JPS58103166A - Solid-state color image pickup device having double layered, three tiered structure - Google Patents

Abstract

PURPOSE:To obtain the solid-state color image pickup device, which does not require a multicolor filter and generates a distinctive image, and whose manufacturing costs are inexpensive, by providing the structure wherein a plurality of light sensitive layers are laminated on a solid substrate. CONSTITUTION:Light sensitive layers 3 and 4 are laminated on a substrate 2. The layer 3 includes light sensitive elements 26 and 27, and the layer 4 includes light sensitive elements 28 and 29. Each of the elements 26-29 is connected to one MOS element on the substrate 2. Photodiodes 5 and 5' are associated with the MOS elements on the substrate 2. The upper layer 4 detects and absorbs blue light, the second layer 3 detects and absorbs at least green light, and the photodiodes 5 and 5' detect at least red light. By manufacturing the layers 3 and 4 so as to detect and absorb the light, the layers 3 and 4 can operate as a sensor as well as a filter. Therefore, the multicolor filter, which must be arranged in a compound pattern, with capability for detecting different colored lights being maintained, is not required any more.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to solid-state color imaging devices, and more particularly to solid-state color imaging devices that utilize multiple photosensitive layers stacked on a solid substrate to eliminate the need for multicolor filters.

A well-stated goal in the field of solid-state color imaging devices is to create solid-state color imaging devices that are extremely light sensitive and produce sharp images while having low manufacturing costs. A number of different types of solid state imager devices have been created with this goal in mind.

In one example of such an imaging device, arrays of full-color imaging elements are made selectively sensitive to color by a composite array of color filters disposed above the arrays. The highly efficient construction of such filter arrays maximizes the amount of useful information based on human vision about subtle differences in color. Such filter arrays are disclosed, for example, in U.S. Pat. No. 3.9 issued July 20, 1976 to Bayer.
No. 71.065 and U.S. Pat. No. 4.047.203 issued September 6, 1977 to D. However, the resolution inherent in such an array is not only limited by the number of imaging elements that can be placed in the array, but is further limited because only a portion of each element in the array contributes to the fine resolution. The spatial resolution of an array of color imaging elements in such a composite filter is therefore optimized for a particular structure, whereas a monochromatic imaging array of the same number of elements is no better.

English rjif I #IN No. 2,029,642 Oyohi Japanese Patent Publication No. 55-59404, No. 55-277772, 55-
Another structure, proposed and described in No. 277773, 51-95720, is made in which the photosensitive element is superimposed on an information transfer device or solid substrate that can perform the switching function. This substrate is a MO8 switching element or an oon (charge coupled device) switching element. Such a device is covered by British patent @2,029,64
No. 2, the contents of which are described in detail in this specification as reference. Such a structure has potentially higher sensitivity due to the larger photosensitive area than a typical imaging device in which the photosensitive element is placed at the same height as the information transfer device. However, such devices must utilize polychromatic filters, and the reduction in resolution is comparable to the conventional solid-state imaging devices described above. Furthermore, to create such a structure, the color filters must be placed in a specific pattern over the image sensor, which makes alignment and combination of the color filters difficult and, as a result, the fabrication of such devices. However, MI mail is expensive.

Techniques for centering color filters with a vidicon are found in U.S. Pat. No. 5,617,755 to Kado et al. The vidicon includes a conventional conductor layer with a substrate over a number of pn diodes that store electrical signals representative of light intensity. An electron beam scans the PM diode to retrieve video information.

By making the thickness of the semiconductor substrate through which the light reaching the P-n diodes pass through step-like, different wavelengths of light hit the 11n diodes depending on the size of the steps. In this way, different groups of p-n diodes emit light of different colors. can be accumulated. Alternatively, by forming %) 31 diodes at non-uniform depths from the surface,
The thickness of the substrate can be substantially stepped. In another embodiment, solid state scanning can be used instead of electron beam scanning. There, the junction device and MO
Eight elements are utilized for each pixel, and the selective etching of the substrate results in non-uniform distances between the photosensitive surface of the semiconductor substrate and the pixel's bonding device.

The disclosed device is not flattened by a stepped or truncated shape and does not possess the advantages afforded to devices that utilize photoconductors as photoresponsive elements.

Solid state color image sensor arrays have been developed whose potential resolution is equal to that of monochromatic arrays of the same size. Such an image sensor array has a plurality of stacked channels (eg, three channels stacked for a six-color device), each channel having a different spectral response due to different absorption of light by the semiconductor material. (UK PO91 1, Hampshire, Haban F, Honeywell (HazenpmbL・r1Ha
vant%Homsyw@ll)'s Indus) Real
Optunities Inc. (Inaus*real 0p
See Research Publications, August 1978, Vol. 172, Publication No. 17240, entitled "Color-Responsive QOD Imaging Devices," available from Portunities Ltd. ) However, the need to stack three channels requires extremely complex and expensive methods to manufacture such devices. 0
The use of OD (electro-graphic coupling devices) is complex and expensive to manufacture because the channels carrying the information signal must be carefully created under strict constraints. Although it is possible to create a single channel on a substrate, overlaying another channel on top of it is complex and difficult.

Devices such as those described in the aforementioned Publication No. 17240 suggest that it is possible to create a large number of different stacked channels in a silicon crystal that can serve as a stacked multi-channel color imaging device. There is. However, in addition to being expensive and complex to make as mentioned above, the color separation and selectivity of such devices are poor due to the inherent limitations of the materials used. The materials used to make such devices act as oon channels, which in addition to color-selective photosensitive elements must have good single-crystal properties.

As previously mentioned, there is a need in the industry for solid state color imaging devices that are extremely light sensitive and provide sharp image resolution. When using a device in which a polychromatic filter is superimposed on an array of imagers, the resulting image has low resolution and poor resolution, as described in U.S. Pat. In addition to having high selectivity, manufacturing is complicated and expensive due to the necessity of precisely arranging multicolor filters.

Increased selectivity can be achieved by utilizing devices in which a photosensitive element is superimposed on an information transfer device, as described in GB 2,029,642. However, such devices still require the use of multiple multicolor filters, which increases manufacturing complexity and cost, and still have some resolution limitations.

By utilizing a device with a sensor array of multiple superimposed channels, it is possible to obtain a resolution equal to that of a monochromatic array. However, in order to stack six channels on top of each other, complex and expensive manufacturing techniques must be utilized.

The present invention utilizes multiple photosensitive layers stacked on top of each other and on top of the substrate to increase sensitivity. Furthermore, the present invention eliminates the need for polychromatic matching filters since each photosensitive layer detects light of a different color (the device has the same resolution as that of a monochromatic array of the same size). , and can be manufactured using simple and common inexpensive technology.

The present invention provides a solid state color imaging device that can be manufactured using simple, inexpensive and conventional techniques such as conventional vacuum deposition techniques and sputtering techniques. This device is extremely sensitive to light and produces images with desirably high resolution given the characteristics of the human eye. ! The light detection area of the majority of trixed individual skin color elements is larger than the area of the corresponding element of an imaging device using a single photoconductive layer with a polychromatic filter. The image resolution is also comparable to that of conventional monochromatic solid-state imaging devices with the same number of elements.

The device according to the invention includes a solid-state substrate for handling charge, and a photosensitive element is also present on this substrate. A plurality of photosensitive layers are superimposed on the substrate for absorbing and detecting light. Solid-state substrates can be used for charge-coupled devices (OOD) and M0
Any type of two-dimensional information device such as 8 switching elements may be used.

The substrate performs switching and transfer functions in conjunction with the photosensitive layer and the photosensitive elements of the substrate itself. Each of the photosensitive layers superimposed on the substrate has an upper continuous transparent electrode layer;
It consists of a mozzier-like pattern of back electrodes and three non-deposits, including a photosensitive layer located between them. The back electrodes of each layer are electrically connected to the solid substrate, such as the source and drain terminals of the MOB%OOD or other switching elements, such as the photosensitive elements on the substrate. Each of the photosensitive layers is electrically isolated from the other layers and from the solid substrate at all points except through electrical connections.

A primary object of the present invention is to provide a solid state color imaging device consisting of a solid state substrate containing a photosensitive element and having a plurality of photosensitive layers, the photosensitive layers each including a photosensitive element of the substrate and a 11tgIL at a terminal of the substrate. The photosensitive layers arranged in each layer are sequentially sensitive to a wider band of light and absorb this light. It allows the photosensitive elements of the substrate to detect only the light that has passed through the layer above.

Another object of the invention is to provide a solid state color imaging device that can be manufactured without the need for multicolor filters.

Yet another object of the invention is to provide a solid state imager device that is highly sensitive to light.

Yet another object of the invention is to provide a solid state color imaging device capable of producing images with high resolution.

Yet another object of the invention is to provide a solid state color imaging device that is simple and inexpensive to manufacture.

The foregoing and other objects and advantages of the invention will be found in the details of construction hereinafter described in detail with reference to the accompanying drawings in which like numerals indicate like parts throughout and which form a part of this specification. Those skilled in the art will understand how to use it.

Before describing embodiments of solid state color imaging devices of the present invention, it should be understood that the present invention is not limited to the particular arrangement of components illustrated, as modifications may be made to such devices. It is.

Further, the terms used in this specification are used to describe specific embodiments, and are not used in a limiting sense.

Referring now to Figure 1, a conventional solid state color imaging device of the type having a photosensitive element superimposed on a substrate is shown. Figure fs1 is an exploded perspective view of a conventional solid state cuff-imaging device. Substrate 2 has photosensitive J! #6 is overlapped. The substrate 2 includes a large number of MOIiX Itinda elements 6.
．． 7.8, 9.10.11 included. FIG. 1 shows only a portion of what such an imaging device would include. In fact, an imaging device contains several thousand MOJI elements.
Elements 6.7.8.9.10.11 are used for various switching and transfer functions, for example in connection with the red, green, blue, blue, red and edge parties, respectively. Element 6-11
each includes a source terminal 12 and a drain terminal 13.

The photosensitive layer 3 consists of three non-adhesive layers, which will be described later. All of the bottom defects or mosaic electrodes on the back of the bottom, the innermost defects of layer 3, are electrically connected to elements 6-11. Overlaid on the photosensitive layer 3 are elements 6 and 7, respectively.
．． Filter element 14 corresponding to 8.9.10.11.
15.16.17.18.19. Filter elements 14-19 are used to prevent all light except monochromatic light from passing through. Thus, for example, corresponding to the switching and transfer functions of the aforementioned elements 6-11, filter element 14 is used to prevent the transmission of all light except red light, and filter element 15 is used to prevent the transmission of green light. Filter 16 allows no light to pass through except! Prevents all light from passing through except colored light.

Since the photosensitive function within layer 3 is distinguished from the switching and transfer functions within the substrate 2, the device shown in Figure 1 is such that the photosensitive function is performed at the same level as the switching and transfer functions. It is much more sensitive to light than conventional devices. However, the device shown in FIG.
The manufacture of this device is somewhat expensive as it requires the use of -19 and such filter elements require precise placement. The filter elements 14-19 are
Photosensitive parts 2 each formed by a back electrode
Before the light reaches 0.21.22.23.24.25,
Light is used to tell fortunes.

The combination of each Mol element 6-11, photosensitive portion 20-25 and fill Jl-14-19 forms what is known in the art as a pixel. Therefore, the device portion shown in FIG. 1 represents 6-pixels. The present invention makes it possible to manufacture a device using a substrate 2 of the same size, including six pixels or two sets of pixels, as described below, while eliminating the need for a multicolor filter.

Referring now to FIG. 2, there is shown an exploded perspective view of a device according to the present invention. The imaging device includes a substrate 2 on which a Mol element 6.7.8.9.10.11 is disposed. The photosensitive layers 6 and 4 are superimposed on the substrate 2. Each layer 5 and 4 consists of layers which need not be described in further detail in connection with FIG. Photodiodes 5 and 5' are arranged on substrate 2 in association with MO8 elements 7 and 10, respectively.

2, which, like FIG. 1, shows only a small portion of an imaging device consisting of thousands of identical parts, 0 layers 3 and 4 and photodiodes 1' 5 ! :
By arranging 5' as shown in FIG. 2, it is possible to detect distinct color bands of light without using polychromatic filters as shown in FIG.

Layer 5 includes four photosensitive elements 26 and 27, and layer 4 includes photosensitive elements 28 and 29. Each of elements 26-29 is connected to substrate 20M.
connected to one of the O8 elements, each with 7 oscidiodes 5 and 5
' is associated with the MOII element on the substrate 2. Element 26
and 28 are stacked on top of each other like elements 27 and 29,
Layers 6 and 4 cover all photodiodes on substrate 2.

It will be easier to understand the invention if layers 3 and 4 consist of photosensitive elements 28, 29, etc. In each layer, except for the upper electrode hole and the part where the photoconductive element passes through the hole, it will be easier to understand the invention. It should be understood that it is preferable to apply the coating in successive layers. The bottom mosaic of electrodes is not continuous, but forms the boundaries of each photosensitive element. Each of layers 3 and 4 not only detects a given color of light, but also absorbs that color.

Thus, two colors, for example blue and green, are detected and absorbed, and a single color, for example red, impinges on elements 5 and 5'.

Elements 26 and 28 are connected to Mol elements 9 and 6, respectively. Mol elements 9 and 6, photosensitive element 26 on substrate 2
and 28, and the photodiode 5' associated with the MOJI element 10 on the substrate 2 constitute a so-called set of pixels. Two sets of pixels are shown in FIG. Each set of pixels can detect three separate colors of light. The MO8 elements are arranged in an L-shaped pattern in FIG. However, the MO8 element can be formed into arbitrary pieces 111., such as a linear pattern or a rectangular pattern. They can be arranged in different patterns and connected to the back electrode in a variety of different ways.

Element 28 is arranged! 45 to the substrate 2, and the element 2
6 is connected to the substrate 2 via a wiring 44.

Next, the third plane, which is the plane surface of the longitudinal section of the imaging device of the present invention, is
Layers 3 and 4 will be described in detail with reference to wi. As already pointed out, each of the photosensitive layers 3 and 4 consists of six layers. Layer 3 contains unnecessary 32.33.64, layer 4 contains unnecessary 3
5.36.37 included.

Layer 3 is insulated from substrate 2 by a layer 41 of insulating material. Layer 3 is insulated from layer 4 by a layer 42 of insulating material. Thus, each of layers 3 and 4 is electrically bonded to each other and insulated from substrate 2 at all points except via electrical traces 44 and 45.

The photosensitive layer 3 includes transparent electrode dots #34 at the top and opaque electrode dots 32 shaped like mozzles at the bottom. No need for photosensitive materials33
is located between unnecessary 32 and 34. Layer 4 includes similar components as layer 3. No need for mozuita-shaped electrode at the bottom 32
and 35 should be transparent; furthermore, each of layers 3 and 4 should be capable of reacting to and absorbing light of a different color, as described in detail in connection with Figures 5-50. It is made in

By making the device as shown in Figures 112 and 3, it is possible to eliminate the need for an array of composite multicolor filters. More specifically, a device according to the present invention is shown in FIG.
．． The Debye λ according to the present invention does not require a filter array structure such as that disclosed in '065 or U.S. Pat. No. 4,047,203.
Since no multicolor catheter filters are required, the device according to the invention can be manufactured relatively easily at relatively low cost.

Although the device according to the invention can operate without the need for any filters, the outermost photosensitive layer 4
It is possible to use one broadband filter superimposed on top of the filter. Such a filter is 4000λ
It can be designed to predict the fortunes of light that is invisible to the human eye, such as light having a wavelength of 77,002 or more, ie, ultraviolet light or infrared light.

Referring now to FIG. 4, a perspective view of an imaging device according to the present invention can be seen. The light impinges on the top surface of the outermost layer 4, as shown in FIG. As will be explained in more detail below, part of this light is absorbed by layer 4 and the remaining light hits layer 3 where further light is absorbed,
The remaining light hits substrate 2. Photodiode 5 and 5'
As is well known, the MO8 element 7 is placed on the substrate 2.
and 10. Prior to the development of stacked photosensitive layer structures as shown in FIG. 1, arrays of photodiode elements such as 5 and 5' were used as the sole light detection means. As previously mentioned, such structures were less sensitive to light due to the small size of the photodiodes, and such structures also required the use of polychromatic filter arrays.

The operation of the imaging device of the present invention will be described in detail with reference to FIG. 5 in combination with FIGS. 5m-5a.

FIG. 5 is a longitudinal cross-sectional view of the same device as shown in FIG. 6, but is simplified so that unnecessary parts are not shown. 5as5” and 5, respectively,
2 is a graph booting both absorption versus wavelength and photoconductivity versus wavelength for the light detected by photodiodes 5 and 5' on top of substrate 2 plus the light absorbed and detected inside layers 3 and 4; .

When layer 4 is exposed to light in the wavelength range to which layer 4 responds, the resistance of photoconductive element 36 (see FIG. 3) is reduced by the specific element 28 (second
(see figure). This reduced resistance can be detected and recorded electrically by utilizing the electrodeless 67 and 35 in conjunction with the Mol element 6 inside the substrate 2. The particular method of recording the reduction in electrical resistance performed in conjunction with the detection of light is not part of this invention and is well known.

This reduced resistance represents the intensity of the blue light striking the elements 28 of layer 4 (see Figure 5). Furthermore, layer 4 absorbs light only in the blue region, as shown by the absorption curves in Figures 5&. The light that has passed through layer 4 contains only the green and red parts of the Spetasil 6.Layer 4 absorbs all the light with a wavelength of 5oooi or less, allowing the rest of this light to reach layer 6. . Furthermore, layer 4 is 5oooZ
Sensitive to light with wavelengths above or below.

When light in the wavelength range to which the layer 3 reacts hits the layer 3, the resistance of the non-photosensitive element 33 (see FIG. 3) decreases in the element 26 (see 2nd wi. 11). The reduced resistance changes the current as described above. Therefore, the green light hitting the photosensitive element 26 is Mo
It can be detected in relation to the l element 9. Layer 3 also absorbs light in the green region, as shown by the absorption curve for layer 3. The material inside layer 3 actually absorbs blue and green light, but the blue light has been absorbed or filtered by layer 4. Thus, the combination of layers 6 and 4 filters out all blue and green light, allowing only red light to pass through. Layer 4 filters light having a wavelength of 6000° or less and is sensitive to light having a wavelength of 6000° or less. However, since light with a wavelength of 5000A or less is filtered by layer 4, layer 3 contains light with a wavelength between 5000A and 6oooX;
ie, green light, and the layer 3 responds to this light.

As shown in 5s[, the substrate 207 otodiodes 5 and 5 absorb all visible light and are more or less sensitive to all visible light. However, the Aoshi diode elements 5 and 5' are most sensitive to the light in the red part of the Svettle. As already explained, layer 4 has already absorbed blue light and layer 3 has already absorbed green light. Therefore, since only red light hits the substrate 2, the elements 5 and 5' are hit by the red light. When red light strikes elements 5 and 5', the current changes in such a way that the light can be detected by electrical impulses.

By utilizing layers 6 and 4 and elements 5 and 5' with specific absorption capacities and photoconductivity as described above, it is possible to precisely detect the light falling on any particular area of the imaging device and to determine the wavelength and thus the It is possible to determine the color of the light that falls on that area.

The intensity of light striking any part of the layer or any photosensitive element can also be measured by the degree of change in resistance. Layers 3 and 4 are made in such a way that small variations in resistance can be measured, so that the relative intensity of light of any particular wavelength striking any particular element of the photosensitive layer can be determined by electronic means in relation to substrate 2. Can be detected and recorded.

The color imaging devices disclosed herein can be manufactured in a variety of different embodiments. Although no structural details are given, the imaging array can be manufactured as shown in the aforementioned British patent. However, modifications are required to provide two photosensitive layers and ports for connecting the bottom electrode of each photosensitive layer to the Mo1I element on the semiconductor substrate. Furthermore, the substrate 2 must have certain photosensitive elements, such as photodiodes 5 and 5', the structure and arrangement of such photosensitive elements being well known.

The embodiment shown in Figures 2.6.4 and 5 and described in connection with Figure 51-5 is considered the preferred embodiment of the invention. The top layer 4 detects and absorbs blue light, and the second layer 3
detects and absorbs at least green light, and photodiodes 5 and 5' detect at least red light. By manufacturing layers 3 and 4 to be able to detect and absorb light, layers 3 and 4 act both as sensors and as filters. Thus, the ability to detect light of different colors is retained, while eliminating the need for multicolor filters that must be arranged in a complex array.

The device shown in FIG. 5 and described in connection with FIG. 51-5 can be manufactured in a variety of ways to achieve different end results. When manufacturing a device intended to work in this manner, the material within each of the photosensitive layers, as well as the insulating material within the insulating layer, must be manufactured in a specific manner.

The insulating material inside layers 41 and 42 is 810jl.

! Choose from a number of electrical insulating materials such as If5ml, polyimide, laryamide, photocurable resins or other known organic polymers.

The topmost photosensitive layer 4 is sensitive to blue light and is made of a material selected from the group consisting of 0118, 0dLB and NxB. Layer 3, which is sensitive to both blue and green light and absorbs both, but only absorbs green light as the blue light is filtered by layer 4, is made of amorphous selenium, OaS.
or ()aAsν. Photodiodes 5 and 5
' is sensitive to blue, green, and red light and absorbs light of all colors.

The photodiodes detect only red light since the blue and green light have been filtered by layers 3 and 4. Photodiodes 5 and 5' are manufactured in the usual way and are made of Ga
Mu1mu-1G&A@P%Ne.

d!・,0IIT・, made of a material selected from the group consisting of amorphous hydrogen silicide.

Depending on the particular type of photosensitive layer and element utilized and how the device is used, the voltages that affect the operation of the device can be utilized. Additionally, different voltages may be utilized in conjunction with each of the photosensitive layers or elements depending on the particular result desired.

A solid state color imaging device according to the present invention has been described in what is considered the most practical and preferred embodiment.

References to specific materials, specific terminology, and specific sensitivities of the photosensitive layer to specific wavelengths or colors of light are made solely to disclose preferred embodiments and are within the scope of the present invention. It is recognized that modifications may be made to such embodiments and changes may occur that occur to those skilled in the art upon reading the embodiments.

[Brief explanation of the drawing]

1M is an exploded perspective view of a conventional solid-state color imaging device showing a photoconductive layer overlaid on a substrate; FIG. 2 is a two-layer 35
FIG. 6 is a vertical sectional view of the solid-state color imaging device of Minato's invention, FIG. 4 is a schematic perspective view of the solid-state color imaging device of the invention, and FIG. The figure is a longitudinal sectional view of the solid-state color imaging device of the present invention, and Figures 5&, 5b and 50 are the outermost layer and second layer 7 of the solid-state color imaging device of the present invention, respectively. 2 - Substrate 3.4 - Photosensitive layer 515'7 Otodiode 26.27, 28.29 - Photosensitive element 32.33, 34.35, 56.37 - Seasonal layer (other 3
5,6 @111 1211 31st m 4th Seki 5th l

Claims (1)

Claims: a) a solid substrate comprising an array of electrical switching elements;
a layer of insulating material disposed over the substrate, a photosensitive layer of $1 overlying the layer of insulating material, a layer of insulating material disposed over the first photosensitive layer, and the insulating material. a second photosensitive element overlaid on a layer of material, on said substrate a first number of said IIT switching elements and a second number of said IIF photodiode elements are associated therewith;
The photosensitive layer consists of a transparent electrode on the top, a transparent mozzle-like electrode on the back, and a photoconductive layer disposed between the top sublayer and the back sublayer, and the back a mosaic of electrodes is divided into an array of portions corresponding to the electrical switching elements of a second contact on the substrate;
The divided portions on the back that do not require mozzier-shaped electrodes are electrically connected to the second plurality of electrical switching elements on the substrate, and the second portions that do not require photosensitive electrodes do not require transparent electrodes on the upper part. , no need for transparent mosaic electrodes on the back.
and a photoconductive layer disposed between the top sublayer and the back sublayer, and these back mosaic electrodes are the 50th*i photoconductive layer on the substrate of the #11 photosensitive layer.
The back mosaic electrode is electrically connected to the sixth plurality of electrical switching elements on the substrate, and the photosensitive element of fIN1 is divided into an array of parts corresponding to the electrical switching elements of fIN1. layer and said second photosensitive layer are sensitive to and absorb different ranges of the visible wavelength spectrum, thereby causing said first photosensitive layer and said second photosensitive layer to absorb in this range.
A color imaging device characterized in that the electrical signals from the photosensitive layer represent light intensities in two different color ranges, and the photodiode elements on the substrate represent light intensities in a 60-color range. -) consisting of a solid substrate consisting of a number of electrical switching elements arranged in six sets and two vertically arranged photosensitive layers superimposed on each other on said substrate having photosensitive elements on a part of the surface; Each of the photosensitive layers consists of a top transparent electrode, a back transparent mosaic electrode, and a photoconductive layer disposed between the top sublayer and the back sublayer; Each of the fall layers is divided into respective parts of an array in which the back mosaic fall layer part of each of said photosensitive layers is electrically connected to a corresponding one of said three sets of 1ti switching elements, thus The back mosaic fall layer portion vertically disposed on each of the two photosensitive layers is integrated into one of the electrical switching elements of each of six sets, and the photosensitive elements of the substrate are also integrated into six sets. in association with a corresponding element of each set of said electrical switching elements to form an array of multiple sets of pixels, said photosensitive layer and said photosensitive elements of said substrate being sensitive to and absorbing different ranges of the visible wavelength spectrum. a solid-state imaging device, whereby electrical signals received from each of the photosensitive elements of the photosensitive layer and the substrate represent light intensities of three distinct color ranges. Q) the photoconductive layer and the photosensitive element are manufactured and arranged such that each layer in sequence in the direction toward the substrate has wavelength-to-absorption characteristics such that the layer absorbs a wider band in the order of the light spectrum; A solid-state color imaging device according to claim 1 or 2, characterized in that: ←) said second photoconductive layer is sensitive to and absorbs light in the blue region of the optical spectrum; said first photosensitive layer is not sensitive to light in the red region of the optical spectrum, but at least absorbs light in the green region; Solid state color imaging device according to claim 1, characterized in that the photosensitive elements of the substrate are sensitive to light in at least the red region of the light spectrum. The two photosensitive layers are farthest from the substrate and are sensitive to light in the blue region of the optical spectrum, and the outermost layer, which absorbs this light, is not sensitive to light in the red region of the light spectrum. comprises a layer that is sensitive to at least light in the green region and absorbs this light, and the photodiode element of the substrate is sensitive to light in the red region (and is sensitive to light in the red region). The solid-state color imaging device according to claim 2. (6) The solid-state color according to claim 1 or 2, wherein the electric switcher element arranged on the substrate is an MO8 device. Imaging device.) The second exposure is not required.
B. The first photosensitive layer comprises amorphous selenium, 048.
Photosensitive qIkJ selected from the group consisting of GaAsF
112. An image color imaging device according to claim 111, characterized in that the image body color imaging device is made of a solid color. (8) a semiconductor switching matrix comprising a matrix of charge switching elements; a first plurality of photoconductors responsive to and absorbing light in a relatively low band of the visible spectrum; at least the first plurality of photoconductors; A first plurality of said charge switching elements are associated with an equal number of photodiodes, said first plurality of photoconductors responsive to and absorbing a high band of light on said conductor; ml of the charge switching elements respectively transmit an electrical signal to each of the second plurality of charge switching elements for transmitting to the charge switching elements an electrical signal representative of the intensity of light to which the eleven plurality of photoconductors respond. each of the second plurality of photoconductors is connected to a fifth photoconductor for transmitting an electrical signal to the charge switching element representative of the intensity of light upon which the second n photoconductors react. electrically connected to the plurality of charge switching elements, the eleven plurality of photoconductors, the ts2 plurality of photoconductors and the semiconductor switching matrix comprising three stacked layers of a solid state imaging device; And these 6
two layers in which light impinging on the solid-state imaging device first impinges on the first plurality of photoconductors, and that the light at a wavelength that is not absorbed thereby impinges on the second plurality of photoconductors and is not absorbed thereby; The structure is superimposed such that light of the same wavelength strikes the photodiode, thereby causing the first, second and #I3 wavelengths to fall on the photodiode. A solid-state imaging device characterized in that M number of charge switching elements each represent light intensities in five distinct bands. (9) each of said first and second plurality of photoconductors comprises a layer of photoconductor material having a top electrode and a bottom electrode; Jl body
The solid-state imaging device according to claim 8, characterized in that it comprises: