JPS58120594A - 液相エピタキシヤル析出法 - Google Patents
液相エピタキシヤル析出法Info
- Publication number
- JPS58120594A JPS58120594A JP57235161A JP23516182A JPS58120594A JP S58120594 A JPS58120594 A JP S58120594A JP 57235161 A JP57235161 A JP 57235161A JP 23516182 A JP23516182 A JP 23516182A JP S58120594 A JPS58120594 A JP S58120594A
- Authority
- JP
- Japan
- Prior art keywords
- compound
- temperature
- bath
- liquid phase
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000007791 liquid phase Substances 0.000 title claims description 27
- 238000000151 deposition Methods 0.000 title claims description 15
- 150000001875 compounds Chemical class 0.000 claims description 80
- 239000000203 mixture Substances 0.000 claims description 36
- 238000000034 method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 27
- 238000000407 epitaxy Methods 0.000 claims description 17
- 239000007787 solid Substances 0.000 claims description 17
- 230000008021 deposition Effects 0.000 claims description 11
- 239000007790 solid phase Substances 0.000 claims description 11
- 238000001556 precipitation Methods 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 6
- 230000000737 periodic effect Effects 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 239000012071 phase Substances 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 3
- 241000238557 Decapoda Species 0.000 claims 1
- FVIZARNDLVOMSU-UHFFFAOYSA-N ginsenoside K Natural products C1CC(C2(CCC3C(C)(C)C(O)CCC3(C)C2CC2O)C)(C)C2C1C(C)(CCC=C(C)C)OC1OC(CO)C(O)C(O)C1O FVIZARNDLVOMSU-UHFFFAOYSA-N 0.000 claims 1
- 239000007788 liquid Substances 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 5
- 238000004943 liquid phase epitaxy Methods 0.000 description 4
- 238000010587 phase diagram Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000008247 solid mixture Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000673 Indium arsenide Inorganic materials 0.000 description 1
- 240000002329 Inga feuillei Species 0.000 description 1
- 241000282344 Mellivora capensis Species 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910007709 ZnTe Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 1
- 210000003127 knee Anatomy 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8124291A FR2519032A1 (fr) | 1981-12-28 | 1981-12-28 | Procede de depot par epitaxie en phase liquide d'un compose ternaire |
| FR8124291 | 1981-12-28 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58120594A true JPS58120594A (ja) | 1983-07-18 |
Family
ID=9265424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57235161A Pending JPS58120594A (ja) | 1981-12-28 | 1982-12-28 | 液相エピタキシヤル析出法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4532001A (OSRAM) |
| EP (1) | EP0083540B1 (OSRAM) |
| JP (1) | JPS58120594A (OSRAM) |
| CA (1) | CA1217410A (OSRAM) |
| DE (1) | DE3269761D1 (OSRAM) |
| FR (1) | FR2519032A1 (OSRAM) |
| NO (1) | NO824327L (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214894A (ja) * | 1988-06-30 | 1990-01-18 | Nec Corp | 液相エピタキシャル成長方法 |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6028799B2 (ja) * | 1982-04-28 | 1985-07-06 | 富士通株式会社 | 液相エピタキシヤル成長方法 |
| FR2583782A1 (fr) * | 1985-06-24 | 1986-12-26 | Slempkes Serge | Procede de depot par epitaxie en phase liquide sur un substrat, d'un alliage au moins quaternaire, et dispositif semi-conducteur comportant un tel alliage |
| US6613162B1 (en) * | 1999-10-25 | 2003-09-02 | Rensselaer Polytechnic Institute | Multicomponent homogeneous alloys and method for making same |
| WO2006028868A2 (en) * | 2004-09-01 | 2006-03-16 | Rensselaer Polytechnic Institute | Method and apparatus for growth of multi-component single crystals |
| CN115216844B (zh) * | 2022-04-25 | 2023-09-15 | 福州大学 | 一种中远红外非线性光学晶体硫磷镉的制备及应用 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2151171A5 (en) * | 1971-08-23 | 1973-04-13 | Radiotechnique Compelec | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium |
| BE795005A (fr) * | 1972-02-09 | 1973-05-29 | Rca Corp | Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu |
| FR2183522A1 (en) * | 1972-05-08 | 1973-12-21 | Radiotechnique Compelec | Epitaxial growth of ternary cpd - by isothermal crystallisation, with control over proportions of components in final prod |
| JPS53148388A (en) * | 1977-05-31 | 1978-12-23 | Kokusai Denshin Denwa Co Ltd | Method of producing compound semiconductor crystal |
| US4401487A (en) * | 1980-11-14 | 1983-08-30 | Hughes Aircraft Company | Liquid phase epitaxy of mercury cadmium telluride layer |
-
1981
- 1981-12-28 FR FR8124291A patent/FR2519032A1/fr active Granted
-
1982
- 1982-12-22 NO NO824327A patent/NO824327L/no unknown
- 1982-12-22 CA CA000418357A patent/CA1217410A/en not_active Expired
- 1982-12-23 DE DE8282402377T patent/DE3269761D1/de not_active Expired
- 1982-12-23 EP EP82402377A patent/EP0083540B1/fr not_active Expired
- 1982-12-27 US US06/452,920 patent/US4532001A/en not_active Expired - Fee Related
- 1982-12-28 JP JP57235161A patent/JPS58120594A/ja active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0214894A (ja) * | 1988-06-30 | 1990-01-18 | Nec Corp | 液相エピタキシャル成長方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US4532001A (en) | 1985-07-30 |
| DE3269761D1 (en) | 1986-04-10 |
| CA1217410A (en) | 1987-02-03 |
| NO824327L (no) | 1983-06-29 |
| EP0083540A1 (fr) | 1983-07-13 |
| FR2519032A1 (fr) | 1983-07-01 |
| FR2519032B1 (OSRAM) | 1984-04-06 |
| EP0083540B1 (fr) | 1986-03-05 |
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