JPS58114032A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS58114032A
JPS58114032A JP20977281A JP20977281A JPS58114032A JP S58114032 A JPS58114032 A JP S58114032A JP 20977281 A JP20977281 A JP 20977281A JP 20977281 A JP20977281 A JP 20977281A JP S58114032 A JPS58114032 A JP S58114032A
Authority
JP
Japan
Prior art keywords
cross
polymer
resist
development
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20977281A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6358338B2 (enExample
Inventor
Kazuo Toda
和男 戸田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20977281A priority Critical patent/JPS58114032A/ja
Publication of JPS58114032A publication Critical patent/JPS58114032A/ja
Publication of JPS6358338B2 publication Critical patent/JPS6358338B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/008—Azides
    • G03F7/012—Macromolecular azides; Macromolecular additives, e.g. binders
    • G03F7/0125—Macromolecular azides; Macromolecular additives, e.g. binders characterised by the polymeric binder or the macromolecular additives other than the macromolecular azides

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
JP20977281A 1981-12-28 1981-12-28 パタ−ン形成方法 Granted JPS58114032A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20977281A JPS58114032A (ja) 1981-12-28 1981-12-28 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20977281A JPS58114032A (ja) 1981-12-28 1981-12-28 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS58114032A true JPS58114032A (ja) 1983-07-07
JPS6358338B2 JPS6358338B2 (enExample) 1988-11-15

Family

ID=16578348

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20977281A Granted JPS58114032A (ja) 1981-12-28 1981-12-28 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS58114032A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6073536A (ja) * 1983-09-30 1985-04-25 Fujitsu Ltd パタ−ン形成方法
JPS62273529A (ja) * 1986-05-10 1987-11-27 チバ−ガイギ−　アクチエンゲゼル　シヤフト 画像形成方法
JPS63163452A (ja) * 1986-12-17 1988-07-06 チバ−ガイギー　アクチェンゲゼルシャフト 画像形成方法
JP2023153918A (ja) * 2018-08-17 2023-10-18 スター サージカル カンパニー 屈折率のナノ勾配を示すポリマー組成物
US12295829B2 (en) 2021-10-04 2025-05-13 Staar Surgical Company Ophthalmic implants for correcting vision with a tunable optic, and methods of manufacture and use

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6073536A (ja) * 1983-09-30 1985-04-25 Fujitsu Ltd パタ−ン形成方法
JPS62273529A (ja) * 1986-05-10 1987-11-27 チバ−ガイギ−　アクチエンゲゼル　シヤフト 画像形成方法
JPS63163452A (ja) * 1986-12-17 1988-07-06 チバ−ガイギー　アクチェンゲゼルシャフト 画像形成方法
JP2023153918A (ja) * 2018-08-17 2023-10-18 スター サージカル カンパニー 屈折率のナノ勾配を示すポリマー組成物
US12295829B2 (en) 2021-10-04 2025-05-13 Staar Surgical Company Ophthalmic implants for correcting vision with a tunable optic, and methods of manufacture and use

Also Published As

Publication number Publication date
JPS6358338B2 (enExample) 1988-11-15

Similar Documents

Publication Publication Date Title
KR910005884B1 (ko) 패턴형성용 레지스트물질 및 레지스트 패턴의 형성방법
US4600683A (en) Cross-linked polyalkenyl phenol based photoresist compositions
JPS63146038A (ja) 感光性組成物
JPH09110938A (ja) オルガノシリコンの側鎖を含むターポリマーおよびレリーフ構造を作成するためのその使用
JPH08250416A (ja) 陰画調レジスト像の作製方法
JPH0943848A (ja) レジスト材料及びレジストパターンの形成方法
JP4102010B2 (ja) 有機反射防止膜用組成物とその製造方法
JP4527827B2 (ja) フォトレジスト架橋剤、フォトレジスト組成物、フォトレジストパターン形成方法、および半導体素子
US3387976A (en) Photopolymer and lithographic plates
JPS58114032A (ja) パタ−ン形成方法
US6852466B2 (en) Photoresist compositions particularly suitable for short wavelength imaging
US4279984A (en) Positive resist for high energy radiation
CN1094208C (zh) 光敏正作用光敏组合物及其生产方法
JPH05257284A (ja) 放射線感光材料およびそれを用いるパターン形成方法
JPH02248952A (ja) 感光性組成物
EP0030107B1 (en) Process for forming resist pattern
JP2824188B2 (ja) 感光性組成物及びパターンの製造方法
JPH06295064A (ja) 感光性組成物及びパターンの製造方法
JPH0249011A (ja) 高エネルギー線加工用レジスト
KR100367502B1 (ko) 반도체소자의 미세패턴 제조방법
JPH03253858A (ja) パターン形成材料及びパターン形成方法
JPS6032048A (ja) パタ−ン形成方法
JPH09134015A (ja) パタン形成材料，パタン形成方法および半導体素子製造方法
JPS59171948A (ja) 感光性樹脂組成物
JPS58123727A (ja) 半導体装置の製造方法