JPS5793317A - Solid-state optical shutter - Google Patents

Solid-state optical shutter

Info

Publication number
JPS5793317A
JPS5793317A JP16914480A JP16914480A JPS5793317A JP S5793317 A JPS5793317 A JP S5793317A JP 16914480 A JP16914480 A JP 16914480A JP 16914480 A JP16914480 A JP 16914480A JP S5793317 A JPS5793317 A JP S5793317A
Authority
JP
Japan
Prior art keywords
electrode pairs
aluminum oxide
optical shutter
type electrodes
state optical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16914480A
Other languages
Japanese (ja)
Inventor
Hiroshi Ikushima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP16914480A priority Critical patent/JPS5793317A/en
Publication of JPS5793317A publication Critical patent/JPS5793317A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
    • G02F1/055—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic
    • G02F1/0551—Constructional details

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Nonlinear Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)

Abstract

PURPOSE:To improve light transmittance without lowering the value of contrast by covering the regions formed with crossed finger type electrodes of the intermediate layers between the surfaces of a thin plate of PLZT and the crossed finger type electrodes with thin films of aluminum oxide. CONSTITUTION:1 is a thin plate consisting of PLZT permitting force phase transfer by a Kerr effect or electric field. The thin films 2, 2' of aluminum oxide provided on the main planes of said thin film 1 are so formed as to cover the region parts functioning as a solid state optical shutter by a method such as vapor deposition. Positive and negative electrode pairs 3, 4 of crossed finger type electrodes are formed on the surface of the layer 2, and these electrode pairs 3, 4 are connected to power feed terminal parts 6, 6. Electrode pairs 3', 4' are connected to power feed terminal parts 5' 6' and are formed on the surface of the layer 2' of aluminum oxide in a way as to assume symmetry with the electrode pairs 3, 4. Polarizing films are provided on both surfaces of the electrooptic effect element formed in this way, whereby it is constituted to the solid- state optical shutter.
JP16914480A 1980-12-02 1980-12-02 Solid-state optical shutter Pending JPS5793317A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16914480A JPS5793317A (en) 1980-12-02 1980-12-02 Solid-state optical shutter

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16914480A JPS5793317A (en) 1980-12-02 1980-12-02 Solid-state optical shutter

Publications (1)

Publication Number Publication Date
JPS5793317A true JPS5793317A (en) 1982-06-10

Family

ID=15881095

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16914480A Pending JPS5793317A (en) 1980-12-02 1980-12-02 Solid-state optical shutter

Country Status (1)

Country Link
JP (1) JPS5793317A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621903A (en) * 1983-01-14 1986-11-11 Sony Corporation Electro-optic light shutter

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4621903A (en) * 1983-01-14 1986-11-11 Sony Corporation Electro-optic light shutter

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