JPS58122701A - Method of producing voltage nonlinear resistor - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] Technical field of invention The present invention relates to a method of manufacturing a voltage non-[llll resistor].

Technical Background and Problems of the Invention The conventional method for producing voltage non-m-line antibodies uses znO as the main component,
Bi, O,, 8kl, O,, co, o, as subcomponents.
, MnO, M40s, etc. Gold II411! After adding a small amount of compound and mixing and molding,
A sintered body was obtained by firing at a temperature of . The voltage non-m-line resistor thus obtained has excellent non-Il line property and is used as a surge absorbing element in various devices. However, when used as an internal bulk for a power surge arrester, C had the following drawbacks.In other words, when an equal shock current is applied, the characteristics are greatly improved, and the non-1 The characteristics are not sufficient and the buffer size of small current range characteristics is also large depending on the production lot.
A so-called valence control method is known in which a trace amount of Mut ions is diffused during sintering to lower the resistivity of ZnO. MuL has a very small amount of several to several hundreds of ppm and has no effect on its properties.

However, in the conventional method of simply mixing the main component ZnO and subcomponents and sintering the mixture, the mu-L component of the super-moldy lid is sufficiently reduced! It was not uniformly dispersed into the 10 crystals, and most of it was incorporated into the spinel crystals and grain boundary phases. This is considered to be the reason why it was not possible to sufficiently stabilize the characteristics in the small current range and the characteristics against impact currents. It is also believed that even a slight liquefaction of the mixing conditions would activate the state of diffusion of the mu and the components into the ZnO crystal, and this would be the cause of the loft change characteristics in the buff.

Object of the Invention The present invention has been made to address these drawbacks, and provides a method for manufacturing a voltage non-wire resistor that has excellent large current range characteristics and shock current characteristics, and has small fluctuations in small current range characteristics. The purpose is to provide

Summary of the Invention The present invention is characterized in that only the main components, ZnO and aluminum nitrate, are prepared, and then other subcomponents are added and mixed to this calcined product, and this mixture is shaped and then fired.

Examples of the invention The present invention will be explained below using examples.

First, the total amount of ZnO and aluminum nitrate, which are the main components, is weighed, water is added to this, mixed in a pot mill, and after drying
Calcinate at ℃. After grinding this with a bot mill, B1101, BbgOB, co, o, ,
MnO etc. are added and heated, this mixture is molded, placed in an electric furnace and fired at 1250°C for 211r, and after cooling, it is polished.
A sintered body of 5φ×22 was obtained. Grinding 11jm4: Thermal spraying was performed and electrodes were attached. The voltage obtained in this way is m
The nonlinearity of the lI resistor in the large current range is the element (=10
The ratio of the voltage when a current of 1 mm is flowing (vlozg) and the voltage when a current of Inmu is flowing (vtmi) is ff1OKA/
Y1zenmu). Also, the curved current characteristic is 8Q20μm.
It is expressed as the improvement rate of v1 after applying 10 times of 10 times at 30 second intervals. Table 1 shows a comparison between the embodiment of the present invention and the conventional example by numbering 10 lots each.

The drawing also shows the small current range characteristics (711 μm/m) of the present invention example and the conventional example.
As is clear from the diagram and **1m which shows the state in the buffer by comparing the values of V0.
Large current area characteristics (7101mm/mm) II shock current characteristics (ΔV1mm) and small current area characteristics (V1mm/v0
．． 1) has been improved, and the buff of each rod is also small and its characteristics are well stabilized.

The reasons for the improvement of these characteristics and increased stability are as follows:
This is thought to be due to the fact that the alionium nitrate was mixed in advance with the main component, ZnO, and this was calcined (secondarily, the components were sufficiently uniformly diffused into the ZnO hem).

As described in detail, according to the present invention, large current area characteristics, impact current characteristics, and small current area characteristics are improved, and the vertical fluctuation (during buffing) of each manufacturing cost is also small. A resistor can be provided.

[Brief explanation of drawings]

The drawing is a comparative characteristic diagram showing the small current region characteristics of the conventional example and the example of the present invention during the buffering of the two manufactured PTs.

Claims (1)

[Claims] After adding and mixing the main component Zn0ki aluminum nitrate and calcining this mixture, B1 as a subcomponent is added to the calcined product.
101, IJbBOB, 0olO,, MnO, and other metal oxides are added and mixed, and the mixture is molded and then fired at a voltage of 1llI! Method of manufacturing a resistor.