JPH04269803A - Varistor - Google Patents
VaristorInfo
- Publication number
- JPH04269803A JPH04269803A JP3050296A JP5029691A JPH04269803A JP H04269803 A JPH04269803 A JP H04269803A JP 3050296 A JP3050296 A JP 3050296A JP 5029691 A JP5029691 A JP 5029691A JP H04269803 A JPH04269803 A JP H04269803A
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- varistor
- bi2o3
- ratio
- sodium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 claims abstract description 40
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 20
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims abstract description 18
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 18
- 239000011734 sodium Substances 0.000 claims abstract description 18
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 14
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000011787 zinc oxide Substances 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 3
- 239000010941 cobalt Substances 0.000 claims abstract description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 3
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 claims abstract 4
- 239000000654 additive Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 abstract description 5
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 238000005245 sintering Methods 0.000 abstract 1
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 8
- UPWOEMHINGJHOB-UHFFFAOYSA-N oxo(oxocobaltiooxy)cobalt Chemical compound O=[Co]O[Co]=O UPWOEMHINGJHOB-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000010304 firing Methods 0.000 description 4
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 1
- 238000001354 calcination Methods 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は、酸化亜鉛を主成分とし
ビスマスなどの添加物を含有してなる電圧非直線抵抗体
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a voltage nonlinear resistor containing zinc oxide as a main component and additives such as bismuth.
【０００２】0002
【従来の技術】従来から、酸化亜鉛を主成分とし少量の
添加物を含有した抵抗体は、優れた電圧非直線性を示す
ことが広く知られており、その性質を利用して避雷器等
に使用されている。そのうち、抵抗体の耐久性向上のた
めに、焼成後の抵抗体に対して４００ ℃〜９００ ℃
の温度で熱処理を行う技術が、例えば、特開昭６０ー１
４９１０１ 号公報において開示されている。[Prior Art] It has been widely known that resistors containing zinc oxide as a main component and a small amount of additives exhibit excellent voltage nonlinearity, and this property is used to make lightning arresters, etc. It is used. Among these, in order to improve the durability of the resistor, the temperature of the resistor after firing is 400 °C to 900 °C.
For example, the technology of heat treatment at a temperature of
It is disclosed in Japanese Patent No. 49101.
【０００３】0003
【発明が解決しようとする課題】しかしながら、上述し
たように抵抗体に対して熱処理を行い抵抗体の雷サージ
印加後のバリスタ電圧変化率を低減させて抵抗体の耐久
性を向上させようとすると、抵抗体の電圧非直線特性が
大きく低下し、避雷器用のバリスタ素子としての重要な
特性である制限電圧特性（制限電圧比）が悪化する問題
があった。[Problems to be Solved by the Invention] However, as described above, if an attempt is made to heat-treat the resistor to reduce the rate of change in varistor voltage after lightning surge is applied to the resistor and improve the durability of the resistor, However, there was a problem in that the voltage non-linear characteristics of the resistor were greatly reduced, and the limiting voltage characteristics (limiting voltage ratio), which are important characteristics as a varistor element for a lightning arrester, were deteriorated.
【０００４】本発明の目的は上述した課題を解消し、従
来のように素子焼成後に熱処理を行うことなく、高い耐
久性と同時に高い電圧非直線性を有する避雷器用の電圧
非直線抵抗体を提供しようとするものである。An object of the present invention is to solve the above-mentioned problems and provide a voltage nonlinear resistor for a lightning arrester that has high durability and high voltage nonlinearity without performing heat treatment after firing the element as in the conventional case. This is what I am trying to do.
【０００５】[0005]
【課題を解決するための手段】本発明の電圧非直線抵抗
体は、酸化亜鉛を主成分とし、ビスマス、アンチモン、
コバルト、アルミニウム、ナトリウムを添加剤として含
む電圧非直線抵抗体において、ビスマスをＢｉ２Ｏ３
に換算した濃度［Ｂｉ２Ｏ３ ］とナトリウムをＮａ２
Ｏに換算した濃度［Ｎａ２Ｏ］との比が、［Ｎａ２Ｏ］
／［Ｂｉ２Ｏ３ ］＝０．００２５〜０．３０の範囲内
にあることを特徴とするものである。[Means for Solving the Problems] The voltage nonlinear resistor of the present invention contains zinc oxide as a main component, and contains bismuth, antimony,
In voltage nonlinear resistors containing cobalt, aluminum, and sodium as additives, bismuth is Bi2O3
Concentration [Bi2O3 ] and sodium converted to Na2
The ratio of the concentration [Na2O] converted to O is [Na2O]
/[Bi2O3]=0.0025 to 0.30.
【０００６】[0006]
【作用】上述した構成において、添加剤としてのビスマ
スとナトリウムをそれぞれＢｉ２Ｏ３ とＮａ２Ｏとに
換算した濃度比が所定の範囲内である電圧非直線抵抗体
が、熱処理を行わなくても、制限電圧比及び雷サージ印
加後のバリスタ電圧変化率の両者が共に小さく、制限電
圧特性及び耐久性の両者を同時に満足できることを見い
だした。すなわち、電圧非直線抵抗体においてそれらの
濃度比が［Ｎａ２Ｏ］／［Ｂｉ２Ｏ３ ］＝０．００２
５〜０．３０の範囲内にあれば、後述する実施例からも
明らかなように本発明で目的とする効果を得ることがで
きるものである。[Function] In the above structure, the voltage nonlinear resistor in which the concentration ratio of bismuth and sodium as additives in terms of Bi2O3 and Na2O, respectively, is within a predetermined range, can maintain the limiting voltage ratio without heat treatment. It has been found that both the varistor voltage change rate after lightning surge application is small, and that both limiting voltage characteristics and durability can be satisfied at the same time. That is, in the voltage nonlinear resistor, their concentration ratio is [Na2O]/[Bi2O3]=0.002
If it is within the range of 5 to 0.30, the desired effects of the present invention can be obtained, as is clear from the examples described later.
【０００７】ここで、ナトリウムは粒界のＢｉ２Ｏ３
相中に存在し、バリスタ電圧変化率を抑制する作用を有
する。
ナトリウム添加量が少ない場合は、このバリスタ電圧変
化率を抑制する効果が十分発揮されない。ナトリウムの
添加量が多い場合は、粒界に存在するナトリウムがバリ
スタ電圧変化率を低下させるとともに、Ｂｉ２Ｏ３ 粒
界相に対し過剰分のナトリウムが酸化亜鉛粒内に入り、
原子価制御によりアクセプタとなりドナーを補償して制
限電圧比を増大させる。所期の効果を得るためには、い
ずれの場合も、本発明の範囲内にナトリウムとビスマス
の濃度比を保つことが必要で、その比を保ちさえすれば
、それぞれの添加量が変化しても目的の電圧非直線抵抗
体を得ることができる。[0007] Here, sodium is Bi2O3 at the grain boundary.
It exists in the phase and has the effect of suppressing the rate of change in varistor voltage. If the amount of sodium added is small, the effect of suppressing the varistor voltage change rate will not be sufficiently exerted. When a large amount of sodium is added, the sodium present in the grain boundaries reduces the rate of change in varistor voltage, and the excess sodium in the Bi2O3 grain boundary phase enters the zinc oxide grains.
By controlling the valence, it becomes an acceptor and compensates for the donor, increasing the limiting voltage ratio. In order to obtain the desired effect, in any case, it is necessary to maintain the concentration ratio of sodium and bismuth within the range of the present invention, and as long as the ratio is maintained, the amount of each added can be changed. It is also possible to obtain the desired voltage nonlinear resistor.
【０００８】[0008]
【実施例】以下、実際の例について説明する。
実施例１
表１に示すＢｉ２Ｏ３ 及びＮａ２Ｏ量とそれに対応す
る濃度比［Ｎａ２Ｏ］／［Ｂｉ２Ｏ３ ］を有し、さら
にＳｂ２Ｏ３ ：１．０ モル％、Ｃｏ２Ｏ３ ：１．
０ モル％、ＭｎＯ２：０．５ モル％、Ａｌ２Ｏ３
：０．００２５モル％、ＺｎＯ ：残部からなる組成の
原料粉末を、ボールミルで湿式混合し、乾燥、造粒後、
所定の形状に成形した。得られた成形体を脱脂して仮焼
後、昇降温速度４０〜６０℃／ｈｒ 、最高保持温度１
１００〜１２５０℃、保持時間５時間の焼成スケジュー
ルで焼成して、直径５０ｍｍ、厚さ２５ｍｍの円柱形状
の焼成体を得た。得られた焼成体の両端面を加工研摩後
、アルミニウムメタリコン等によりアルミニウム電極を
設けた。[Example] An actual example will be explained below. Example 1 The Bi2O3 and Na2O amounts and the corresponding concentration ratios [Na2O]/[Bi2O3] shown in Table 1 were used, and Sb2O3: 1.0 mol%, Co2O3: 1.
0 mol%, MnO2: 0.5 mol%, Al2O3
: 0.0025 mol%, ZnO : After wet mixing in a ball mill, drying and granulating,
It was molded into a predetermined shape. After degreasing and calcining the obtained molded body, the temperature increase/decrease rate is 40 to 60°C/hr, and the maximum holding temperature is 1.
Firing was performed on a firing schedule of 100 to 1250°C and a holding time of 5 hours to obtain a cylindrical fired body with a diameter of 50 mm and a thickness of 25 mm. After processing and polishing both end faces of the obtained fired body, aluminum electrodes were provided using aluminum metallicon or the like.
【０００９】得られた本発明例及び比較例の電圧非直線
抵抗体に対して、１ｍＡの電流が流れる電圧を素子の厚
さで除した値をバリスタ電圧として求めるとともに、電
流を１ｍＡ， ４０ＫＡ流した時の電圧の比を制限電圧
比として求めた。さらに、波形１００ＫＡ のサージを
２回同一方向に印加した前後のバリスタ電圧からバリス
タ電圧圧変化率を求めた。結果を表１に示す。For the obtained voltage nonlinear resistors of the inventive example and the comparative example, the value obtained by dividing the voltage at which a current of 1 mA flows by the thickness of the element is determined as the varistor voltage, and the current is 1 mA, 40 KA current. The ratio of the voltages at that time was determined as the limiting voltage ratio. Further, the rate of change in varistor voltage was determined from the varistor voltage before and after a surge with a waveform of 100 KA was applied twice in the same direction. The results are shown in Table 1.
【００１０】0010
【表１】[Table 1]
【００１１】表１の結果から、ナトリウムとビスマスと
の濃度比が本発明範囲内の本発明例試験Ｎｏ１〜６は、
濃度比が本発明範囲を満たさない比較例試験Ｎｏ７〜８
と比較して、制限電圧比及びバリスタ電圧変化率の両者
が小さく、優れた特性を有することがわかる。[0011] From the results in Table 1, inventive example tests Nos. 1 to 6 in which the concentration ratio of sodium and bismuth was within the range of the present invention,
Comparative example test Nos. 7 to 8 where the concentration ratio does not meet the range of the present invention
It can be seen that both the limiting voltage ratio and the varistor voltage change rate are small compared to the above, and that the varistor voltage ratio and the varistor voltage change rate are both small, indicating that the varistor has excellent characteristics.
【００１２】実施例２
表２に示すＢｉ２Ｏ３ 及びＮａ２Ｏ量とそれに対応す
る濃度比［Ｎａ２Ｏ］／［Ｂｉ２Ｏ３ ］を有し、さら
にＳｂ２Ｏ３ ：１．０ モル％、Ｃｏ２Ｏ３ ：１．
０ モル％、ＭｎＯ２：０．５ モル％、Ａｌ２Ｏ３
：０．００２５モル％、ＺｎＯ ：残部からなる組成の
原料粉末から実施例１と同一方法で電圧非直線抵抗体を
作製し、実施例１と同様にバリスタ電圧、制限電圧比、
バリスタ電圧変化率を求めた。結果を表２に示す。Example 2 It had the amounts of Bi2O3 and Na2O and the corresponding concentration ratios [Na2O]/[Bi2O3] shown in Table 2, and further contained Sb2O3: 1.0 mol%, Co2O3: 1.
0 mol%, MnO2: 0.5 mol%, Al2O3
: 0.0025 mol %, ZnO : A voltage non-linear resistor was prepared in the same manner as in Example 1 from the raw material powder with a composition consisting of the balance, and the varistor voltage, limiting voltage ratio,
The varistor voltage change rate was determined. The results are shown in Table 2.
【００１３】[0013]
【表２】[Table 2]
【００１４】表２の結果から、ナトリウムとビスマスと
の濃度比が本発明範囲内の本発明例試験Ｎｏ１〜６は、
濃度比が本発明範囲を満たさない比較例試験Ｎｏ７〜８
と比較して、制限電圧比及びバリスタ電圧変化率の両者
が小さく、優れた特性を有することがわかる。[0014] From the results in Table 2, inventive example tests Nos. 1 to 6 in which the concentration ratio of sodium and bismuth was within the range of the present invention,
Comparative example test Nos. 7 to 8 where the concentration ratio does not meet the range of the present invention
It can be seen that both the limiting voltage ratio and the varistor voltage change rate are small compared to the above, and that the varistor voltage ratio and the varistor voltage change rate are both small, indicating that the varistor has excellent characteristics.
【００１５】実施例３
表３に示すＢｉ２Ｏ３ 及びＮａ２Ｏ量とそれに対応す
る濃度比［Ｎａ２Ｏ］／［Ｂｉ２Ｏ３ ］を有し、さら
にＳｂ２Ｏ３ ：１．０ モル％、Ｃｏ２Ｏ３ ：１．
０ モル％、ＭｎＯ２：０．５ モル％、Ａｌ２Ｏ３
：０．００２５モル％、ＺｎＯ ：残部からなる組成の
原料粉末から実施例１と同一方法で電圧非直線抵抗体を
作製し、実施例１と同様にバリスタ電圧、制限電圧比、
バリスタ電圧変化率を求めた。結果を表３に示す。Example 3 It had the amounts of Bi2O3 and Na2O and the corresponding concentration ratios [Na2O]/[Bi2O3] shown in Table 3, and further contained Sb2O3: 1.0 mol%, Co2O3: 1.
0 mol%, MnO2: 0.5 mol%, Al2O3
: 0.0025 mol %, ZnO : A voltage non-linear resistor was prepared in the same manner as in Example 1 from the raw material powder with a composition consisting of the balance, and the varistor voltage, limiting voltage ratio,
The varistor voltage change rate was determined. The results are shown in Table 3.
【００１６】[0016]
【表３】[Table 3]
【００１７】表３の結果から、ナトリウムとビスマスと
の濃度比が本発明範囲内の本発明例試験Ｎｏ１〜６は、
濃度比が本発明範囲を満たさない比較例試験Ｎｏ７〜８
と比較して、制限電圧比及びバリスタ電圧変化率の両者
が小さく、優れた特性を有することがわかる。[0017] From the results in Table 3, inventive example tests Nos. 1 to 6 in which the concentration ratio of sodium and bismuth was within the range of the present invention,
Comparative example test Nos. 7 to 8 where the concentration ratio does not meet the range of the present invention
It can be seen that both the limiting voltage ratio and the varistor voltage change rate are small compared to the above, and that the varistor voltage ratio and the varistor voltage change rate are both small, indicating that the varistor has excellent characteristics.
【００１８】実施例４
表４に示すＢｉ２Ｏ３ 及びＮａ２Ｏ量とそれに対応す
る濃度比［Ｎａ２Ｏ］／［Ｂｉ２Ｏ３ ］を有し、さら
にＳｂ２Ｏ３ ：０．５ モル％、Ｃｏ２Ｏ３ ：０．
５ モル％、ＭｎＯ２：０．５ モル％、Ａｌ２Ｏ３
：０．００２５モル％、ＺｎＯ ：残部からなる組成の
原料粉末から実施例１と同一方法で電圧非直線抵抗体を
作製し、実施例１と同様にバリスタ電圧、制限電圧比、
バリスタ電圧変化率を求めた。結果を表４に示す。Example 4 It had the amounts of Bi2O3 and Na2O and the corresponding concentration ratios [Na2O]/[Bi2O3] shown in Table 4, and further contained Sb2O3: 0.5 mol%, Co2O3: 0.
5 mol%, MnO2: 0.5 mol%, Al2O3
: 0.0025 mol %, ZnO : A voltage non-linear resistor was prepared in the same manner as in Example 1 from the raw material powder with a composition consisting of the balance, and the varistor voltage, limiting voltage ratio,
The varistor voltage change rate was determined. The results are shown in Table 4.
【００１９】[0019]
【表４】[Table 4]
【００２０】表４の結果から、ナトリウムとビスマスと
の濃度比が本発明範囲内の本発明例試験Ｎｏ１〜６は、
濃度比が本発明範囲を満たさない比較例試験Ｎｏ７〜８
と比較して、制限電圧比及びバリスタ電圧変化率の両者
が小さく、優れた特性を有することがわかる。From the results in Table 4, inventive example tests Nos. 1 to 6 in which the concentration ratio of sodium and bismuth was within the inventive range,
Comparative example test Nos. 7 to 8 where the concentration ratio does not meet the range of the present invention
It can be seen that both the limiting voltage ratio and the varistor voltage change rate are small compared to the above, and that the varistor voltage ratio and the varistor voltage change rate are both small, indicating that the varistor has excellent characteristics.
【００２１】[0021]
【発明の効果】以上説明したところから明らかなように
、本発明によれば、各添加剤の添加量には関係なく、ナ
トリウムとビスマスの濃度比を限定することすなわち［
Ｎａ２Ｏ］／［Ｂｉ２Ｏ３ ］＝０．００２５〜０．３
０に限定することにより、従来のように熱処理を行うこ
となく雷サージ印加後のバリスタ電圧変化率を小さくす
ることが可能となり、制限電圧特性及び耐久性の両者が
共に高い避雷器用の電圧非直線抵抗体を得ることができ
る。Effects of the Invention As is clear from the above explanation, according to the present invention, it is possible to limit the concentration ratio of sodium and bismuth, regardless of the amount of each additive added, that is, [
Na2O]/[Bi2O3]=0.0025-0.3
By limiting the voltage to 0, it is possible to reduce the rate of change in varistor voltage after lightning surge is applied without performing heat treatment as in the past, and it is possible to reduce the voltage non-linearity for lightning arresters with both high limiting voltage characteristics and durability. A resistor can be obtained.
Claims (1)
ンチモン、コバルト、アルミニウム、ナトリウムを添加
剤として含む電圧非直線抵抗体において、ビスマスをＢ
ｉ２Ｏ３ に換算した濃度［Ｂｉ２Ｏ３ ］とナトリウ
ムをＮａ２Ｏに換算した濃度［Ｎａ２Ｏ］との比が、［
Ｎａ２Ｏ］／［Ｂｉ２Ｏ３ ］＝０．００２５〜０．３
０の範囲内にあることを特徴とする電圧比直線抵抗体。Claim 1: A voltage nonlinear resistor containing zinc oxide as a main component and bismuth, antimony, cobalt, aluminum, and sodium as additives, in which bismuth is
The ratio of the concentration [Bi2O3 ] converted to i2O3 and the concentration [Na2O] converted from sodium to Na2O is [
Na2O]/[Bi2O3]=0.0025-0.3
A voltage ratio linear resistor characterized in that the voltage ratio is within a range of 0.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3050296A JPH04269803A (en) | 1991-02-25 | 1991-02-25 | Varistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3050296A JPH04269803A (en) | 1991-02-25 | 1991-02-25 | Varistor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04269803A true JPH04269803A (en) | 1992-09-25 |
Family
ID=12854937
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3050296A Pending JPH04269803A (en) | 1991-02-25 | 1991-02-25 | Varistor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04269803A (en) |
-
1991
- 1991-02-25 JP JP3050296A patent/JPH04269803A/en active Pending
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