JPS62232904A - Manufacture of varistor - Google Patents
Manufacture of varistorInfo
- Publication number
- JPS62232904A JPS62232904A JP61077137A JP7713786A JPS62232904A JP S62232904 A JPS62232904 A JP S62232904A JP 61077137 A JP61077137 A JP 61077137A JP 7713786 A JP7713786 A JP 7713786A JP S62232904 A JPS62232904 A JP S62232904A
- Authority
- JP
- Japan
- Prior art keywords
- grain growth
- varistor
- growth promoter
- zno
- mol
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 70
- 239000011787 zinc oxide Substances 0.000 claims description 35
- 239000007952 growth promoter Substances 0.000 claims description 32
- 239000000843 powder Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims 1
- 230000007423 decrease Effects 0.000 description 12
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 10
- 239000002245 particle Substances 0.000 description 9
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- -1 Coo Substances 0.000 description 5
- 229910052596 spinel Inorganic materials 0.000 description 5
- 239000011029 spinel Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000007921 spray Substances 0.000 description 3
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- QDOXWKRWXJOMAK-UHFFFAOYSA-N dichromium trioxide Chemical compound O=[Cr]O[Cr]=O QDOXWKRWXJOMAK-UHFFFAOYSA-N 0.000 description 2
- 239000002362 mulch Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 229910002637 Pr6O11 Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(II) oxide Inorganic materials [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N nickel(II) oxide Inorganic materials [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
【発明の詳細な説明】
産業上の利用分野
本発明は半導体電子部品をサージ電流から保護するため
の低電圧用のバリスタの製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method for manufacturing a low voltage varistor for protecting semiconductor electronic components from surge currents.
従来の技術
従来、ＺｎＯを主成分とし、Ｂｉ２Ｏ３、Ｃｏｏ 、
５ｂ２０３゜Ｃｒ２Ｏ３を始めとする数種の金属酸化物
を副成分とする酸化亜鉛型バリスタが、優れた電圧非直
線性により、サージ吸収用の素子として広く利用されて
きた。この酸化亜鉛型バリスタは焼結体１ｍｍ当たりの
立上がり電圧（バリスタ電圧：ｖ１ｍム）を調整するこ
とにより、種々の電圧回路に適用できる。Conventional technology Conventionally, the main component is ZnO, Bi2O3, Coo,
Zinc oxide type varistors containing several types of metal oxides including 5b203°Cr2O3 as subcomponents have been widely used as surge absorbing elements due to their excellent voltage nonlinearity. This zinc oxide type varistor can be applied to various voltage circuits by adjusting the rising voltage per 1 mm of the sintered body (varistor voltage: v1 mm).
現在、実用化されている酸化亜鉛型バリスタのｖ１ｍム
／ｍｍは概ね１０〜３００ｖである。まだ酸化亜鉛型バ
リスタのバリスタ電圧は、焼結体中のＺｎＯ粒子の直列
数に依存し、焼結体の厚みを一定とすると、バリスタ電
圧を上げるためにはＺｎＯ粒子の成長を阻害し、逆に下
げるためには促進させれば良い。例えば、ＺｎＯ、Ｂｉ
２Ｏ５、Ｃｏｏ 、 Ｓｂ２０３ 。The v1mm/mm of zinc oxide type varistors currently in practical use is approximately 10 to 300V. However, the varistor voltage of a zinc oxide type varistor depends on the number of series ZnO particles in the sintered body, and if the thickness of the sintered body is constant, in order to increase the varistor voltage, the growth of ZnO particles must be inhibited, and vice versa. In order to lower it, we need to promote it. For example, ZnO, Bi
2O5, Coo, Sb203.
５ｉ０２ 、ＮｉＯ、Ｃｒ２Ｏ５、ＭｎＯ２などから適
当に調製された酸化亜鉛型バリスタでは、ＺｎＯ粒子の
大きさは１０〜３０μｍ程度、ｖ１ｍム／ｍｍは８ｏ〜
３００ｖである。一方、これらの成分にＴｌＯ２を加え
た酸化亜鉛型バリスタは低電圧化し、ＺｎＯ粒子径は５
０〜１００μｍ、Ｖ１ｍム／ｍｍは２ｏ〜５０Ｖとなる
。In a zinc oxide type varistor suitably prepared from 5i02, NiO, Cr2O5, MnO2, etc., the size of the ZnO particles is about 10 to 30 μm, and the v1mm/mm is about 8o to
It is 300v. On the other hand, a zinc oxide type varistor with TlO2 added to these components has a lower voltage and a ZnO particle size of 5.
0 to 100 μm, V1mm/mm is 2o to 50V.
近年、家電機器、産業機器の制御回路のマイコン化が進
展し、これに伴い駆動回路電圧が低下し、そのほとんど
が１０ｖ以下である。ところが、トランジスタＩＣを始
めとする半導体電子部品はサージ電流に極めて弱く、そ
の対策が不可欠のものとなっている。このような背景に
より、バリスタ電圧が１０Ｖ程度の低電圧回路用の酸化
亜鉛型バリスタが市場から強く求められている。このた
めにはＺｎＯ粒子径を２００〜３００μｍにする必要が
ある１−１
上記低電圧回路用の酸化亜鉛型バリスタを製造する方法
として、例えば特公昭５６−３９５２５号公報に記載の
ものが知られている。これは、ＺｎＯ９９，５−Ｅ−／
Ｌ、％、 ＢａＣＯ３０，６モル％を混合したのち熔結
し、加水分解により３０〜２００μｍのＺｎＯ結晶を得
る。さらに、ＺｎＯ、５ｂ２０５ 、 Ｃｏｏ 。In recent years, the use of microcomputers in the control circuits of home appliances and industrial equipment has progressed, and as a result, drive circuit voltages have decreased, and most of them are below 10V. However, semiconductor electronic components such as transistor ICs are extremely susceptible to surge currents, and countermeasures against surge currents are essential. Against this background, there is a strong demand in the market for zinc oxide type varistors for low voltage circuits with a varistor voltage of about 10V. For this purpose, it is necessary to make the ZnO particle size 200 to 300 μm.1-1 As a method for manufacturing the zinc oxide type varistor for the above-mentioned low voltage circuit, for example, the method described in Japanese Patent Publication No. 39525/1982 is known. ing. This is ZnO99,5-E-/
After mixing 0.6 mol% of BaCO3, the mixture is welded and hydrolyzed to obtain ZnO crystals of 30 to 200 μm. Furthermore, ZnO, 5b205, Coo.
ＭｎＯ２、Ｎｉ Ｏ、Ｏｒ、＋ ０５などを混合したの
ち燐結し、スピネル相成分を得る。このスピネル相成分
とＺｎＯ結晶を適当に分級し、別に用意したＺｎＯ粉末
にスピネル相成分を１〜５０重量％ 、 ＺｎＯ結晶を
１〜４０重景多添加し、混合、成型、燐結し、ｖ１ｍム
／ｍｍが約１０Ｖの低電圧バリスタが作成される。After mixing MnO2, NiO, Or, +05, etc., phosphorization is performed to obtain a spinel phase component. The spinel phase component and ZnO crystals were appropriately classified, and 1 to 50% by weight of the spinel phase component and 1 to 40 ZnO crystals were added to separately prepared ZnO powder, mixed, molded, and phosphorized to form a v1 m A low voltage varistor with a voltage of about 10 V/mm is created.
発明が解決しようとする問題点
しかしながら、上記のような従来の方法によれば、Ｚｎ
Ｏ結晶粒を得るために焼成後、加水分解、分級が必要で
あり、さらにスピネル相成分の作成にも同様の工程が必
要なため、工数が非常に多く、時間的、エネルギー的ロ
スが高いという欠点を有していた。さらに、ＺｎＯ結晶
粒とスピネル相成分、ＺｎＯ粉末を混合する際、それら
の比重の違いから均一な混合が困難で、ＺｎＯ結晶粒の
偏在によりバリスタ電圧が大きく、バラツキが大きいと
いう欠点も同時に有していた。Problems to be Solved by the Invention However, according to the conventional method as described above, Zn
Hydrolysis and classification are required after firing to obtain O crystal grains, and a similar process is also required to create the spinel phase component, resulting in a very large number of man-hours and a high loss of time and energy. It had drawbacks. Furthermore, when mixing ZnO crystal grains, spinel phase components, and ZnO powder, it is difficult to mix uniformly due to the difference in their specific gravity, and the uneven distribution of ZnO crystal grains also has the disadvantage that the varistor voltage is large and has large variations. was.
本発明はこのような問題点を解決するもので、半導体電
子部品をサージ電流から保護するだめの低電圧用のバリ
スタの製造方法を提供することを目的とするものである
。The present invention solves these problems and aims to provide a method for manufacturing a low-voltage varistor that protects semiconductor electronic components from surge currents.
問題点を解決するだめの手段
本発明では、上記従来の問題点を解決するため、酸化亜
鉛型バリスタの造粒粉を基材とし、これに別途用意した
人ｒｈｏｓ ＊ Ｔｊ−０２などを含む酸化亜鉛バリス
タの造粒粉を粒成長促進剤として添加し、混合、成型、
焼結させることを特徴とするものである。Means to Solve the Problems In the present invention, in order to solve the above-mentioned conventional problems, a granulated powder of a zinc oxide type varistor is used as a base material, and an oxidized powder containing separately prepared rhos*Tj-02, etc. is used as a base material. Zinc varistor granulated powder is added as a grain growth promoter, mixed, molded,
It is characterized by being sintered.
作用
上記方法を採用することにより、焼結体内部に８０〜３
００μｍのＺｎＯ結晶粒が分散して配置され、電圧非直
線指数の優れた低電圧のバリスタを容易に得ることとな
る。Effect By adopting the above method, 80 to 3
00 μm ZnO crystal grains are dispersed and arranged, and a low voltage varistor with an excellent voltage nonlinearity index can be easily obtained.
実施例 以下、本発明の詳細を実施例に基づき説明する。Example Hereinafter, details of the present invention will be explained based on examples.
〈実施例１〉
まず、ＺｎＯ粉末にＢｉ２Ｏ３、Ｃｏｏ 、 ＭｎＯ２
、５ｂ２０５ 。<Example 1> First, Bi2O3, Coo, MnO2 was added to ZnO powder.
, 5b205.
ＮｉＯ、Ｃｒ２Ｏ５、ＴｉＯ２をそれぞれ１．０モル％
、０．４モル％、１．○モル％、０９ＯＳモル％、０
．８モルチ添加し、これにバインダーと水を加え混合す
る。これをスプレードライヤーにて乾燥造粒し基材を得
る。次に、粒成長促進剤として、前述の基材のス５１Ｊ
−に１７！２０ｓを０，６ Ｘ １０ モ／し％ 、
１，０Ｘ１０−５モル％ 、 １．５ Ｘ １０ モル
％ 、 ２，５Ｘ１０ モに％ 。1.0 mol% each of NiO, Cr2O5, and TiO2
, 0.4 mol%, 1. ○mol%, 09OSmol%, 0
．． Add 8 mulch, add binder and water and mix. This is dried and granulated using a spray dryer to obtain a base material. Next, as a grain growth promoter, the above-mentioned base material 51J
- 17!20s to 0.6 x 10 mo/%,
1,0 x 10-5 mol%, 1.5 x 10 mol%, 2,5 x 10 mol%.
ｓ、ｏ ｘ １ｏ モルチオ了、５Ｘ１０ モルチを
添加し充分に混合し、スプレードライヤーにて乾燥、造
粒し、６種類の粉末を得る。この造粒粉を粒径２０μｍ
〜１ｏＯμｍになるようメツシュカットを行い、粒成長
促進剤として用いた。この粒成長促進剤を基材に対し適
尚量混合し、低電圧バリスタの原料粉とした。この原料
粉を加圧成型後、１２５０℃で１〜６時間燐結させ、バ
リスタ電圧、電圧非直線指数などを調べた。s, ox 1o molti, and 5X10 molti were added, thoroughly mixed, dried with a spray dryer, and granulated to obtain six types of powder. This granulated powder has a particle size of 20 μm.
Mesh cutting was performed to obtain a particle size of ~100 μm and used as a grain growth promoter. An appropriate amount of this grain growth promoter was mixed with a base material to obtain a raw material powder for a low voltage varistor. After pressure molding this raw material powder, it was phosphorized at 1250°C for 1 to 6 hours, and the varistor voltage, voltage nonlinearity index, etc. were examined.
第１図は基材に粒成長促進剤を４ｏ重量係添加した試料
の単位素子淳み当たりのバリスタ電圧（Ｖ＋ｍム／ｍｍ
）および電圧非直線指数（α）と、粒成長促進剤中のＡ
ｅ２０ｓ ８度との関係を示しだ図である。また、第２
図は粒成長促進剤のみを焼結させた試料について、同様
にｖｉ ｍ Ａ ７ｍｍおよびαと、Ａｇ２０ｓ濃度と
の関係である。第１図から、粒成長促進剤中の人１２０
５ｅＡ度が１，０Ｘ１０ モルチ以下の時Ｖ ＋ ｍＡ
７ｍｍ は２Ｑ〜３ｏｖ、αは約４５．ｊ５〜ＩｊＯ
Ｘ １０モルチの範囲で７１＝ム／ｍｍは目標とする１
６〜９Ｖ、αは約４０．λｅ２０ｓ濃度がＦ５．ＯＸ
１０ モル係を越えると７１ｍ１７ｍｍおよびαの低
下が急激に起きる。第２図は粒成長促進剤のみを炉結し
た場合のデータである。第２図からＡｒｈｏｓ 濃度と
ともにｖＩｍａ／ｍｍが低下し、ＺｎＯ粒成長が発生し
ていることがわかる。このことからＺｎＯ粒成長の主原
因がＡｌ２Ｏ５にあると推測できる。Figure 1 shows the varistor voltage (V + mm/mm
) and the voltage nonlinearity index (α) and A in the grain growth promoter
It is a diagram showing the relationship with e20s 8 degrees. Also, the second
The figure similarly shows the relationship between vi m A 7 mm and α and the Ag20s concentration for a sample in which only the grain growth promoter was sintered. From Figure 1, 120 people in the grain growth promoter
V + mA when 5eA degree is less than 1.0x10 molti
7mm is 2Q~3ov, α is about 45. j5～IjO
71=mu/mm in the range of X 10 molts is the target 1
6-9V, α is about 40. λe20s concentration is F5. OX
When the value exceeds 10 molar ratio, the value of 71 mm and 17 mm and α rapidly decrease. FIG. 2 shows data when only the grain growth promoter was furnace solidified. From FIG. 2, it can be seen that vIma/mm decreases with the Arhos concentration, and ZnO grain growth occurs. From this, it can be inferred that the main cause of ZnO grain growth is Al2O5.
しかし、ム１２０５濃度を上げることのみでｖ１１ｘＩ
Ａ／ｆｆ１ｍを下げると、第２図からバリスタとしての
非常に重要な特性である電圧非直線指数（α）が極端に
低下することがわかる。However, by simply increasing the mu1205 concentration, v11xI
It can be seen from FIG. 2 that when A/ff1m is lowered, the voltage nonlinearity index (α), which is a very important characteristic of a varistor, is extremely reduced.
第３図および第４図は基材に添加する粒成長促進剤の種
類および量を変化させた場合の”１ｍｍムロｍ。Figures 3 and 4 show "1 mm thickness" when the type and amount of the grain growth promoter added to the base material are varied.
αを示したものである。第３図、第４図で粒成長促進剤
中の人４２０５濃度は曲線ａが１，０Ｘ１０モル％、ｂ
が２．５ Ｘ １０ モに％ 、 Ｃｊが７．５ Ｘ
１０ モル係である。そして、ム１ｈｏｓｔ４度が１．
０Ｘ１０モルチの場合、基材に対する粒成長促進剤の割
合が増加しても７１ｍ１７ｍｍ 、αはともにほとんど
変化しない。一方、ム１２０３濃度が２，５ Ｘ １０
モル係の場合、粒成長促進剤の添加量が２５〜８０重
量％の時、Ｖ ＩＩＩＩＡ ７ｍｍは１０〜１５ｖ１α
は３５〜４ｏと低電圧バリスタとして最適の特性を持つ
。しかし、添加量が８０重量％を超えるとαが急激に低
下し、バリスタとして使用できなくなる。図示していな
いがＡ１２０５ｅ度が５．ＯＸ １０ モル係の粒成
長促進剤を用いた場合にも同様の結果が得られた。また
、１２０ｓ濃度が乙５Ｘ１０ モル係の場合、粒成長
促進剤の添加量が１０〜４０重量係の時、ｖ、ｍム／ｍ
ｍは約６ｖに低下するものの、αが非常に悪くなる。This shows α. In Figures 3 and 4, the concentration of human 4205 in the grain growth promoter is 1.0 x 10 mol% for curve a and 1.0 x 10 mol% for curve b.
is 2.5 x 10%, Cj is 7.5 x
10 moles. And MU1host4 degrees is 1.
In the case of 0x10 molti, both 71m17mm and α hardly change even if the ratio of the grain growth promoter to the base material increases. On the other hand, the concentration of mu1203 is 2.5 x 10
In the case of molar ratio, when the amount of grain growth promoter added is 25 to 80% by weight, VIIIA 7mm is 10 to 15v1α
has the optimum characteristics as a low voltage varistor, with a value of 35 to 4o. However, when the amount added exceeds 80% by weight, α sharply decreases, making it impossible to use it as a varistor. Although not shown, A1205e degree is 5. Similar results were obtained using OX 10 molar grain growth promoter. In addition, when the 120s concentration is 5 x 10 molar, and the amount of grain growth promoter added is 10 to 40 molar, v, mm/m
Although m decreases to about 6V, α becomes very poor.
さらに、添加量が６０重量％を超えるとＺｎＯ粒子が異
常粒成長をし、すべての試料がショートする０以上の結
果から粒成長促進剤中の人７！２０ｓが１．５〜５、Ｏ
Ｘ １０ モル係で、基材に対する添加量が２５〜８
０重量％の時、Ｖｊｍム／ｍｒｏ １０〜１６ｖ、α約
４０の低電圧バリスタを製造することができる。Furthermore, when the amount added exceeds 60% by weight, ZnO particles grow abnormally, and all samples are short-circuited.
X 10 molar ratio, the amount added to the base material is 25 to 8
When it is 0% by weight, a low voltage varistor with Vjm/mro of 10 to 16v and α of about 40 can be manufactured.
ぐ実施例２〉
次に、ＺｎＯ粉末にＢｉ２Ｏ３、Ｃｏｏ 、 ＭｎＯ２
、５ｂ２０３ 、 。Example 2 Next, Bi2O3, Coo, MnO2 were added to ZnO powder.
, 5b203, .
ＮｉＯ、Ｃｒ２Ｏ５をそれぞれ１，０モル％ 、 ０．
６モル％ 。NiO and Cr2O5 were each 1.0 mol% and 0.
6 mol%.
０．６モルチ、０．５モル係、０．５モル％、０．１モ
ル係添加し、これにバインダーと水を加え混合する。0.6 mol%, 0.5 mol%, 0.5 mol%, and 0.1 mol% are added, and the binder and water are added and mixed.
これをスプレードライヤーにて乾燥、造粒し基材を得る
。これに上記実施例１と同一組成の粒成長促進剤用に造
粒粉を作成する。この造粒粉を粒径６ｏ〜２００μｍに
なるようメソシュカットを行い、粒成長促進剤として用
い、実施例１と同一の条件で試料を作成し、電気的特性
を調べた。This is dried with a spray dryer and granulated to obtain a base material. In addition, a granulated powder for a grain growth promoter having the same composition as in Example 1 is prepared. This granulated powder was mesocut to a particle size of 60 to 200 μm, used as a grain growth promoter, and a sample was prepared under the same conditions as in Example 1, and its electrical properties were examined.
第５図は基材に粒成長促進剤を４０重重量部加した試料
の単位素子厚み当りのバリスタ電圧（Ｖ１ｍム／ｎｕｎ
）および電圧非直線指数（α）と、粒成長促進剤中のム
１２０５濃度との関係を示した図である。第６図は基材
にム１２０ｓを０．５〜７．５Ｘ１０−３モルチ添加し
た原料粉を成型、炉詰した試料のＶｊｍム／ｎ＋ｍ 、
αの値である。この基材を用いた場合にも、粒成長促進
剤中の五ｌｈｏｓｍ度が１．６〜８０×１０ モル係の
場合、Ｖ、ｍム／ｍｍが６０〜１ｔｓＶに低下するがα
は〜４ｏ程度と良好な値を示す。一方、この基材に直接
ム１２０ｓを添加した場合、人１２０５濃度が０〜７．
６×１０モル係で、ｖ１ｍム／ｍｒｎはわずかに低下し
、αはその濃度とともに大きく低下する。Figure 5 shows the varistor voltage (V1 mm/nun) per unit element thickness of a sample in which 40 parts by weight of a grain growth promoter was added to the base material.
) and voltage nonlinearity index (α), and the relationship between Mu1205 concentration in the grain growth promoter. Figure 6 shows the Vjm/n+m of a sample obtained by molding raw material powder with 0.5 to 7.5 x 10-3 mulch of Mu 120s added to the base material and packing it in an oven.
is the value of α. Even when this base material is used, when the degree of hosm in the grain growth promoter is 1.6 to 80 × 10 mol, V, mm/mm decreases to 60 to 1 tsV, but α
shows a good value of about 4o. On the other hand, when Mu 120s was directly added to this base material, the human 1205 concentration was 0 to 7.
At 6×10 molar ratios, v1 mm/mrn decreases slightly and α decreases significantly with its concentration.
第７図および第８図は基材に添加する粒成長促進剤の量
を変化された場合の７１ｍ１７ｍｍ 、αを示したもの
である。第７図、第８図で粒成長促進剤中の人６２ Ｏ
５は曲線ｄが１．０Ｘ１０モルチ９曲線ｅが２．５ Ｘ
１０ モル％ 、曲線ｆが７，５ Ｘ １０ モル％
である。これよりム１２０３濃度が１，０Ｘ１０モルチ
の場合、粒成長促進剤の添加量を増してもｖ１ｍム／ｍ
ｍは低下しない。一方、ムＩｈＯ３濃度が２．５ Ｘ
１０ モル係の場合、粒成長促進剤の添加量が２５重
量％以上でｖ１１１１ム／ｍｒｎが低下し、ＺｎＯ粒成
長が発生している。また、αは８０重量％を超えると急
激に低下する。図示していないが、人１２０ｓａ度が１
ｊＯＸ１０−モル係の場合でも同様の傾向が確認された
。そして、ムｈＯｓｍ度が７．５ Ｘ １０モル係の場
合、基材に対する添加量が低くてもＶ、ｍム／ｍｍは低
下するものの、αが非常に低下し、バリスタとして使用
できなくなる。以上の実験結果から、粒成長促進剤中（
Ｄ Ａｊ？２０ｓ （Ｄａ度は１．５〜５，０Ｘ１０−
Ｅ−ル％、基材に対する添加量は２５〜８０重量％が最
適であることがわかる。Figures 7 and 8 show 71m17mm and α when the amount of grain growth promoter added to the base material was varied. In Figures 7 and 8, 62 O in the grain growth promoter.
5 is curve d is 1.0X10 morch 9 curve e is 2.5X
10 mol%, curve f is 7,5 x 10 mol%
It is. From this, when the Mu1203 concentration is 1.0 x 10 molt, even if the amount of grain growth promoter added is increased, v1mm/m
m does not decrease. On the other hand, when the mu IhO3 concentration is 2.5
In the case of 10 molar ratio, when the amount of grain growth promoter added is 25% by weight or more, v1111 m/mrn decreases and ZnO grain growth occurs. Further, when α exceeds 80% by weight, it decreases rapidly. Although not shown, a person's 120sa degree is 1
A similar tendency was confirmed in the case of 10-mole of jOX. When the degree of hOsm is 7.5 x 10 mol, V and mm/mm decrease even if the amount added to the base material is low, but α decreases so much that it cannot be used as a varistor. From the above experimental results, it was found that in the grain growth promoter (
D Aj? 20s (Da degree is 1.5~5,0X10-
It can be seen that the optimum amount of E-leum added to the base material is 25 to 80% by weight.
発明の効果
以上のように本発明によれば、バリスタ特性を有する造
粒粉にＡｄ２０３ 、 ＴｉＯ２などを含む焼結体自身
がバリスタ特性を有する造粒粉を粒成長促進剤として添
加することにより、バリスタ電圧が低く、電圧非直線性
の高い酸化亜鉛バリスタを製造することができる。Effects of the Invention As described above, according to the present invention, by adding the granulated powder having varistor properties to the granulated powder whose sintered body itself containing Ad203, TiO2, etc. has varistor properties as a grain growth promoter, A zinc oxide varistor with low varistor voltage and high voltage nonlinearity can be manufactured.
なお、本実施例では基材および粒成長促進剤にＺｎＯ、
Ｂｉ２Ｏ３、Ｃｏ Ｏ、ＭｎＯ２、ＮｉＯ、５ｂ２０５
、 ＴｉＯ２。In addition, in this example, ZnO,
Bi2O3, CoO, MnO2, NiO, 5b205
, TiO2.
Ｃｒ２Ｏ５を用いたが、バリスタとしての特性を向上さ
セル他の金属酸化物、例えば５ｉ０２ 、 Ｐｂ Ｏ、
５ｎ０２ 。Although Cr2O5 was used, other metal oxides such as 5i02, PbO,
5n02.
ＡｇｚＯ＋ ＭｇＯ＋ Ｐｒ６Ｏ１１などを用いても本
発明の効果に変わりはない。Even if AgzO+MgO+Pr6O11 or the like is used, the effects of the present invention will not change.
第１図〜第８図の図面はいずれも本発明例、参考例の特
性を示しており、第１図は粒成長促進剤中のｋ１２０ｓ
６度とＶｊｍム／ｍｍおよびαの関係の特性図、第２
図は粒成長促進剤のみを焼結させた試料のＡβ２０５ａ
度とｖ１ｍム／ｍｍ、およびαの関係の特性図、第３図
および第４図は粒成長促進剤の添加量とＶ１ｍム／ｍｍ
、αとの関係を示す特性図、第５図は粒成長促進剤中
のＡβ２０５濃度と”１ｍム／ｍｍおよびαの関係の特
性図、第６図は基材に人β２０５を添加した試料のＡ／
！２ｏｓ ６度とｖ１ｍム／ｍｍ 、αとの関係の特性
図、第７図および第８図は粒成長促進剤の添加量と”ｉ
ｎム／ｍｍ 、αとの関係を示す特性図である。
代理人の氏名 弁理士 中 尾 敏 男 ほか１多用
１ 図
−ＡｂＯｓ’＝３ν（（１０モルプ・）第２図
＝７”ｑｆ！２０ｓｉ春−２（ジ（ｉｏ−物レブ・）第
３図
→オ葵１％；グロ％（峰ブ、）
第４図
−が牙遊１１滞加重（重量ブ、）
第５図
→ Ａア２０３プ―し巾ミ（ｔＯ−’モリレゾ・）第
７を図
一執側１滞畑ｔ（能１・）
第８図The drawings in Fig. 1 to Fig. 8 all show the characteristics of the present invention example and the reference example, and Fig. 1 shows the k120s in the grain growth promoter.
Characteristic diagram of the relationship between 6 degrees and Vjmm/mm and α, 2nd
The figure shows Aβ205a of a sample in which only the grain growth promoter was sintered.
Figures 3 and 4 are characteristic diagrams showing the relationship between grain growth accelerator and V1mm/mm, and α.
Figure 5 is a characteristic diagram showing the relationship between Aβ205 concentration in the grain growth promoter and 1 mm/mm and α. Figure 6 is a characteristic diagram showing the relationship between Aβ205 concentration in the grain growth promoter and α. A/
! Characteristic diagrams of the relationship between 2os 6 degrees, v1mm/mm and α, Figures 7 and 8 show the addition amount of grain growth promoter and "i"
FIG. 3 is a characteristic diagram showing the relationship between nm/mm 2 and α. Name of agent: Patent attorney Toshio Nakao and 1 others
1 Figure-AbOs'=3ν((10molp・)2nd figure=7"qf!20si spring-2(di(io-monorev・)3rd figure→Ooi 1%; Gro%(minebu,) Fig. 4 - is the stagnation load (weight) Fig. 5 → Aa 203 pool width (tO-' Morirezo) No.
Figure 7. Ichitsu side 1 Tobata t (Noh 1.) Figure 8
Claims (1)
とする造粒粉を基材とし、少なくともＡｌ＿２Ｏ＿３を
１．５〜５．０×１０＾−＾３モル％を含み、ＺｎＯ、
Ｂｉ＿２Ｏ＿３、ＴｉＯ＿２などの金属酸化物からなる
焼結体自身がバリスタ特性を有する造粒粉を粒成長促進
剤とし、上記基材に前記粒成長促進剤を２５〜８０重量
％添加した原料粉を、混合、成型、焼結してなるバリス
タの製造方法。The sintered body itself is based on granulated powder mainly composed of zinc oxide, which has varistor properties, contains at least 1.5 to 5.0 x 10^-^3 mol% of Al_2O_3, and contains ZnO,
The sintered body itself made of metal oxides such as Bi_2O_3 and TiO_2 has varistor properties. Granulated powder is used as a grain growth promoter, and the raw material powder is prepared by adding 25 to 80% by weight of the grain growth promoter to the base material. A method for manufacturing varistors by mixing, molding, and sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61077137A JPH0795482B2 (en) | 1986-04-03 | 1986-04-03 | Varistor manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61077137A JPH0795482B2 (en) | 1986-04-03 | 1986-04-03 | Varistor manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62232904A true JPS62232904A (en) | 1987-10-13 |
| JPH0795482B2 JPH0795482B2 (en) | 1995-10-11 |
Family
ID=13625411
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61077137A Expired - Lifetime JPH0795482B2 (en) | 1986-04-03 | 1986-04-03 | Varistor manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0795482B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01289218A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacture of varistor |
| JPH01289210A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacture of varistor |
| JPH01289215A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacture of varistor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577903A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Method of producing voltage non-linear resistor |
| JPS5918602A (en) * | 1982-07-14 | 1984-01-31 | ジ−・テイ−・イ−・ラボラトリ−ズ・インコ−ポレイテツド | Low voltage ceramic varistor |
-
1986
- 1986-04-03 JP JP61077137A patent/JPH0795482B2/en not_active Expired - Lifetime
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS577903A (en) * | 1980-06-17 | 1982-01-16 | Matsushita Electric Ind Co Ltd | Method of producing voltage non-linear resistor |
| JPS5918602A (en) * | 1982-07-14 | 1984-01-31 | ジ−・テイ−・イ−・ラボラトリ−ズ・インコ−ポレイテツド | Low voltage ceramic varistor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01289218A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacture of varistor |
| JPH01289210A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacture of varistor |
| JPH01289215A (en) * | 1988-05-17 | 1989-11-21 | Matsushita Electric Ind Co Ltd | Manufacture of varistor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0795482B2 (en) | 1995-10-11 |
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