JPS58119668A - 半導体集積回路装置の製造方法 - Google Patents
半導体集積回路装置の製造方法Info
- Publication number
- JPS58119668A JPS58119668A JP57001706A JP170682A JPS58119668A JP S58119668 A JPS58119668 A JP S58119668A JP 57001706 A JP57001706 A JP 57001706A JP 170682 A JP170682 A JP 170682A JP S58119668 A JPS58119668 A JP S58119668A
- Authority
- JP
- Japan
- Prior art keywords
- region
- polycrystalline silicon
- layer
- silicon layer
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57001706A JPS58119668A (ja) | 1982-01-11 | 1982-01-11 | 半導体集積回路装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP57001706A JPS58119668A (ja) | 1982-01-11 | 1982-01-11 | 半導体集積回路装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS58119668A true JPS58119668A (ja) | 1983-07-16 |
JPH038582B2 JPH038582B2 (enrdf_load_stackoverflow) | 1991-02-06 |
Family
ID=11508991
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57001706A Granted JPS58119668A (ja) | 1982-01-11 | 1982-01-11 | 半導体集積回路装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS58119668A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63186472A (ja) * | 1987-01-28 | 1988-08-02 | Mitsubishi Electric Corp | 半導体集積回路装置およびその製造方法 |
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5627965A (en) * | 1979-08-15 | 1981-03-18 | Nec Corp | Manufacture of semiconductor device |
JPS6428508A (en) * | 1987-07-24 | 1989-01-31 | Kajima Corp | Method for apparatus for detecting wall thickness of chimney |
-
1982
- 1982-01-11 JP JP57001706A patent/JPS58119668A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5627965A (en) * | 1979-08-15 | 1981-03-18 | Nec Corp | Manufacture of semiconductor device |
JPS6428508A (en) * | 1987-07-24 | 1989-01-31 | Kajima Corp | Method for apparatus for detecting wall thickness of chimney |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5262336A (en) * | 1986-03-21 | 1993-11-16 | Advanced Power Technology, Inc. | IGBT process to produce platinum lifetime control |
JPS63186472A (ja) * | 1987-01-28 | 1988-08-02 | Mitsubishi Electric Corp | 半導体集積回路装置およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH038582B2 (enrdf_load_stackoverflow) | 1991-02-06 |