JPS58122687A - 半導体記憶装置 - Google Patents
半導体記憶装置Info
- Publication number
- JPS58122687A JPS58122687A JP57004559A JP455982A JPS58122687A JP S58122687 A JPS58122687 A JP S58122687A JP 57004559 A JP57004559 A JP 57004559A JP 455982 A JP455982 A JP 455982A JP S58122687 A JPS58122687 A JP S58122687A
- Authority
- JP
- Japan
- Prior art keywords
- write
- signal
- time
- write signal
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000003990 capacitor Substances 0.000 abstract 1
- 230000002401 inhibitory effect Effects 0.000 abstract 1
- 230000015654 memory Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
Landscapes
- Read Only Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57004559A JPS58122687A (ja) | 1982-01-14 | 1982-01-14 | 半導体記憶装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57004559A JPS58122687A (ja) | 1982-01-14 | 1982-01-14 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58122687A true JPS58122687A (ja) | 1983-07-21 |
JPS6245626B2 JPS6245626B2 (enrdf_load_stackoverflow) | 1987-09-28 |
Family
ID=11587394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57004559A Granted JPS58122687A (ja) | 1982-01-14 | 1982-01-14 | 半導体記憶装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58122687A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60103576A (ja) * | 1983-11-09 | 1985-06-07 | Toshiba Corp | ランダムアクセスメモリのデ−タ書き込み制御装置 |
JPS60180000A (ja) * | 1984-02-03 | 1985-09-13 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | 電界効果トランジスタとプログラム可能読取り専用メモリとを有する集積回路 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102810148B1 (ko) * | 2022-04-28 | 2025-05-19 | 한국정보통신주식회사 | 무인점포에 비치된 상품의 도난을 방지하는 전자장치 및 이의 동작방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130536A (en) * | 1976-04-26 | 1977-11-01 | Toshiba Corp | Semiconductor memory unit |
JPS558635A (en) * | 1978-06-30 | 1980-01-22 | Fujitsu Ltd | Storage device control system |
JPS5538604A (en) * | 1978-09-04 | 1980-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Memory device |
JPS5538603A (en) * | 1978-09-04 | 1980-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
-
1982
- 1982-01-14 JP JP57004559A patent/JPS58122687A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52130536A (en) * | 1976-04-26 | 1977-11-01 | Toshiba Corp | Semiconductor memory unit |
JPS558635A (en) * | 1978-06-30 | 1980-01-22 | Fujitsu Ltd | Storage device control system |
JPS5538604A (en) * | 1978-09-04 | 1980-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Memory device |
JPS5538603A (en) * | 1978-09-04 | 1980-03-18 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor memory device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60103576A (ja) * | 1983-11-09 | 1985-06-07 | Toshiba Corp | ランダムアクセスメモリのデ−タ書き込み制御装置 |
JPS60180000A (ja) * | 1984-02-03 | 1985-09-13 | エヌ・ベー・フイリツプス・フルーイランペンフアブリケン | 電界効果トランジスタとプログラム可能読取り専用メモリとを有する集積回路 |
Also Published As
Publication number | Publication date |
---|---|
JPS6245626B2 (enrdf_load_stackoverflow) | 1987-09-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100381968B1 (ko) | 고속동작용디램 | |
US9786352B2 (en) | Semiconductor memory device including refresh operations having first and second cycles | |
US5617362A (en) | Semiconductor memory device having extended data out function | |
TW451221B (en) | Semiconductor memory device and driving signal generator therefor | |
JP3467053B2 (ja) | フラッシュ・メモリ用の書込み状態機械インタフェース回路へのアドレス遷移を検出する方法と装置 | |
US5491656A (en) | Non-volatile semiconductor memory device and a method of using the same | |
JPH07109705B2 (ja) | 半導体メモリ装置 | |
US20100208529A1 (en) | Memory with reduced power supply voltage for a write operation | |
JPS6177199A (ja) | 半導体記憶装置 | |
JPS6213758B2 (enrdf_load_stackoverflow) | ||
US4893281A (en) | Semiconductor memory system with programmable address decoder | |
KR920011042B1 (ko) | Dram 복원 시스템 | |
US4397001A (en) | Semiconductor memory device | |
KR0136448B1 (ko) | 에러 자체 정정회로를 갖는 반도체 메모리 소자 | |
US4817055A (en) | Semiconductor memory circuit including bias voltage generator | |
KR910008100B1 (ko) | 반도체기억장치 | |
US5381363A (en) | Method and circuitry for performing a hidden read-modify-write | |
JPS58122687A (ja) | 半導体記憶装置 | |
US6693838B2 (en) | Semiconductor memory device equipped with refresh timing signal generator | |
JPH01149297A (ja) | 半導体メモリ | |
JP2991546B2 (ja) | 半導体集積回路 | |
JPH033317B2 (enrdf_load_stackoverflow) | ||
EP0468463B1 (en) | Semiconductor memory device | |
JP2818627B2 (ja) | 不揮発性シーケンシャルメモリ装置の読出パイプラインの初期化 | |
US5327387A (en) | Dynamic random access memory having an improved operational stability |