JPS58110038A - パタ−ン形成方法 - Google Patents
パタ−ン形成方法Info
- Publication number
- JPS58110038A JPS58110038A JP56208797A JP20879781A JPS58110038A JP S58110038 A JPS58110038 A JP S58110038A JP 56208797 A JP56208797 A JP 56208797A JP 20879781 A JP20879781 A JP 20879781A JP S58110038 A JPS58110038 A JP S58110038A
- Authority
- JP
- Japan
- Prior art keywords
- resist
- etching
- film
- etched
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000007261 regionalization Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 claims abstract description 31
- 239000000203 mixture Substances 0.000 claims abstract description 10
- 150000001283 organosilanols Chemical class 0.000 claims abstract description 8
- 238000001312 dry etching Methods 0.000 claims abstract description 7
- 238000005530 etching Methods 0.000 claims description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 11
- 238000000576 coating method Methods 0.000 claims description 9
- 239000011248 coating agent Substances 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 7
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 4
- 229910001882 dioxygen Inorganic materials 0.000 claims description 4
- 229920000620 organic polymer Polymers 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 239000008280 blood Substances 0.000 claims description 2
- 210000004369 blood Anatomy 0.000 claims description 2
- 239000002120 nanofilm Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 abstract description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 8
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 abstract description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 abstract description 5
- 230000015572 biosynthetic process Effects 0.000 abstract description 5
- 239000012298 atmosphere Substances 0.000 abstract description 3
- 238000001459 lithography Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 239000003960 organic solvent Substances 0.000 abstract description 3
- ZJBHFQKJEBGFNL-UHFFFAOYSA-N methylsilanetriol Chemical compound C[Si](O)(O)O ZJBHFQKJEBGFNL-UHFFFAOYSA-N 0.000 abstract 1
- 239000002103 nanocoating Substances 0.000 abstract 1
- 238000010894 electron beam technology Methods 0.000 description 8
- 238000000992 sputter etching Methods 0.000 description 7
- 239000004744 fabric Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000011161 development Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229920002189 poly(glycerol 1-O-monomethacrylate) polymer Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 235000015429 Mirabilis expansa Nutrition 0.000 description 1
- 244000294411 Mirabilis expansa Species 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000003158 alcohol group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000002075 main ingredient Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 235000013536 miso Nutrition 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001932 seasonal effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001868 water Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Electron Beam Exposure (AREA)
- Formation Of Insulating Films (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56208797A JPS58110038A (ja) | 1981-12-23 | 1981-12-23 | パタ−ン形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56208797A JPS58110038A (ja) | 1981-12-23 | 1981-12-23 | パタ−ン形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58110038A true JPS58110038A (ja) | 1983-06-30 |
| JPH0542810B2 JPH0542810B2 (enrdf_load_stackoverflow) | 1993-06-29 |
Family
ID=16562271
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56208797A Granted JPS58110038A (ja) | 1981-12-23 | 1981-12-23 | パタ−ン形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58110038A (enrdf_load_stackoverflow) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6125141A (ja) * | 1984-07-16 | 1986-02-04 | Tokyo Denshi Kagaku Kabushiki | パターン形成方法 |
| JPS62291119A (ja) * | 1986-06-11 | 1987-12-17 | Toray Ind Inc | 半導体素子の製造方法 |
| JPS6316623A (ja) * | 1986-07-08 | 1988-01-23 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS63140539A (ja) * | 1986-12-02 | 1988-06-13 | Nec Corp | 半導体装置の製造方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4244799A (en) * | 1978-09-11 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Fabrication of integrated circuits utilizing thick high-resolution patterns |
| JPS5649540A (en) * | 1979-06-21 | 1981-05-06 | Fujitsu Ltd | Semiconductor device |
| JPS5858734A (ja) * | 1981-05-07 | 1983-04-07 | ハネウエル・インコ−ポレ−テツド | 感度の高いポジ電子レジスト映像を発生する方法 |
-
1981
- 1981-12-23 JP JP56208797A patent/JPS58110038A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4244799A (en) * | 1978-09-11 | 1981-01-13 | Bell Telephone Laboratories, Incorporated | Fabrication of integrated circuits utilizing thick high-resolution patterns |
| JPS5649540A (en) * | 1979-06-21 | 1981-05-06 | Fujitsu Ltd | Semiconductor device |
| JPS5858734A (ja) * | 1981-05-07 | 1983-04-07 | ハネウエル・インコ−ポレ−テツド | 感度の高いポジ電子レジスト映像を発生する方法 |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6125141A (ja) * | 1984-07-16 | 1986-02-04 | Tokyo Denshi Kagaku Kabushiki | パターン形成方法 |
| JPS62291119A (ja) * | 1986-06-11 | 1987-12-17 | Toray Ind Inc | 半導体素子の製造方法 |
| JPS6316623A (ja) * | 1986-07-08 | 1988-01-23 | Fujitsu Ltd | 半導体装置の製造方法 |
| JPS63140539A (ja) * | 1986-12-02 | 1988-06-13 | Nec Corp | 半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0542810B2 (enrdf_load_stackoverflow) | 1993-06-29 |
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