JPS5790630A - X-ray photosensitive element - Google Patents

X-ray photosensitive element

Info

Publication number
JPS5790630A
JPS5790630A JP16749880A JP16749880A JPS5790630A JP S5790630 A JPS5790630 A JP S5790630A JP 16749880 A JP16749880 A JP 16749880A JP 16749880 A JP16749880 A JP 16749880A JP S5790630 A JPS5790630 A JP S5790630A
Authority
JP
Japan
Prior art keywords
layer
ray
dielectric
selenium
absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16749880A
Other languages
Japanese (ja)
Inventor
Akitomo Tejima
Kohei Kiyota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16749880A priority Critical patent/JPS5790630A/en
Publication of JPS5790630A publication Critical patent/JPS5790630A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/14Inert intermediate or cover layers for charge-receiving layers

Abstract

PURPOSE:To increase the electric charge quantity forming electrostatic latent images and obtain sharp reproduced images by constituting an X-ray photoreceptor layer of an X-ray photosensitive element of a selenium layer and a material layer of a high X-ray absorption effect. CONSTITUTION:In an X-ray photosensitive layer consisting of electrodes 1, 5, a dielectric layer 2, an X-ray photoreceptor layer 4, etc., the X-ray photosensitive layer is formed of a selenium layer 4, and a material layer of high X-ray absorption efficiency, for example, a lead oxide layer 7. Lead oxide has a higher coefft. of X-ray absorption as compared to selenium, and the coefft. of absorption is proportional to the rate of light carrier generation by X-ray exposure. Hence, the number of carrier generation is larger in the layer 7 than in the layer 4 with respect to the same X-ray energy, and out of the light carriers generated in the layer 7, positive charge travels into the layer 4; hence, the quantity of electrostatic charge in the surface of the layer 4 increases and the quantity of the charge charged in the surface of the dielectric 2 increases as well, so that the much more developer is absorbed in the surface of the dielectric 2 at the developing.
JP16749880A 1980-11-28 1980-11-28 X-ray photosensitive element Pending JPS5790630A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16749880A JPS5790630A (en) 1980-11-28 1980-11-28 X-ray photosensitive element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16749880A JPS5790630A (en) 1980-11-28 1980-11-28 X-ray photosensitive element

Publications (1)

Publication Number Publication Date
JPS5790630A true JPS5790630A (en) 1982-06-05

Family

ID=15850790

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16749880A Pending JPS5790630A (en) 1980-11-28 1980-11-28 X-ray photosensitive element

Country Status (1)

Country Link
JP (1) JPS5790630A (en)

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