JPS58103166A - ２層３階構造の固体カラ−撮像デバイス - Google Patents

２層３階構造の固体カラ−撮像デバイス

Info

Publication number
JPS58103166A
JPS58103166A JP57181483A JP18148382A JPS58103166A JP S58103166 A JPS58103166 A JP S58103166A JP 57181483 A JP57181483 A JP 57181483A JP 18148382 A JP18148382 A JP 18148382A JP S58103166 A JPS58103166 A JP S58103166A
Authority
JP
Japan
Prior art keywords
light
layer
photosensitive
substrate
switching elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP57181483A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6329416B2 (enrdf_load_stackoverflow
Inventor
Masatoshi Tabei
田部井　雅利
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Holdings Corp
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Publication of JPS58103166A publication Critical patent/JPS58103166A/ja
Publication of JPS6329416B2 publication Critical patent/JPS6329416B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/10—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices being sensitive to infrared radiation, visible or ultraviolet radiation, and having no potential barriers, e.g. photoresistors

Landscapes

  • Light Receiving Elements (AREA)
  • Optical Filters (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
JP57181483A 1981-12-15 1982-10-18 ２層３階構造の固体カラ−撮像デバイス Granted JPS58103166A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33092181A 1981-12-15 1981-12-15
US330921 1981-12-15

Publications (2)

Publication Number Publication Date
JPS58103166A true JPS58103166A (ja) 1983-06-20
JPS6329416B2 JPS6329416B2 (enrdf_load_stackoverflow) 1988-06-14

Family

ID=23291880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57181483A Granted JPS58103166A (ja) 1981-12-15 1982-10-18 ２層３階構造の固体カラ−撮像デバイス

Country Status (1)

Country Link
JP (1) JPS58103166A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089968A (ja) * 1983-07-08 1985-05-20 Fuji Photo Film Co Ltd ２層３段構造固体撮像装置
US9735204B2 (en) 2012-06-21 2017-08-15 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device and method for manufacturing the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6089968A (ja) * 1983-07-08 1985-05-20 Fuji Photo Film Co Ltd ２層３段構造固体撮像装置
US9735204B2 (en) 2012-06-21 2017-08-15 Panasonic Intellectual Property Management Co., Ltd. Solid-state imaging device and method for manufacturing the same

Also Published As

Publication number Publication date
JPS6329416B2 (enrdf_load_stackoverflow) 1988-06-14

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