JPS58115857A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS58115857A
JPS58115857A JP56215817A JP21581781A JPS58115857A JP S58115857 A JPS58115857 A JP S58115857A JP 56215817 A JP56215817 A JP 56215817A JP 21581781 A JP21581781 A JP 21581781A JP S58115857 A JPS58115857 A JP S58115857A
Authority
JP
Japan
Prior art keywords
emitter
base
regions
degrees
contact holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56215817A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0119272B2 (enExample
Inventor
Makoto Tanaka
誠 田中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP56215817A priority Critical patent/JPS58115857A/ja
Publication of JPS58115857A publication Critical patent/JPS58115857A/ja
Publication of JPH0119272B2 publication Critical patent/JPH0119272B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP56215817A 1981-12-28 1981-12-28 半導体装置 Granted JPS58115857A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56215817A JPS58115857A (ja) 1981-12-28 1981-12-28 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56215817A JPS58115857A (ja) 1981-12-28 1981-12-28 半導体装置

Publications (2)

Publication Number Publication Date
JPS58115857A true JPS58115857A (ja) 1983-07-09
JPH0119272B2 JPH0119272B2 (enExample) 1989-04-11

Family

ID=16678742

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56215817A Granted JPS58115857A (ja) 1981-12-28 1981-12-28 半導体装置

Country Status (1)

Country Link
JP (1) JPS58115857A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129355U (enExample) * 1985-02-01 1986-08-13

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61129355U (enExample) * 1985-02-01 1986-08-13

Also Published As

Publication number Publication date
JPH0119272B2 (enExample) 1989-04-11

Similar Documents

Publication Publication Date Title
JPS61253U (ja) 自己整列ゲートｃｍｏｓ装置
US4125441A (en) Isolated bump circuitry on tape utilizing electroforming
KR20040068922A (ko) 개선된 열 제거를 지닌 실리콘 온 인슐레이터 장치와 제조방법
US4729969A (en) Method for forming silicide electrode in semiconductor device
JPS58115857A (ja) 半導体装置
US6429060B1 (en) Method for fabricating semiconductor device
JPS6271256A (ja) 化合物半導体集積回路
JPH01214040A (ja) 半導体集積回路の製造方法
JPS61245571A (ja) 半導体装置及びその製造方法
JPH0682758B2 (ja) 半導体集積回路の形成方法
KR100456005B1 (ko) 접합형 바이폴라 트랜지스터의 구조 및 그의 전극 제조방법
JPS615582A (ja) 多層シヨツトキ電極の形成方法
JP2868771B2 (ja) 電子ビーム露光用位置合せマークの形成方法
JPH05145062A (ja) 単一電子トランジスタの作製法
JPS62193280A (ja) シヨツトキ−バリアダイオ−ド
JPS6351657A (ja) 金属パタ−ンの形成方法
JPS63204742A (ja) 半導体装置の製造方法
EP1184909A3 (en) Method of manufacturing an integrated circuit
JPS5994457A (ja) 半導体装置
JPS6130031A (ja) 半導体装置の製造方法
KR20040051670A (ko) 바이폴라 트랜지스터의 제조방법
JPS61100950A (ja) 半導体素子の製造方法
KR20030001908A (ko) 반도체소자의 배선 및 그 형성방법
JPS62247595A (ja) 半導体集積回路装置の製造方法
JPS61174768A (ja) 半導体装置