JPS5792867A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5792867A
JPS5792867A JP55168618A JP16861880A JPS5792867A JP S5792867 A JPS5792867 A JP S5792867A JP 55168618 A JP55168618 A JP 55168618A JP 16861880 A JP16861880 A JP 16861880A JP S5792867 A JPS5792867 A JP S5792867A
Authority
JP
Japan
Prior art keywords
gate
oxide film
eliminating
insulating film
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55168618A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225274B2 (enrdf_load_stackoverflow
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55168618A priority Critical patent/JPS5792867A/ja
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to DE8181305349T priority patent/DE3175125D1/de
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS5792867A publication Critical patent/JPS5792867A/ja
Publication of JPS6225274B2 publication Critical patent/JPS6225274B2/ja
Priority to US07/193,079 priority patent/US4910565A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP55168618A 1980-11-20 1980-11-29 Semiconductor memory device Granted JPS5792867A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55168618A JPS5792867A (en) 1980-11-29 1980-11-29 Semiconductor memory device
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168618A JPS5792867A (en) 1980-11-29 1980-11-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5792867A true JPS5792867A (en) 1982-06-09
JPS6225274B2 JPS6225274B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=15871391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168618A Granted JPS5792867A (en) 1980-11-20 1980-11-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5792867A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6225274B2 (enrdf_load_stackoverflow) 1987-06-02

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