JPS5810838A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS5810838A
JPS5810838A JP11013681A JP11013681A JPS5810838A JP S5810838 A JPS5810838 A JP S5810838A JP 11013681 A JP11013681 A JP 11013681A JP 11013681 A JP11013681 A JP 11013681A JP S5810838 A JPS5810838 A JP S5810838A
Authority
JP
Japan
Prior art keywords
layer
wiring
melted
heated
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11013681A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0117252B2 (enrdf_load_stackoverflow
Inventor
Junji Sakurai
桜井　潤治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11013681A priority Critical patent/JPS5810838A/ja
Publication of JPS5810838A publication Critical patent/JPS5810838A/ja
Publication of JPH0117252B2 publication Critical patent/JPH0117252B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP11013681A 1981-07-14 1981-07-14 半導体装置の製造方法 Granted JPS5810838A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11013681A JPS5810838A (ja) 1981-07-14 1981-07-14 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11013681A JPS5810838A (ja) 1981-07-14 1981-07-14 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5810838A true JPS5810838A (ja) 1983-01-21
JPH0117252B2 JPH0117252B2 (enrdf_load_stackoverflow) 1989-03-29

Family

ID=14527934

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11013681A Granted JPS5810838A (ja) 1981-07-14 1981-07-14 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5810838A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60214542A (ja) * 1984-04-10 1985-10-26 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS6269534A (ja) * 1985-09-20 1987-03-30 Nippon Telegr & Teleph Corp <Ntt> 平坦性薄膜の形成方法
JPS63204628A (ja) * 1987-02-19 1988-08-24 Nec Corp 半導体集積回路

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54121082A (en) * 1978-03-13 1979-09-19 Nec Corp Manufacture of semiconductor device
JPS5661144A (en) * 1979-10-25 1981-05-26 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS56142651A (en) * 1980-04-07 1981-11-07 Toshiba Corp Manufacture of semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54121082A (en) * 1978-03-13 1979-09-19 Nec Corp Manufacture of semiconductor device
JPS5661144A (en) * 1979-10-25 1981-05-26 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS56142651A (en) * 1980-04-07 1981-11-07 Toshiba Corp Manufacture of semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60214542A (ja) * 1984-04-10 1985-10-26 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS6269534A (ja) * 1985-09-20 1987-03-30 Nippon Telegr & Teleph Corp <Ntt> 平坦性薄膜の形成方法
JPS63204628A (ja) * 1987-02-19 1988-08-24 Nec Corp 半導体集積回路

Also Published As

Publication number Publication date
JPH0117252B2 (enrdf_load_stackoverflow) 1989-03-29

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