JPS5798961A - Photodiode for detecting index light signal in beam index type color television receiver - Google Patents
Photodiode for detecting index light signal in beam index type color television receiverInfo
- Publication number
- JPS5798961A JPS5798961A JP55175331A JP17533180A JPS5798961A JP S5798961 A JPS5798961 A JP S5798961A JP 55175331 A JP55175331 A JP 55175331A JP 17533180 A JP17533180 A JP 17533180A JP S5798961 A JPS5798961 A JP S5798961A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- phosphor material
- photodiode
- light signal
- index
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/34—Luminescent screens provided with permanent marks or references
Abstract
PURPOSE:To improve the quantum conversion efficiency by employing a silicon having P<+>P<->N<-> structure where the superficial P<+> layer is thinner than 0.1mu while employing a layer formed through the epitaxial growth having the resistivity higher than 10OMEGAcm as the intermediate P<-> layer. CONSTITUTION:Three elementary color phosphor material and an index phosphor material 4 having short light residue are arranged on a face plate 1a, then it is sweeped by the electrobeam 6 from single electron gun 5 to detect the light signal 7 from a phosphor material 4 by a photodiode 9 and to impinge against predetermined phosphor material. Here P<-> layer 17 is epitaxially grown on a N<-> substrate 16 then P<+> layer 20 thinner than 0.1mu is formed through the ion injection while furthermore a reflection preventing film 22 is formed. Consequently the crystality of P<-> layer 17 is improved and the arrival of the carrier to the electrode 24 is facilitated thereby the sensibility for the index light of th wave length in the order of 300-600nm can be improved.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175331A JPS5798961A (en) | 1980-12-11 | 1980-12-11 | Photodiode for detecting index light signal in beam index type color television receiver |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55175331A JPS5798961A (en) | 1980-12-11 | 1980-12-11 | Photodiode for detecting index light signal in beam index type color television receiver |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5798961A true JPS5798961A (en) | 1982-06-19 |
Family
ID=15994197
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55175331A Pending JPS5798961A (en) | 1980-12-11 | 1980-12-11 | Photodiode for detecting index light signal in beam index type color television receiver |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5798961A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293613A (en) * | 1986-06-12 | 1987-12-21 | Fuji Electric Co Ltd | Manufacture of semiconductor radiation detecting element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326593A (en) * | 1976-08-23 | 1978-03-11 | Ibm | Photodiode device |
-
1980
- 1980-12-11 JP JP55175331A patent/JPS5798961A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5326593A (en) * | 1976-08-23 | 1978-03-11 | Ibm | Photodiode device |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62293613A (en) * | 1986-06-12 | 1987-12-21 | Fuji Electric Co Ltd | Manufacture of semiconductor radiation detecting element |
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