JPS5798961A - Photodiode for detecting index light signal in beam index type color television receiver - Google Patents

Photodiode for detecting index light signal in beam index type color television receiver

Info

Publication number
JPS5798961A
JPS5798961A JP55175331A JP17533180A JPS5798961A JP S5798961 A JPS5798961 A JP S5798961A JP 55175331 A JP55175331 A JP 55175331A JP 17533180 A JP17533180 A JP 17533180A JP S5798961 A JPS5798961 A JP S5798961A
Authority
JP
Japan
Prior art keywords
layer
phosphor material
photodiode
light signal
index
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55175331A
Other languages
Japanese (ja)
Inventor
Kunihiko Takahama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP55175331A priority Critical patent/JPS5798961A/en
Publication of JPS5798961A publication Critical patent/JPS5798961A/en
Pending legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/18Luminescent screens
    • H01J29/34Luminescent screens provided with permanent marks or references

Abstract

PURPOSE:To improve the quantum conversion efficiency by employing a silicon having P<+>P<->N<-> structure where the superficial P<+> layer is thinner than 0.1mu while employing a layer formed through the epitaxial growth having the resistivity higher than 10OMEGAcm as the intermediate P<-> layer. CONSTITUTION:Three elementary color phosphor material and an index phosphor material 4 having short light residue are arranged on a face plate 1a, then it is sweeped by the electrobeam 6 from single electron gun 5 to detect the light signal 7 from a phosphor material 4 by a photodiode 9 and to impinge against predetermined phosphor material. Here P<-> layer 17 is epitaxially grown on a N<-> substrate 16 then P<+> layer 20 thinner than 0.1mu is formed through the ion injection while furthermore a reflection preventing film 22 is formed. Consequently the crystality of P<-> layer 17 is improved and the arrival of the carrier to the electrode 24 is facilitated thereby the sensibility for the index light of th wave length in the order of 300-600nm can be improved.
JP55175331A 1980-12-11 1980-12-11 Photodiode for detecting index light signal in beam index type color television receiver Pending JPS5798961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55175331A JPS5798961A (en) 1980-12-11 1980-12-11 Photodiode for detecting index light signal in beam index type color television receiver

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55175331A JPS5798961A (en) 1980-12-11 1980-12-11 Photodiode for detecting index light signal in beam index type color television receiver

Publications (1)

Publication Number Publication Date
JPS5798961A true JPS5798961A (en) 1982-06-19

Family

ID=15994197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55175331A Pending JPS5798961A (en) 1980-12-11 1980-12-11 Photodiode for detecting index light signal in beam index type color television receiver

Country Status (1)

Country Link
JP (1) JPS5798961A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293613A (en) * 1986-06-12 1987-12-21 Fuji Electric Co Ltd Manufacture of semiconductor radiation detecting element

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326593A (en) * 1976-08-23 1978-03-11 Ibm Photodiode device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5326593A (en) * 1976-08-23 1978-03-11 Ibm Photodiode device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293613A (en) * 1986-06-12 1987-12-21 Fuji Electric Co Ltd Manufacture of semiconductor radiation detecting element

Similar Documents

Publication Publication Date Title
JPS55115386A (en) Semiconductor laser unit
GB1568351A (en) Semiconductor lightemitting devices
Pearsall et al. Orientation dependence of free-carrier impact ionization in semiconductors: GaAs
JPS5798961A (en) Photodiode for detecting index light signal in beam index type color television receiver
JPS57132155A (en) Photoelectric transducer
JPS56107588A (en) Semiconductor light emitting element
JPS5642388A (en) Semiconductor light emitting device
JPS55130182A (en) P-n hetero junction solar battery
JPS5774945A (en) Photoconductive film for image pick-up tube
JPS5771191A (en) Photosemiconductor element
JPS6437061A (en) Photodetector
JPS57134960A (en) Semiconductor device
JPS5670675A (en) Manufacture of photoelectric converter
JPS5680178A (en) Gaas solar cell
JPS55162223A (en) Semiconductor device and its preparation
JPS5690570A (en) Avalanche photodiode
JPS57204181A (en) Gaas solar battery and manufacture thereof
Chen et al. Back‐side illuminated Ga0. 47In0. 53As photoconductive detectors and associated dark zones
JPS5564350A (en) Radioactive-ray receiving face
JPS5595318A (en) Production of amorphous film
JPS5778182A (en) Semiconductor position detector
JPS6481276A (en) Semiconductor radiation detector
JPS5730246A (en) Image pick-up device
JPH01253973A (en) Semiconductor radiation detector and its manufacture
JPS5723278A (en) Compound semiconductor avalanche photodiode