JPS5792867A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS5792867A
JPS5792867A JP55168618A JP16861880A JPS5792867A JP S5792867 A JPS5792867 A JP S5792867A JP 55168618 A JP55168618 A JP 55168618A JP 16861880 A JP16861880 A JP 16861880A JP S5792867 A JPS5792867 A JP S5792867A
Authority
JP
Japan
Prior art keywords
gate
oxide film
eliminating
insulating film
floating gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55168618A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6225274B2 (enrdf_load_stackoverflow
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55168618A priority Critical patent/JPS5792867A/ja
Priority to DE8181305349T priority patent/DE3175125D1/de
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS5792867A publication Critical patent/JPS5792867A/ja
Publication of JPS6225274B2 publication Critical patent/JPS6225274B2/ja
Priority to US07/193,079 priority patent/US4910565A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

Landscapes

  • Non-Volatile Memory (AREA)
JP55168618A 1980-11-20 1980-11-29 Semiconductor memory device Granted JPS5792867A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55168618A JPS5792867A (en) 1980-11-29 1980-11-29 Semiconductor memory device
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168618A JPS5792867A (en) 1980-11-29 1980-11-29 Semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5792867A true JPS5792867A (en) 1982-06-09
JPS6225274B2 JPS6225274B2 (enrdf_load_stackoverflow) 1987-06-02

Family

ID=15871391

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168618A Granted JPS5792867A (en) 1980-11-20 1980-11-29 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5792867A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPS6225274B2 (enrdf_load_stackoverflow) 1987-06-02

Similar Documents

Publication Publication Date Title
JPS56169368A (en) High withstand voltage mos field effect semiconductor device
GB1447604A (en) Ferroelectric memory device
JPS5580886A (en) Semiconductor memory element and memory circuit
HK40790A (en) Semiconductor device and method of producing such a device
JPS5678170A (en) Semiconductor memory
KR910010656A (ko) 대전력용 반도체장치
JPS5776878A (en) Semiconductor memory device
JPS5683076A (en) High tension mos field-effect transistor
JPS5792867A (en) Semiconductor memory device
JPS5745975A (en) Input protecting device for semiconductor device
JPS5776877A (en) Semiconductor memory device and manufacture thereof
FR2322461A1 (fr) Transistor a film mince
JPS5792866A (en) Semiconductor memory device
JPS6454762A (en) Insulated gate field effect transistor
JPS5734368A (en) Protective diode for insulated gate field-effect transistor
JPS56133870A (en) Mos field effect semiconductor device with high breakdown voltage
EP0294989A3 (en) Non-volatile semi-conductor memory device
JPS56133871A (en) Mos field effect semiconductor device with high breakdown voltage
JPS5766671A (en) Semiconductor device
JPS52127157A (en) Manufacture of semiconductor
JPS57100768A (en) Manufacture of field effect semiconductor device
JPS5649574A (en) Semiconductor device
EP0069233A3 (en) Memory array and methods of making same
JPS57103348A (en) Semiconductor memory device
JPS6417475A (en) Manufacture of mos semiconductor device