JPS58106848A - 低寄生容量半導体装置およびその製造方法 - Google Patents

低寄生容量半導体装置およびその製造方法

Info

Publication number
JPS58106848A
JPS58106848A JP57213440A JP21344082A JPS58106848A JP S58106848 A JPS58106848 A JP S58106848A JP 57213440 A JP57213440 A JP 57213440A JP 21344082 A JP21344082 A JP 21344082A JP S58106848 A JPS58106848 A JP S58106848A
Authority
JP
Japan
Prior art keywords
semiconductor device
substrate
chip
wafer
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57213440A
Other languages
English (en)
Japanese (ja)
Inventor
ジエ−ン・ビクタ−・ボウベツト
ジエ−ン・ラコムベ
レイモンド・ヘンリ−
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS58106848A publication Critical patent/JPS58106848A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/50—PIN diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/60—Schottky-barrier diodes 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W44/00—Electrical arrangements for controlling or matching impedance
    • H10W44/20—Electrical arrangements for controlling or matching impedance at high-frequency [HF] or radio frequency [RF]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/60—Strap connectors, e.g. thick copper clips for grounding of power devices

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Element Separation (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP57213440A 1981-12-09 1982-12-07 低寄生容量半導体装置およびその製造方法 Pending JPS58106848A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8123027A FR2517884A1 (fr) 1981-12-09 1981-12-09 Dispositif semi-conducteur a faible capacite parasite muni de connexions externes prises au moyen de poutres et procede de fabrication d'un tel dispositif
FR8123027 1981-12-09

Publications (1)

Publication Number Publication Date
JPS58106848A true JPS58106848A (ja) 1983-06-25

Family

ID=9264839

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57213440A Pending JPS58106848A (ja) 1981-12-09 1982-12-07 低寄生容量半導体装置およびその製造方法

Country Status (4)

Country Link
EP (1) EP0081423B1 (enExample)
JP (1) JPS58106848A (enExample)
DE (1) DE3267184D1 (enExample)
FR (1) FR2517884A1 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2536211B1 (fr) * 1982-11-16 1986-02-07 Thomson Csf Structure de diode hyperfrequences dont les connexions exterieures sont prises par deux poutres metalliques
GB2137412B (en) * 1983-03-15 1987-03-04 Standard Telephones Cables Ltd Semiconductor device
FR2561444B1 (fr) * 1984-03-16 1986-09-19 Thomson Csf Dispositif semi-conducteur hyperfrequence a connexions externes prises au moyen de poutres
US4809052A (en) * 1985-05-10 1989-02-28 Hitachi, Ltd. Semiconductor memory device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4180422A (en) * 1969-02-03 1979-12-25 Raytheon Company Method of making semiconductor diodes
GB2067354B (en) * 1980-01-09 1984-04-18 Aei Semiconductors Ltd Mounting for a sc device

Also Published As

Publication number Publication date
FR2517884A1 (fr) 1983-06-10
EP0081423B1 (fr) 1985-10-30
DE3267184D1 (en) 1985-12-05
EP0081423A1 (fr) 1983-06-15
FR2517884B1 (enExample) 1985-05-17

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