JPS58119668A - 半導体集積回路装置の製造方法 - Google Patents

半導体集積回路装置の製造方法

Info

Publication number
JPS58119668A
JPS58119668A JP57001706A JP170682A JPS58119668A JP S58119668 A JPS58119668 A JP S58119668A JP 57001706 A JP57001706 A JP 57001706A JP 170682 A JP170682 A JP 170682A JP S58119668 A JPS58119668 A JP S58119668A
Authority
JP
Japan
Prior art keywords
region
polycrystalline silicon
layer
silicon layer
conductivity type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57001706A
Other languages
English (en)
Japanese (ja)
Other versions
JPH038582B2 (enrdf_load_stackoverflow
Inventor
Akira Kawakatsu
川勝 章
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP57001706A priority Critical patent/JPS58119668A/ja
Publication of JPS58119668A publication Critical patent/JPS58119668A/ja
Publication of JPH038582B2 publication Critical patent/JPH038582B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30Devices controlled by electric currents or voltages
    • H10D48/32Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34Bipolar devices
    • H10D48/345Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Bipolar Transistors (AREA)
JP57001706A 1982-01-11 1982-01-11 半導体集積回路装置の製造方法 Granted JPS58119668A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57001706A JPS58119668A (ja) 1982-01-11 1982-01-11 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57001706A JPS58119668A (ja) 1982-01-11 1982-01-11 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS58119668A true JPS58119668A (ja) 1983-07-16
JPH038582B2 JPH038582B2 (enrdf_load_stackoverflow) 1991-02-06

Family

ID=11508991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57001706A Granted JPS58119668A (ja) 1982-01-11 1982-01-11 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPS58119668A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63186472A (ja) * 1987-01-28 1988-08-02 Mitsubishi Electric Corp 半導体集積回路装置およびその製造方法
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device
JPS6428508A (en) * 1987-07-24 1989-01-31 Kajima Corp Method for apparatus for detecting wall thickness of chimney

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5627965A (en) * 1979-08-15 1981-03-18 Nec Corp Manufacture of semiconductor device
JPS6428508A (en) * 1987-07-24 1989-01-31 Kajima Corp Method for apparatus for detecting wall thickness of chimney

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
JPS63186472A (ja) * 1987-01-28 1988-08-02 Mitsubishi Electric Corp 半導体集積回路装置およびその製造方法

Also Published As

Publication number Publication date
JPH038582B2 (enrdf_load_stackoverflow) 1991-02-06

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