JPS58102560A - 薄膜トランジスタの製造方法 - Google Patents

薄膜トランジスタの製造方法

Info

Publication number
JPS58102560A
JPS58102560A JP56201227A JP20122781A JPS58102560A JP S58102560 A JPS58102560 A JP S58102560A JP 56201227 A JP56201227 A JP 56201227A JP 20122781 A JP20122781 A JP 20122781A JP S58102560 A JPS58102560 A JP S58102560A
Authority
JP
Japan
Prior art keywords
film
sio2
thin film
film transistor
raw material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56201227A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0547981B2 (OSRAM
Inventor
Toshiro Kodama
敏郎 児玉
Satoru Kawai
悟 川井
Nobuyoshi Takagi
高城　信義
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56201227A priority Critical patent/JPS58102560A/ja
Publication of JPS58102560A publication Critical patent/JPS58102560A/ja
Publication of JPH0547981B2 publication Critical patent/JPH0547981B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6746—Amorphous silicon

Landscapes

  • Thin Film Transistor (AREA)
JP56201227A 1981-12-14 1981-12-14 薄膜トランジスタの製造方法 Granted JPS58102560A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56201227A JPS58102560A (ja) 1981-12-14 1981-12-14 薄膜トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56201227A JPS58102560A (ja) 1981-12-14 1981-12-14 薄膜トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS58102560A true JPS58102560A (ja) 1983-06-18
JPH0547981B2 JPH0547981B2 (OSRAM) 1993-07-20

Family

ID=16437436

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56201227A Granted JPS58102560A (ja) 1981-12-14 1981-12-14 薄膜トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS58102560A (OSRAM)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60261174A (ja) * 1984-06-07 1985-12-24 Nippon Soken Inc マトリツクスアレ−
JPS6481310A (en) * 1987-09-24 1989-03-27 Fuji Electric Co Ltd Growth method of amorphous silicon thin film
JPH01303716A (ja) * 1988-05-31 1989-12-07 Agency Of Ind Science & Technol 薄膜形成方法
US5120667A (en) * 1990-05-17 1992-06-09 Sharp Kabushiki Kaisha Process for fabricating a thin film transistor
US5693541A (en) * 1994-08-26 1997-12-02 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing a semiconductor device using a silicon nitride mask
US6337229B1 (en) * 1994-12-16 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of making crystal silicon semiconductor and thin film transistor

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10276284A (ja) * 1997-03-27 1998-10-13 Ricoh Co Ltd ファクシミリ装置
JP2007311915A (ja) * 2006-05-16 2007-11-29 Ricoh Co Ltd 画像読取システム、画像読取方法、およびその方法をコンピュータに実行させるプログラム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10276284A (ja) * 1997-03-27 1998-10-13 Ricoh Co Ltd ファクシミリ装置
JP2007311915A (ja) * 2006-05-16 2007-11-29 Ricoh Co Ltd 画像読取システム、画像読取方法、およびその方法をコンピュータに実行させるプログラム

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60261174A (ja) * 1984-06-07 1985-12-24 Nippon Soken Inc マトリツクスアレ−
JPS6481310A (en) * 1987-09-24 1989-03-27 Fuji Electric Co Ltd Growth method of amorphous silicon thin film
JPH01303716A (ja) * 1988-05-31 1989-12-07 Agency Of Ind Science & Technol 薄膜形成方法
US5120667A (en) * 1990-05-17 1992-06-09 Sharp Kabushiki Kaisha Process for fabricating a thin film transistor
US5693541A (en) * 1994-08-26 1997-12-02 Semiconductor Energy Laboratory Co., Ltd Method for manufacturing a semiconductor device using a silicon nitride mask
US6337229B1 (en) * 1994-12-16 2002-01-08 Semiconductor Energy Laboratory Co., Ltd. Method of making crystal silicon semiconductor and thin film transistor

Also Published As

Publication number Publication date
JPH0547981B2 (OSRAM) 1993-07-20

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