JPS579879A - Dry etching apparatus - Google Patents

Dry etching apparatus

Info

Publication number
JPS579879A
JPS579879A JP8288380A JP8288380A JPS579879A JP S579879 A JPS579879 A JP S579879A JP 8288380 A JP8288380 A JP 8288380A JP 8288380 A JP8288380 A JP 8288380A JP S579879 A JPS579879 A JP S579879A
Authority
JP
Japan
Prior art keywords
heat
sample
photoresist pattern
vacuum vessel
temp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8288380A
Other languages
Japanese (ja)
Inventor
Yoshimichi Hirobe
Yoshinori Kureishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP8288380A priority Critical patent/JPS579879A/en
Publication of JPS579879A publication Critical patent/JPS579879A/en
Pending legal-status Critical Current

Links

Landscapes

  • ing And Chemical Polishing (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE: To inhibit a temp. rise of a sample and to prevent the deformation of a photoresist pattern by attaching materials well absorbing heat and hardly reflecting heat to the surfaces of a vacuum vessel and electrode plates.
CONSTITUTION: A chemically treated stainless steel plate 13 is attached to the inner surface of a vacuum vessel 1, and chemically treated Al plates 14, 15 are set on the surfaces of electrodes 2, 3. The materials of the structures 13, 14, 15 show high heat absorptance, low heat reflection and low heat radiation. Accordingly, the surface temp. of a sample 9 is inhibited from rising owing to heat radiated from plasma 10 formed by RF discharge, and the sample 9 hardly undergoes thermal damage. As a result, precise patterning is performed without damaging the photoresist pattern.
COPYRIGHT: (C)1982,JPO&Japio
JP8288380A 1980-06-20 1980-06-20 Dry etching apparatus Pending JPS579879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8288380A JPS579879A (en) 1980-06-20 1980-06-20 Dry etching apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8288380A JPS579879A (en) 1980-06-20 1980-06-20 Dry etching apparatus

Publications (1)

Publication Number Publication Date
JPS579879A true JPS579879A (en) 1982-01-19

Family

ID=13786667

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8288380A Pending JPS579879A (en) 1980-06-20 1980-06-20 Dry etching apparatus

Country Status (1)

Country Link
JP (1) JPS579879A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61232613A (en) * 1985-04-08 1986-10-16 Semiconductor Energy Lab Co Ltd Apparatus for vapor-phase reaction in plasma
JPH0365299A (en) * 1989-08-03 1991-03-20 Hitachi Plant Eng & Constr Co Ltd Oxidation ditch type sewage treatment apparatus

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61232613A (en) * 1985-04-08 1986-10-16 Semiconductor Energy Lab Co Ltd Apparatus for vapor-phase reaction in plasma
JPH0365299A (en) * 1989-08-03 1991-03-20 Hitachi Plant Eng & Constr Co Ltd Oxidation ditch type sewage treatment apparatus

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