JPS58114032A - Formation of pattern - Google Patents

Abstract

PURPOSE:To obtain high sensitivity characteristics and to enable development with aq. soln., by using a compsn. consisting of a polymer having phenolic hydroxyl groups on the side chains and an azide cross-linking agent as a positive type electron beam resist. CONSTITUTION:A resist layer is formed by coating a base with a compsn. consisting of a polymer contg. repeating units represented by general formulaI, and a compd. having >=2 azide groups as a cross-linking agent. The resist layer is heated or heated and irradiated with UV rays to cross-link the resist, and then it is exposed to electron beams or the like. The parts irradiated with the beams are decomposed on the main chain or the cross-linking chains, and made soluble in water. Since said polymer is hydroxyl groups, an aq. alkaline soln. is used for development. Since the unexposed parts have cross-linked structure, sensitization development is made possible, sensitivity and resolution are raised without causing swelling.

Description

DETAILED DESCRIPTION OF THE INVENTION (1) Technical details of the invention The present invention relates to a method for forming a /4' turn. The present invention relates to a method for forming turns using a resist consisting of:

(2) Technological background The recent electronic industry, especially in the semiconductor field, has changed from IC to LSI.
Further, as the image pattern reduction is pursued further to ultra-L81, micro/to submicron OI resolution is required.

In response to such requirements, a six-prong electron beam resist using X-rays and electron beams instead of light has been proposed. The inner negative type electron beam sensitive resist of such a resist generally has high sensitivity, but has poor 71 turn characteristics. 10,000, positive type resists generally have low sensitivity, but the putterability of 7% is excellent. Therefore, the tenon type is the main type that is used in the actual semiconductor device manufacturing process,9 and the acrylic resin is the majority among the pono type.

(3) Prior Art and Problems In the conventional method using such resins, dissolution my. ．． When rounding and time development are carried out using the difference, unirradiated areas are also dissolved, that is, the development tolerance is narrow, and a significant decrease in molecular weight is required to produce a significant difference in solubility. Therefore, there are drawbacks such as the need for many irradiation charge covers, that is, low sensitivity. Another disadvantage of conventional type 4 type electron beam sensitive resists is that they are uncrosslinked and have inferior adhesive properties and acid resistance compared to negative type resists.

(4) Object and Structure of the Invention The present invention has been made in order to eliminate such conventional drawbacks, and specifically relates to the following new f di-type solder wire resist in the Rennost-Otano forming method, namely: General formula (I): An electropolymer and a molecular acid containing a repeating unit represented by the formula (in the formula, R#1 represents a methyl, ethyl, or butyl group, and m#il represents 2) are placed on a substrate. di11#shiteregis) J- is formed, this Rennost layer is cross-linked, further irradiated with an electron beam or the like, and then ji
The current value is ilgI.

Examples of the ano#p crosslinking agent in the composition used in the present invention include the following compounds: 4,4'-noanodope/nophenone, 2,6-no(4'-cyanodopendel)-cyclophenone, 2,6 -No (4'-cyanodopendel)
Examples include -4-methylcyclo11Pt and 4,4'-noazidostilpe/. The amount of crosslinking agent used is usually 1 to 50 jiml, preferably <
There are ~20 hours.

The l1ji component consisting of the above polymer and the crosslinking agent is dissolved in a suitable solvent and applied as a photosensitive beam solution onto a substrate.

As a suitable coating solvent, for example, vinegar is Methyl Dragon Rosol!
, methyl ethyl lactone, trimethylformamide, etc. are used. In addition, in the bottle ζν of the present invention, the following general formula (I) is used instead of the 4-rimer expressed in the above ml general formula 1: 1 or 2, and R represents a methyl, ethyl, or methyl group.

A substrate coated with such an electrosensitive adhesive liquid is heated to lOO~200.
C(2) By heating in advance at
After crosslinking the polymer or in advance at 60-100C
After heating, cross-linking is carried out using ultraviolet rays, and then exposure is carried out using Kameko-hiro irradiation. For this exposure, in addition to electron beams, radiant radiation can also be used. When the electron beam is irradiated on the coating prepared in advance, the irradiated part breaks the main structure and breaks the crosslinks, making it soluble in the 9# agent, but the unirradiated part is insoluble in the solvent. It remains in the resist while maintaining the attack practice structure.

As long as the solvent for dissolving the electron beam irradiated portion, ie, the developer, is the uncrosslinked polymer t-#tPs, its product term is not a problem. For example, the intoxicant used in the above-mentioned sensitizer liquid,
Alternatively, a mixture of two or more of them may be used, but since the polymer in the present invention IC has a water-soluble hydroxyl group, an aqueous solution of an inorganic or organic alkali is preferably used as the developer.

For example, an inorganic compound such as KOH or NaOH or a Fuiso ξ compound (trade name: Niji, Gray, MF312→) is used.

A solid image can be produced using such a positive electron beam sensitive composition. Therefore, the sensitivity of the obtained No9 turn increases, and the 111f14
This also improves resolution. Furthermore, since a water-soluble solution is used and there is no need to use a M solvent, it is advantageous in terms of waste disposal and pollution control.

The present invention will now be further illustrated by examples.

(5) Examples of the invention
2XJO) That is, υH chalcone 4,4'-noacytochalcone 10Ji electron was dissolved in methyl cellosolve acetate to prepare an Izo-type electron beam-sensitive composition a4. This composition was coated onto a silico/wafer by a spin-coating method to form a thin film with a thickness of 8,000 mm. After baking this at 150C for 1 hour, the acceleration voltage was 20
A predetermined area was irradiated with an electron beam of kV using a sample-type film X10. Next, the obtained silicon wafer was treated with an aqueous solution of 5 liters of potassium hydroxide. After development, the sensitivity was measured using 9.
I got it.

(6) Effects of the Invention As explained above, the present invention is configured to use an I remer having a phenolic hydroxyl group in a 4-diresist composition, so that it has the effect of being able to be visualized in an aqueous solution at the same time as having commercial flexibility. play.

patent applicant Fujitsu Limited % Pestle agent Patent Attorney W Ki Akira Patent Attorney Kazuyuki Nishi Patent attorney 1) Sachi Masu buryer Akiyuki Yamaguchi -1!

Claims (1)

[Claims] 1. For forming a resist pattern on a substrate 9, the following general formula 1: (In the formula, "R" represents a methyl, ethyl or butyl group, and "Peng" represents 1 or 2.) A renost layer is formed by applying a tenon-temperature-sensitive electron beam composition consisting of a polymer containing a repeating unit energized by a polymer and a compound having two or more at groups in the molecule onto the substrate, and forming a renost layer on the substrate. Layer 11, further dust, then 3jl
The method for forming the above-mentioned turns, using 1 g/l as % mold.