JPS5794990A - Data rom - Google Patents

Data rom

Info

Publication number
JPS5794990A
JPS5794990A JP17053480A JP17053480A JPS5794990A JP S5794990 A JPS5794990 A JP S5794990A JP 17053480 A JP17053480 A JP 17053480A JP 17053480 A JP17053480 A JP 17053480A JP S5794990 A JPS5794990 A JP S5794990A
Authority
JP
Japan
Prior art keywords
output
input
lines
line
voltage level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17053480A
Other languages
Japanese (ja)
Inventor
Tomoyasu Hirano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17053480A priority Critical patent/JPS5794990A/en
Publication of JPS5794990A publication Critical patent/JPS5794990A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To increase storage capacity by a limited number of storage elements outputting data, which has >=3 states, to output lines by varying the voltage levels of input lines. CONSTITUTION:Address-coded input lines 1, output lines 2, and a latch clock input line 3 constitute a data ROM wherein the relative relation between input and output signals is fixed. When a prescribed voltage level is inputted to an input line 1, a transistor TR4 turns on and a TR5 turns off because they have different threshold levels, thereby outputting a level Vss to an output line (c). In addition, when another voltage level is inputted to the input line 1 to turn on the TRs 4 and 5, the level Vss is outputted to output lines (b) and (c). Then, when a voltage VDD is supplied as the voltage level, it is outputted to an out- put line (a) to generate an output which has at least three states, increasing storage capacity.
JP17053480A 1980-12-03 1980-12-03 Data rom Pending JPS5794990A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17053480A JPS5794990A (en) 1980-12-03 1980-12-03 Data rom

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17053480A JPS5794990A (en) 1980-12-03 1980-12-03 Data rom

Publications (1)

Publication Number Publication Date
JPS5794990A true JPS5794990A (en) 1982-06-12

Family

ID=15906694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17053480A Pending JPS5794990A (en) 1980-12-03 1980-12-03 Data rom

Country Status (1)

Country Link
JP (1) JPS5794990A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0634750A2 (en) * 1993-07-12 1995-01-18 Kabushiki Kaisha Toshiba Apparatus and method for reading multi-level data stored in a semiconductor memory
WO1995031814A1 (en) * 1994-05-13 1995-11-23 Aplus Integrated Circuits, Inc. Multistate rom memory cell array

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0634750A2 (en) * 1993-07-12 1995-01-18 Kabushiki Kaisha Toshiba Apparatus and method for reading multi-level data stored in a semiconductor memory
US5852575A (en) * 1993-07-12 1998-12-22 Kabushiki Kaisha Toshiba Apparatus and method for reading multi-level data stored in a semiconductor memory
WO1995031814A1 (en) * 1994-05-13 1995-11-23 Aplus Integrated Circuits, Inc. Multistate rom memory cell array

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