JPS58122703A - Method of producing voltage nonlinear resistor - Google Patents

Method of producing voltage nonlinear resistor

Info

Publication number
JPS58122703A
JPS58122703A JP57003365A JP336582A JPS58122703A JP S58122703 A JPS58122703 A JP S58122703A JP 57003365 A JP57003365 A JP 57003365A JP 336582 A JP336582 A JP 336582A JP S58122703 A JPS58122703 A JP S58122703A
Authority
JP
Japan
Prior art keywords
nonlinear resistor
voltage nonlinear
producing voltage
current range
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57003365A
Other languages
Japanese (ja)
Inventor
丹野 善一
成田 広好
大熊 英夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP57003365A priority Critical patent/JPS58122703A/en
Publication of JPS58122703A publication Critical patent/JPS58122703A/en
Pending legal-status Critical Current

Links

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 発明の技術分野 本発明は電圧非直線抵抗体の製造方法に関する。[Detailed description of the invention] Technical field of invention The present invention relates to a method of manufacturing a voltage nonlinear resistor.

発明の技術的背景とその問題点 従来の電圧非直線抵抗体の製造方法は主成分であるZn
Oに、副成分として”ff0j 18bIOm m c
o、o、 1Mn0.A40gなどの金属酸化物を少量
添加し、これを温合、成形した後1100〜1300℃
の温度で焼結させるものであった。この様にして得られ
た電圧非直線抵抗体は非直線特性に優れ、サージ吸収用
素子として種々の電力用機器に使用されている。
Technical background of the invention and its problems The conventional method for manufacturing voltage nonlinear resistors uses Zn, which is the main component.
O, as a subcomponent “ff0j 18bIOm m c
o, o, 1Mn0. After adding a small amount of metal oxide such as A40g, heating and molding, the temperature is 1100-1300℃.
It was to be sintered at a temperature of . The voltage nonlinear resistor thus obtained has excellent nonlinear characteristics and is used as a surge absorbing element in various power equipment.

しかし電力用避雷器の内部要素用素子として用いる場合
には次の様な欠点があった。
However, when used as an internal element of a power surge arrester, there are the following drawbacks.

衝撃電流を印加した場合、七〇@性変化が大きい・又、
大電流域の非直線特性も十分なものとはいえず、かつ製
造ロットによ)小電流域の特性についてもバラツキが大
きい。
When an impact current is applied, there is a large change in
The nonlinear characteristics in the large current range are also not satisfactory, and the characteristics in the small current range also vary widely (depending on the manufacturing lot).

ところで、従来大電流域の非直線性の改善は、ZnO結
晶中に微量のA!イオン、Gmイオン、Inイオン等を
焼結中に拡散させ、Zn0O比抵抗を下げるいわゆる原
子価制御法が知られている。ところでAJ、Gajn等
は数〜数百PPMの微量でその特性に影響を与える。し
かしながら、主成分のZnOや副成分とともに単に混合
成形して焼結する従来の方法ではこれら超微量のAJ、
Ga、In成分が十分にZnO結晶中へ均一に分散され
ず大部分はスピネル結晶および粒界相へ取シ込まれてし
まっていた。このことが小電流域特性および衝撃電流一
対する特性の安定化を十分はかることができない原因と
なっていたと考えられる。また混合条件のわずかの変化
でもAj、Ga、In成分のZnO結晶中への拡散状態
が変動し、このことが、又ロット間特性のバラツキの原
因となっていたと考えられるO 発明の目的 本発明は上記欠点に鑑みなされたもので優れた大電流域
特性、衝撃電流特性を有し、又、小電流域特性のバッフ
dPも小さい電圧非直線抵抗体の製造方法を提供するこ
とを目的とする。
By the way, the conventional improvement in nonlinearity in the large current range is due to a trace amount of A! in the ZnO crystal. A so-called valence control method is known in which ions, Gm ions, In ions, etc. are diffused during sintering to lower the Zn0O resistivity. By the way, AJ, Gajn, etc. affect the characteristics at minute amounts of several to several hundred ppm. However, in the conventional method of simply mixing and molding together with the main component ZnO and subcomponents and sintering, these ultra-trace amounts of AJ,
Ga and In components were not sufficiently and uniformly dispersed in the ZnO crystal, and most of them were incorporated into the spinel crystal and grain boundary phase. This is considered to be the reason why it was not possible to sufficiently stabilize the characteristics in the small current range and the characteristics with respect to the impulse current. In addition, even slight changes in the mixing conditions can cause changes in the diffusion state of the Aj, Ga, and In components into the ZnO crystal, which is thought to be the cause of variations in properties between lots. was developed in view of the above drawbacks, and aims to provide a method for manufacturing a voltage nonlinear resistor that has excellent large current range characteristics and shock current characteristics, and also has a small buffer dP in small current range characteristics. .

発明の概要 本発明は、たとえばAj、Oaと主成分のZnOのみを
あらかじめ混合し、この温金物を仮焼することによって
、 ZnO結晶中へあらかじめAI酸成分拡散が均一に
行われる状態を作り、その後にこの仮焼物にその他の副
成分(B i、01 、8blO1、Co−易、 Mn
Oなどを)を添加温合し、この混合物を成形した稜に焼
成することをその特徴とする。
Summary of the Invention The present invention creates a state in which the AI acid component is uniformly diffused into the ZnO crystal by pre-mixing only Aj, Oa and the main component ZnO, and calcining the hot metal. After that, other subcomponents (B i, 01, 8blO1, Co-yield, Mn
It is characterized by adding and heating the mixture (O, etc.) and firing the mixture into a shaped ridge.

発明の実施例 以下本発明を実施例にもとすき説明する@まず主成分Z
nOと副成分の一つであるム4osの全量を秤量し、こ
れに水を加えてポットミルで1合、乾燥後950℃で仮
焼する。これをボットミルで粉砕後、その他の副成分と
してBt、ol、 8b雪OH、Co−鄭、 MnOな
どを添加混合し、この混合物を成形した後電気炉に入れ
1250℃で2Hr焼成し、冷却後研磨を行い45φX
22tmの焼結体を得た。研磨面KAAj射を行い電極
付を行った。この様にして得られた電圧非直線抵抗体の
大電流領域における非直線性は素子にl0KAの電流を
流した時の電圧(VioxA)と素子に1mAの電流を
流した時の電圧(V1waム)の比(V l0KA//
v1 mム)で表わした。又衝撃電流特性は8X20μ
5lQKAを30秒間隔で10回印加した後のvl−ム
 の変化率で表わした。第1!IK本発明の実施例と従
来例を各々lOロットサンプリングして比較した。
EXAMPLES OF THE INVENTION The present invention will be explained below using examples.@First, the main component Z
The total amount of nO and Mu4os, which is one of the subcomponents, is weighed, water is added thereto, one cup is mixed in a pot mill, and after drying, it is calcined at 950°C. After pulverizing this in a bot mill, other subcomponents such as Bt, OL, 8B snow OH, Co-Zheng, MnO, etc. were added and mixed, this mixture was molded, placed in an electric furnace, fired at 1250℃ for 2 hours, and after cooling. Polished to 45φX
A sintered body of 22 tm was obtained. The polished surface was subjected to KAAj irradiation to attach electrodes. The nonlinearity in the large current region of the voltage nonlinear resistor obtained in this way is the voltage when a current of 10 KA is passed through the element (VioxA) and the voltage when a current of 1 mA is passed through the element (V1wa). ) ratio (V l0KA//
v1 mm). Also, the impact current characteristics are 8x20μ
It was expressed as the rate of change in vl-me after applying 5lQKA 10 times at 30 second intervals. 1st! IK The embodiment of the present invention and the conventional example were each sampled from 10 lots and compared.

(以トz゛、自) 第1表 又図面に、本発明例と従来例の小電流域特性を示す(V
1艷μ0.1艷)の値を10ロツト比較しそのノ(ラツ
キの状態を示した。第1表および図面から明白[K、大
IE 流域特性(VIOKA/Vl m )、衝撃電流
特性(Δv1艷%)および小電流域特性(Vt艷/覧1
−)のいずれもが改善され、しかも各ロット間ノ(チッ
キも小さく七の特性が著しく安定化されている。
Table 1 and the drawings show the small current range characteristics of the present invention example and the conventional example (V
It is clear from Table 1 and the drawings [K, large IE watershed characteristics (VIOKA/Vl m), impulse current characteristics (Δv1 %) and small current range characteristics (Vt %/Ran 1
-) have been improved, and the characteristics of 7 have been significantly stabilized with less chitness between each lot.

これら特性の改善および安定性が増した要因としては、
ムl、0.をあらかじめZnOと温合仮焼することによ
シ、ZnO結晶中へAj酸成分拡散が十分均一に行われ
た為であると考えられる。
The factors contributing to these improvements in properties and increased stability include:
Mul, 0. This is thought to be because the Aj acid component was sufficiently uniformly diffused into the ZnO crystal by preheating and calcining it with ZnO.

発明の他の実施例 冑、Aj、0.にかえてGa、0. 、 Into、で
も同様の結果が得られた。
Other embodiments of the invention Aj, 0. Instead, Ga, 0. , Into, similar results were obtained.

発明の詳細 な説明した様に、本発明によれば大電流域特性、衝撃電
流特性、小電流域特性が改善され、且つ各製造關ットの
特性変動(バラツキ)も小さい電圧非直線抵抗体を提供
することができる。
As described in detail, the present invention provides a voltage nonlinear resistor that has improved large current range characteristics, shock current characteristics, and small current range characteristics, and has small characteristic fluctuations between manufacturing units. can be provided.

【図面の簡単な説明】[Brief explanation of the drawing]

図面は、従来例と本発明に係る製造ロットの小電流域特
性のバラツキを示す比較特性図である。
The drawing is a comparative characteristic diagram showing variations in small current region characteristics between manufacturing lots according to the conventional example and the present invention.

Claims (1)

【特許請求の範囲】 主成分のZnOK % kl嘗Os 、 Gas’s 
+ ”MOSの少くとも一種類を添加1合し、この混合
物を仮焼した後、この仮焼物に副成分としてB1101
 、8blO1、co、o、 。 MnOなどの金属酸化物を添加混合し、この混合物を成
形した後焼結させる電圧非直線抵抗体の製造方法。
[Claims] Main component ZnOK% kl嘗Os, Gas's
+ "At least one type of MOS is added and this mixture is calcined, and B1101 is added as a subcomponent to this calcined product.
,8blO1,co,o,. A method for manufacturing a voltage nonlinear resistor, which involves adding and mixing a metal oxide such as MnO, shaping the mixture, and then sintering it.
JP57003365A 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor Pending JPS58122703A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57003365A JPS58122703A (en) 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57003365A JPS58122703A (en) 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor

Publications (1)

Publication Number Publication Date
JPS58122703A true JPS58122703A (en) 1983-07-21

Family

ID=11555314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57003365A Pending JPS58122703A (en) 1982-01-14 1982-01-14 Method of producing voltage nonlinear resistor

Country Status (1)

Country Link
JP (1) JPS58122703A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0212901A (en) * 1988-06-30 1990-01-17 Matsushita Electric Ind Co Ltd Manufacture of zinc oxide varistor
JPH02135704A (en) * 1988-11-16 1990-05-24 Murata Mfg Co Ltd Manufacture of varistor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0212901A (en) * 1988-06-30 1990-01-17 Matsushita Electric Ind Co Ltd Manufacture of zinc oxide varistor
JPH02135704A (en) * 1988-11-16 1990-05-24 Murata Mfg Co Ltd Manufacture of varistor

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