JPS5613592A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5613592A
JPS5613592A JP8890379A JP8890379A JPS5613592A JP S5613592 A JPS5613592 A JP S5613592A JP 8890379 A JP8890379 A JP 8890379A JP 8890379 A JP8890379 A JP 8890379A JP S5613592 A JPS5613592 A JP S5613592A
Authority
JP
Japan
Prior art keywords
level
couple
load
transistors
held
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8890379A
Other languages
Japanese (ja)
Inventor
Tsuyoshi Tanahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP8890379A priority Critical patent/JPS5613592A/en
Publication of JPS5613592A publication Critical patent/JPS5613592A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To make it possible to compose a static memory of four elements by supplying electric current to load transistors via a couple of digit lines and then by forming the load transistors in a couple of word-selecting transistors. CONSTITUTION:Word line W is held at a high level and transistors Tr1 and Tr2 are activated to write information to terminals A and B from a couple of digit lines. Next, digit line D is held at high level V1, and the other digit line at level V2 higher than low level VL. Then, turning off Tr1 and Tr2 holds terminals A and B at levels V1 and VL respectively. At this time, the couple of digit lines are set to level V1 at the same time. Next, a potential for compensating a fall in level at terminal A is supplied from line D via load Tr5. Consequently, terminal A can be held at the high level at any time. Here, the memory can be formed of four elements by forming load Tr5 and Tr6 in Tr1 and Tr2.
JP8890379A 1979-07-13 1979-07-13 Semiconductor memory Pending JPS5613592A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8890379A JPS5613592A (en) 1979-07-13 1979-07-13 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8890379A JPS5613592A (en) 1979-07-13 1979-07-13 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5613592A true JPS5613592A (en) 1981-02-09

Family

ID=13955901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8890379A Pending JPS5613592A (en) 1979-07-13 1979-07-13 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5613592A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58160063A (en) * 1982-03-15 1983-09-22 日東工器株式会社 Motor driver
JP2016031944A (en) * 2014-07-25 2016-03-07 新日本無線株式会社 Constant current circuit

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58160063A (en) * 1982-03-15 1983-09-22 日東工器株式会社 Motor driver
JPH0242631B2 (en) * 1982-03-15 1990-09-25
JP2016031944A (en) * 2014-07-25 2016-03-07 新日本無線株式会社 Constant current circuit

Similar Documents

Publication Publication Date Title
JPS57127989A (en) Mos static type ram
GB1463382A (en) Semiconductor data stores including binery signal regenerating circuits
KR850004855A (en) Semiconductor memory device
US4536859A (en) Cross-coupled inverters static random access memory
KR900004345B1 (en) Semiconductor memory device
JPS5677980A (en) Semiconductor memory device
GB1463621A (en) Transistor storage systems
EP0115140A2 (en) Decoder circuit
JPS56143587A (en) Static type memory circuit
JPS5769586A (en) Semiconductor memory device
IE830378L (en) Semiconductor memory
US4380055A (en) Static RAM memory cell
JPS54107228A (en) Memory circuit
JPS5613592A (en) Semiconductor memory
JPS5562588A (en) Semiconductor memory circuit
MY103940A (en) Semiconductor memory capable of improving data rewrite speed
US5034924A (en) Static random access memory device with pull-down control circuit
KR850001614A (en) EEPROM type memory system
JPS56114197A (en) Semiconductor memory device
JPS56105387A (en) Random access memory circuit
KR100420085B1 (en) Low power sram device
KR880002811Y1 (en) Rom circuit
JPS6435797A (en) Non-volatile semiconductor storage device
JPH04271090A (en) Semiconductor memory device
JPS5644192A (en) Semiconductor memory cell circuit