116262A (en) * 1961-05-19 1963-12-31 Gen Electric Ceramic composition
DE1182131B (en) * 1962-05-09 1964-11-19 Matsushita Electric Ind Co Ltd Ferroelectric ceramic semiconductor
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
US3231522A (en) * 1963-09-26 1966-01-25 American Radiator & Standard Thermistor
US3277020A (en) * 1963-12-19 1966-10-04 Int Resistance Co Glass composition and electrical resistance material made therefrom
US3292062A (en) * 1964-06-01 1966-12-13 Bell Telephone Labor Inc Method for preparing stabilized barium titanate, and capacitor
US3299332A (en) * 1961-07-10 1967-01-17 Murata Manufacturing Co Semiconductive capacitor and the method of manufacturing the same
US3351568A (en) * 1964-04-13 1967-11-07 Texas Instruments Inc Production of solid state ptc sensors
US3359133A (en) * 1964-04-06 1967-12-19 American Lava Corp Ceramic dielectrics
US3373120A (en) * 1965-12-02 1968-03-12 Matsushita Electric Ind Co Ltd Semiconductive ceramic compositions with positive temperature coefficient of resistance
US3426250A (en) * 1966-08-01 1969-02-04 Sprague Electric Co Controlled reduction and reoxidation of batio3 capacitors and resulting capacitor
US3458363A (en) * 1962-09-11 1969-07-29 Teledyne Inc Thermoelectric device comprising an oxide base thermoelectric element
US3637532A (en) * 1964-09-17 1972-01-25 Siemens Ag Sintered cold-conductor resistor body and method for its production
DE2349485A1 (en) * 1972-10-10 1974-04-25 Texas Instruments Inc HEATING DEVICE
JPS50124190A (en) * 1974-03-20 1975-09-30
JPS5138090A (en) * 1974-09-25 1976-03-30 Murata Manufacturing Co
JPS5220291A (en) * 1975-08-08 1977-02-16 Tdk Corp Semiconductor porcelain composition
US4245146A (en) * 1977-03-07 1981-01-13 Tdk Electronics Company Limited Heating element made of PTC ceramic material
EP2067755A4 (en) * 2006-09-28 2016-02-10 Murata Manufacturing Co Barium titanate semiconductor porcelain composition and ptc device utilizing the same
US9363851B2 (en) 2008-08-07 2016-06-07 Epcos Ag Heating device and method for manufacturing the heating device

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1147699B (en) * 1955-06-15 1963-04-25 Dr Carl Schusterius Heating element for heat devices
DE1140628B (en) * 1957-07-15 1962-12-06 Siemens Ag Semiconductor resistor with a positive temperature coefficient and method for its manufacture
DE1415406B1 (en) * 1958-04-30 1970-08-20 Siemens Ag Ceramic resistor with a high positive temperature coefficient of its total resistance value
DE1286242B (en) * 1958-07-22 1969-01-02 Siemens Ag Electrically heated device that is provided with an electrical resistance element with a positive temperature coefficient for automatic temperature control
GB884943A (en) * 1959-04-24 1961-12-20 Standard Telephones Cables Ltd Electrical circuit elements
DE1239416B (en) * 1960-04-26 1967-04-27 Siemens Electrogeraete Ges Mit Electric instantaneous water heater with ceramic heating resistor
DE1149648B (en) * 1961-06-16 1963-05-30 Bosch Gmbh Robert Pulse generator for electrical signal systems, such as flashing light systems, in particular for indicating the direction of travel of motor vehicles
DE1288686B (en) * 1964-01-31 1969-02-06 Int Standard Electric Corp Method for creating a ceramic capacitor
US3444101A (en) * 1964-08-19 1969-05-13 Telefunken Patent Barium titanate compositions containing cerium and bismuth
CH581377A5 (en) * 1975-02-11 1976-10-29 Bbc Brown Boveri & Cie
DE3917570A1 (en) * 1989-05-30 1990-12-06 Siemens Ag Electrical ceramic component esp. cold conductor - has over-doped surface giving increased breakdown resistance
US5837164A (en) * 1996-10-08 1998-11-17 Therm-O-Disc, Incorporated High temperature PTC device comprising a conductive polymer composition
US5985182A (en) * 1996-10-08 1999-11-16 Therm-O-Disc, Incorporated High temperature PTC device and conductive polymer composition
US6074576A (en) * 1998-03-24 2000-06-13 Therm-O-Disc, Incorporated Conductive polymer materials for high voltage PTC devices
DE102008036836A1 (en) 2008-08-07 2010-02-11 Epcos Ag Shaped body, heating device and method for producing a shaped body

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB579868A (en) * 1944-03-15 1946-08-19 Taylor Tunnicliff And Company An improved dielectric composition
GB625516A (en) * 1947-08-06 1949-06-29 Jack Woodcock Improvements in or relating to ceramic dielectrics comprising essentially titania

Cited By (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2976505A (en) * 1958-02-24 1961-03-21 Westinghouse Electric Corp Thermistors
US3044968A (en) * 1958-05-13 1962-07-17 Westinghouse Electric Corp Positive temperature coefficient thermistor materials
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
US2981699A (en) * 1959-12-28 1961-04-25 Westinghouse Electric Corp Positive temperature coefficient thermistor materials
US3116262A (en) * 1961-05-19 1963-12-31 Gen Electric Ceramic composition
US3299332A (en) * 1961-07-10 1967-01-17 Murata Manufacturing Co Semiconductive capacitor and the method of manufacturing the same
DE1182131B (en) * 1962-05-09 1964-11-19 Matsushita Electric Ind Co Ltd Ferroelectric ceramic semiconductor
US3458363A (en) * 1962-09-11 1969-07-29 Teledyne Inc Thermoelectric device comprising an oxide base thermoelectric element
US3231522A (en) * 1963-09-26 1966-01-25 American Radiator & Standard Thermistor
US3277020A (en) * 1963-12-19 1966-10-04 Int Resistance Co Glass composition and electrical resistance material made therefrom
US3359133A (en) * 1964-04-06 1967-12-19 American Lava Corp Ceramic dielectrics
US3351568A (en) * 1964-04-13 1967-11-07 Texas Instruments Inc Production of solid state ptc sensors
US3292062A (en) * 1964-06-01 1966-12-13 Bell Telephone Labor Inc Method for preparing stabilized barium titanate, and capacitor
US3637532A (en) * 1964-09-17 1972-01-25 Siemens Ag Sintered cold-conductor resistor body and method for its production
US3373120A (en) * 1965-12-02 1968-03-12 Matsushita Electric Ind Co Ltd Semiconductive ceramic compositions with positive temperature coefficient of resistance
US3426250A (en) * 1966-08-01 1969-02-04 Sprague Electric Co Controlled reduction and reoxidation of batio3 capacitors and resulting capacitor
DE2349485A1 (en) * 1972-10-10 1974-04-25 Texas Instruments Inc HEATING DEVICE
JPS50124190A (en) * 1974-03-20 1975-09-30
JPS5410110B2 (en) * 1974-03-20 1979-05-01
JPS5138090A (en) * 1974-09-25 1976-03-30 Murata Manufacturing Co
JPS551684B2 (en) * 1974-09-25 1980-01-16
JPS5220291A (en) * 1975-08-08 1977-02-16 Tdk Corp Semiconductor porcelain composition
JPS5329386B2 (en) * 1975-08-08 1978-08-21
US4245146A (en) * 1977-03-07 1981-01-13 Tdk Electronics Company Limited Heating element made of PTC ceramic material
EP2067755A4 (en) * 2006-09-28 2016-02-10 Murata Manufacturing Co Barium titanate semiconductor porcelain composition and ptc device utilizing the same
US9363851B2 (en) 2008-08-07 2016-06-07 Epcos Ag Heating device and method for manufacturing the heating device

Also Published As

Publication number Publication date
BE511613A (en)
CH319001A (en) 1957-01-31
FR1066126A (en) 1954-06-02
DE929350C (en) 1955-06-23
NL84015C (en)

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