FR2519032A1 - Procede de depot par epitaxie en phase liquide d'un compose ternaire - Google Patents
Procede de depot par epitaxie en phase liquide d'un compose ternaire Download PDFInfo
- Publication number
- FR2519032A1 FR2519032A1 FR8124291A FR8124291A FR2519032A1 FR 2519032 A1 FR2519032 A1 FR 2519032A1 FR 8124291 A FR8124291 A FR 8124291A FR 8124291 A FR8124291 A FR 8124291A FR 2519032 A1 FR2519032 A1 FR 2519032A1
- Authority
- FR
- France
- Prior art keywords
- compound
- temperature
- bath
- substrate
- liquid phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 150000001875 compounds Chemical class 0.000 title claims abstract description 85
- 238000000151 deposition Methods 0.000 title claims description 12
- 238000004943 liquid phase epitaxy Methods 0.000 title description 4
- 239000000758 substrate Substances 0.000 claims abstract description 32
- 239000007791 liquid phase Substances 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 26
- 238000000407 epitaxy Methods 0.000 claims abstract description 18
- 239000007790 solid phase Substances 0.000 claims abstract description 14
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims description 32
- 239000007787 solid Substances 0.000 claims description 18
- 229910052738 indium Inorganic materials 0.000 claims description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 5
- 101100386054 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) CYS3 gene Proteins 0.000 claims 1
- 239000013078 crystal Substances 0.000 claims 1
- 101150035983 str1 gene Proteins 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- QFLWZFQWSBQYPS-AWRAUJHKSA-N (3S)-3-[[(2S)-2-[[(2S)-2-[5-[(3aS,6aR)-2-oxo-1,3,3a,4,6,6a-hexahydrothieno[3,4-d]imidazol-4-yl]pentanoylamino]-3-methylbutanoyl]amino]-3-(4-hydroxyphenyl)propanoyl]amino]-4-[1-bis(4-chlorophenoxy)phosphorylbutylamino]-4-oxobutanoic acid Chemical compound CCCC(NC(=O)[C@H](CC(O)=O)NC(=O)[C@H](Cc1ccc(O)cc1)NC(=O)[C@@H](NC(=O)CCCCC1SC[C@@H]2NC(=O)N[C@H]12)C(C)C)P(=O)(Oc1ccc(Cl)cc1)Oc1ccc(Cl)cc1 QFLWZFQWSBQYPS-AWRAUJHKSA-N 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 11
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 239000000470 constituent Substances 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 229910000673 Indium arsenide Inorganic materials 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- BTFMCMVEUCGQDX-UHFFFAOYSA-N 1-[10-[3-[4-(2-hydroxyethyl)-1-piperidinyl]propyl]-2-phenothiazinyl]ethanone Chemical compound C12=CC(C(=O)C)=CC=C2SC2=CC=CC=C2N1CCCN1CCC(CCO)CC1 BTFMCMVEUCGQDX-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229960004265 piperacetazine Drugs 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VVNCNSJFMMFHPL-VKHMYHEASA-N D-penicillamine Chemical compound CC(C)(S)[C@@H](N)C(O)=O VVNCNSJFMMFHPL-VKHMYHEASA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009849 deactivation Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229940075911 depen Drugs 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/10—Controlling or regulating
- C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8124291A FR2519032A1 (fr) | 1981-12-28 | 1981-12-28 | Procede de depot par epitaxie en phase liquide d'un compose ternaire |
| NO824327A NO824327L (no) | 1981-12-28 | 1982-12-22 | Fremgangsmaate til utfelling av en ternaer forbindelse ved epitaksi i flytende fase |
| CA000418357A CA1217410A (en) | 1981-12-28 | 1982-12-22 | Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound |
| DE8282402377T DE3269761D1 (en) | 1981-12-28 | 1982-12-23 | Process for the liquid epitaxial deposition of a ternary compound |
| EP82402377A EP0083540B1 (fr) | 1981-12-28 | 1982-12-23 | Procédé de depôt par épitaxie en phase liquide d'un composé ternaire |
| US06/452,920 US4532001A (en) | 1981-12-28 | 1982-12-27 | Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound |
| JP57235161A JPS58120594A (ja) | 1981-12-28 | 1982-12-28 | 液相エピタキシヤル析出法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR8124291A FR2519032A1 (fr) | 1981-12-28 | 1981-12-28 | Procede de depot par epitaxie en phase liquide d'un compose ternaire |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2519032A1 true FR2519032A1 (fr) | 1983-07-01 |
| FR2519032B1 FR2519032B1 (OSRAM) | 1984-04-06 |
Family
ID=9265424
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8124291A Granted FR2519032A1 (fr) | 1981-12-28 | 1981-12-28 | Procede de depot par epitaxie en phase liquide d'un compose ternaire |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US4532001A (OSRAM) |
| EP (1) | EP0083540B1 (OSRAM) |
| JP (1) | JPS58120594A (OSRAM) |
| CA (1) | CA1217410A (OSRAM) |
| DE (1) | DE3269761D1 (OSRAM) |
| FR (1) | FR2519032A1 (OSRAM) |
| NO (1) | NO824327L (OSRAM) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6028799B2 (ja) * | 1982-04-28 | 1985-07-06 | 富士通株式会社 | 液相エピタキシヤル成長方法 |
| FR2583782A1 (fr) * | 1985-06-24 | 1986-12-26 | Slempkes Serge | Procede de depot par epitaxie en phase liquide sur un substrat, d'un alliage au moins quaternaire, et dispositif semi-conducteur comportant un tel alliage |
| JPH0214894A (ja) * | 1988-06-30 | 1990-01-18 | Nec Corp | 液相エピタキシャル成長方法 |
| US6613162B1 (en) * | 1999-10-25 | 2003-09-02 | Rensselaer Polytechnic Institute | Multicomponent homogeneous alloys and method for making same |
| WO2006028868A2 (en) * | 2004-09-01 | 2006-03-16 | Rensselaer Polytechnic Institute | Method and apparatus for growth of multi-component single crystals |
| CN115216844B (zh) * | 2022-04-25 | 2023-09-15 | 福州大学 | 一种中远红外非线性光学晶体硫磷镉的制备及应用 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2151171A5 (en) * | 1971-08-23 | 1973-04-13 | Radiotechnique Compelec | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium |
| FR2183522A1 (en) * | 1972-05-08 | 1973-12-21 | Radiotechnique Compelec | Epitaxial growth of ternary cpd - by isothermal crystallisation, with control over proportions of components in final prod |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE795005A (fr) * | 1972-02-09 | 1973-05-29 | Rca Corp | Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu |
| JPS53148388A (en) * | 1977-05-31 | 1978-12-23 | Kokusai Denshin Denwa Co Ltd | Method of producing compound semiconductor crystal |
| US4401487A (en) * | 1980-11-14 | 1983-08-30 | Hughes Aircraft Company | Liquid phase epitaxy of mercury cadmium telluride layer |
-
1981
- 1981-12-28 FR FR8124291A patent/FR2519032A1/fr active Granted
-
1982
- 1982-12-22 NO NO824327A patent/NO824327L/no unknown
- 1982-12-22 CA CA000418357A patent/CA1217410A/en not_active Expired
- 1982-12-23 DE DE8282402377T patent/DE3269761D1/de not_active Expired
- 1982-12-23 EP EP82402377A patent/EP0083540B1/fr not_active Expired
- 1982-12-27 US US06/452,920 patent/US4532001A/en not_active Expired - Fee Related
- 1982-12-28 JP JP57235161A patent/JPS58120594A/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2151171A5 (en) * | 1971-08-23 | 1973-04-13 | Radiotechnique Compelec | Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium |
| FR2183522A1 (en) * | 1972-05-08 | 1973-12-21 | Radiotechnique Compelec | Epitaxial growth of ternary cpd - by isothermal crystallisation, with control over proportions of components in final prod |
Also Published As
| Publication number | Publication date |
|---|---|
| US4532001A (en) | 1985-07-30 |
| DE3269761D1 (en) | 1986-04-10 |
| CA1217410A (en) | 1987-02-03 |
| JPS58120594A (ja) | 1983-07-18 |
| NO824327L (no) | 1983-06-29 |
| EP0083540A1 (fr) | 1983-07-13 |
| FR2519032B1 (OSRAM) | 1984-04-06 |
| EP0083540B1 (fr) | 1986-03-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |