JPS58100683A - プラズマエツチング方法 - Google Patents

プラズマエツチング方法

Info

Publication number
JPS58100683A
JPS58100683A JP19949281A JP19949281A JPS58100683A JP S58100683 A JPS58100683 A JP S58100683A JP 19949281 A JP19949281 A JP 19949281A JP 19949281 A JP19949281 A JP 19949281A JP S58100683 A JPS58100683 A JP S58100683A
Authority
JP
Japan
Prior art keywords
etching
gas
plasma
etched
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19949281A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0121230B2 (en:Method
Inventor
Masakatsu Kimizuka
君塚　正勝
Kazuo Hirata
一雄 平田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP19949281A priority Critical patent/JPS58100683A/ja
Publication of JPS58100683A publication Critical patent/JPS58100683A/ja
Publication of JPH0121230B2 publication Critical patent/JPH0121230B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)
JP19949281A 1981-12-12 1981-12-12 プラズマエツチング方法 Granted JPS58100683A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19949281A JPS58100683A (ja) 1981-12-12 1981-12-12 プラズマエツチング方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19949281A JPS58100683A (ja) 1981-12-12 1981-12-12 プラズマエツチング方法

Publications (2)

Publication Number Publication Date
JPS58100683A true JPS58100683A (ja) 1983-06-15
JPH0121230B2 JPH0121230B2 (en:Method) 1989-04-20

Family

ID=16408708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19949281A Granted JPS58100683A (ja) 1981-12-12 1981-12-12 プラズマエツチング方法

Country Status (1)

Country Link
JP (1) JPS58100683A (en:Method)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043829A (ja) * 1983-08-19 1985-03-08 Anelva Corp ドライエッチング方法
JPS60165725A (ja) * 1984-02-08 1985-08-28 Toshiba Corp ドライエツチング方法
JPS6126225A (ja) * 1984-07-06 1986-02-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 反応性イオン・エツチング方法
JPS6191928A (ja) * 1984-10-11 1986-05-10 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6252932A (ja) * 1985-08-27 1987-03-07 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション プラズマ・エツチング方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154582A (en) * 1979-05-21 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching method
JPS5658972A (en) * 1979-10-16 1981-05-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching method
JPS5681678A (en) * 1979-12-05 1981-07-03 Toshiba Corp Method and apparatus for plasma etching

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55154582A (en) * 1979-05-21 1980-12-02 Chiyou Lsi Gijutsu Kenkyu Kumiai Gas plasma etching method
JPS5658972A (en) * 1979-10-16 1981-05-22 Chiyou Lsi Gijutsu Kenkyu Kumiai Dry etching method
JPS5681678A (en) * 1979-12-05 1981-07-03 Toshiba Corp Method and apparatus for plasma etching

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6043829A (ja) * 1983-08-19 1985-03-08 Anelva Corp ドライエッチング方法
JPS60165725A (ja) * 1984-02-08 1985-08-28 Toshiba Corp ドライエツチング方法
JPS6126225A (ja) * 1984-07-06 1986-02-05 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 反応性イオン・エツチング方法
JPS6191928A (ja) * 1984-10-11 1986-05-10 Mitsubishi Electric Corp 半導体装置の製造方法
JPS6252932A (ja) * 1985-08-27 1987-03-07 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション プラズマ・エツチング方法

Also Published As

Publication number Publication date
JPH0121230B2 (en:Method) 1989-04-20

Similar Documents

Publication Publication Date Title
CA1172993A (en) Microwave plasma etching
KR100361399B1 (ko) 기판의이방성플라즈마에칭방법및그방법에의해제조되는전자부품
KR970000417B1 (ko) 드라이 에칭방법 및 드라이 에칭장치
US5880036A (en) Method for enhancing oxide to nitride selectivity through the use of independent heat control
US4473435A (en) Plasma etchant mixture
US4615764A (en) SF6/nitriding gas/oxidizer plasma etch system
US5336365A (en) Polysilicon etching method
US4174251A (en) Method of selective gas etching on a silicon nitride layer
WO1999016110A2 (en) Plasma process for selectively etching oxide using fluoropropane or fluoropropylene
JPH04326726A (ja) ドライエッチング方法
US6136722A (en) Plasma etching method for forming hole in masked silicon dioxide
WO1995002076A1 (en) Method for forming thin film
WO2003056617A1 (en) Etching method and plasma etching device
KR900003804B1 (ko) 단결정 실리콘의 디프 트렌치 에칭
KR102765856B1 (ko) 드라이 에칭 방법 및 반도체 디바이스의 제조 방법
JP3559691B2 (ja) 半導体装置の製造方法
JPS58100683A (ja) プラズマエツチング方法
JPS58204537A (ja) プラズマエツチング方法
JP3094470B2 (ja) ドライエッチング方法
JPH04233731A (ja) 集積回路用の可溶性酸化物
US4554047A (en) Downstream apparatus and technique
US7964511B2 (en) Plasma ashing method
JPWO2003017343A1 (ja) ドライ現像方法
KR102697865B1 (ko) 플라즈마 식각 방법
JPH0363209B2 (en:Method)