FR2519032B1 - - Google Patents

Info

Publication number
FR2519032B1
FR2519032B1 FR8124291A FR8124291A FR2519032B1 FR 2519032 B1 FR2519032 B1 FR 2519032B1 FR 8124291 A FR8124291 A FR 8124291A FR 8124291 A FR8124291 A FR 8124291A FR 2519032 B1 FR2519032 B1 FR 2519032B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8124291A
Other languages
French (fr)
Other versions
FR2519032A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BENCHIMOL JEAN LOUIS
Original Assignee
BENCHIMOL JEAN LOUIS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BENCHIMOL JEAN LOUIS filed Critical BENCHIMOL JEAN LOUIS
Priority to FR8124291A priority Critical patent/FR2519032A1/fr
Priority to NO824327A priority patent/NO824327L/no
Priority to CA000418357A priority patent/CA1217410A/en
Priority to DE8282402377T priority patent/DE3269761D1/de
Priority to EP82402377A priority patent/EP0083540B1/fr
Priority to US06/452,920 priority patent/US4532001A/en
Priority to JP57235161A priority patent/JPS58120594A/ja
Publication of FR2519032A1 publication Critical patent/FR2519032A1/fr
Application granted granted Critical
Publication of FR2519032B1 publication Critical patent/FR2519032B1/fr
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
    • C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • C30B19/106—Controlling or regulating adding crystallising material or reactants forming it in situ to the liquid
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
    • C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
FR8124291A 1981-12-28 1981-12-28 Procede de depot par epitaxie en phase liquide d'un compose ternaire Granted FR2519032A1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR8124291A FR2519032A1 (fr) 1981-12-28 1981-12-28 Procede de depot par epitaxie en phase liquide d'un compose ternaire
NO824327A NO824327L (no) 1981-12-28 1982-12-22 Fremgangsmaate til utfelling av en ternaer forbindelse ved epitaksi i flytende fase
CA000418357A CA1217410A (en) 1981-12-28 1982-12-22 Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound
DE8282402377T DE3269761D1 (en) 1981-12-28 1982-12-23 Process for the liquid epitaxial deposition of a ternary compound
EP82402377A EP0083540B1 (fr) 1981-12-28 1982-12-23 Procédé de depôt par épitaxie en phase liquide d'un composé ternaire
US06/452,920 US4532001A (en) 1981-12-28 1982-12-27 Process for the liquid phase epitaxial deposition of a monocrystalline ternary compound
JP57235161A JPS58120594A (ja) 1981-12-28 1982-12-28 液相エピタキシヤル析出法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8124291A FR2519032A1 (fr) 1981-12-28 1981-12-28 Procede de depot par epitaxie en phase liquide d'un compose ternaire

Publications (2)

Publication Number Publication Date
FR2519032A1 FR2519032A1 (fr) 1983-07-01
FR2519032B1 true FR2519032B1 (OSRAM) 1984-04-06

Family

ID=9265424

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8124291A Granted FR2519032A1 (fr) 1981-12-28 1981-12-28 Procede de depot par epitaxie en phase liquide d'un compose ternaire

Country Status (7)

Country Link
US (1) US4532001A (OSRAM)
EP (1) EP0083540B1 (OSRAM)
JP (1) JPS58120594A (OSRAM)
CA (1) CA1217410A (OSRAM)
DE (1) DE3269761D1 (OSRAM)
FR (1) FR2519032A1 (OSRAM)
NO (1) NO824327L (OSRAM)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6028799B2 (ja) * 1982-04-28 1985-07-06 富士通株式会社 液相エピタキシヤル成長方法
FR2583782A1 (fr) * 1985-06-24 1986-12-26 Slempkes Serge Procede de depot par epitaxie en phase liquide sur un substrat, d'un alliage au moins quaternaire, et dispositif semi-conducteur comportant un tel alliage
JPH0214894A (ja) * 1988-06-30 1990-01-18 Nec Corp 液相エピタキシャル成長方法
US6613162B1 (en) * 1999-10-25 2003-09-02 Rensselaer Polytechnic Institute Multicomponent homogeneous alloys and method for making same
US7641733B2 (en) * 2004-09-01 2010-01-05 Rensselaer Polytechnic Institute Method and apparatus for growth of multi-component single crystals
CN115216844B (zh) * 2022-04-25 2023-09-15 福州大学 一种中远红外非线性光学晶体硫磷镉的制备及应用

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2151171A5 (en) * 1971-08-23 1973-04-13 Radiotechnique Compelec Epitaxial gallium aluminium arsenide layer - from liquid phase soln of aluminium arsenide in gallium
BE795005A (fr) * 1972-02-09 1973-05-29 Rca Corp Procede et appareil de croissance epitaxiale d'une matiere semi-conductrice a partir de la phase liquide et produit ainsi obtenu
FR2183522A1 (en) * 1972-05-08 1973-12-21 Radiotechnique Compelec Epitaxial growth of ternary cpd - by isothermal crystallisation, with control over proportions of components in final prod
JPS53148388A (en) * 1977-05-31 1978-12-23 Kokusai Denshin Denwa Co Ltd Method of producing compound semiconductor crystal
US4401487A (en) * 1980-11-14 1983-08-30 Hughes Aircraft Company Liquid phase epitaxy of mercury cadmium telluride layer

Also Published As

Publication number Publication date
FR2519032A1 (fr) 1983-07-01
NO824327L (no) 1983-06-29
EP0083540B1 (fr) 1986-03-05
CA1217410A (en) 1987-02-03
JPS58120594A (ja) 1983-07-18
DE3269761D1 (en) 1986-04-10
US4532001A (en) 1985-07-30
EP0083540A1 (fr) 1983-07-13

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Legal Events

Date Code Title Description
ST Notification of lapse