JPS5790630A - X-ray photosensitive element - Google Patents
X-ray photosensitive elementInfo
- Publication number
- JPS5790630A JPS5790630A JP16749880A JP16749880A JPS5790630A JP S5790630 A JPS5790630 A JP S5790630A JP 16749880 A JP16749880 A JP 16749880A JP 16749880 A JP16749880 A JP 16749880A JP S5790630 A JPS5790630 A JP S5790630A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- ray
- dielectric
- selenium
- absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
Abstract
PURPOSE:To increase the electric charge quantity forming electrostatic latent images and obtain sharp reproduced images by constituting an X-ray photoreceptor layer of an X-ray photosensitive element of a selenium layer and a material layer of a high X-ray absorption effect. CONSTITUTION:In an X-ray photosensitive layer consisting of electrodes 1, 5, a dielectric layer 2, an X-ray photoreceptor layer 4, etc., the X-ray photosensitive layer is formed of a selenium layer 4, and a material layer of high X-ray absorption efficiency, for example, a lead oxide layer 7. Lead oxide has a higher coefft. of X-ray absorption as compared to selenium, and the coefft. of absorption is proportional to the rate of light carrier generation by X-ray exposure. Hence, the number of carrier generation is larger in the layer 7 than in the layer 4 with respect to the same X-ray energy, and out of the light carriers generated in the layer 7, positive charge travels into the layer 4; hence, the quantity of electrostatic charge in the surface of the layer 4 increases and the quantity of the charge charged in the surface of the dielectric 2 increases as well, so that the much more developer is absorbed in the surface of the dielectric 2 at the developing.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16749880A JPS5790630A (en) | 1980-11-28 | 1980-11-28 | X-ray photosensitive element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16749880A JPS5790630A (en) | 1980-11-28 | 1980-11-28 | X-ray photosensitive element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5790630A true JPS5790630A (en) | 1982-06-05 |
Family
ID=15850790
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16749880A Pending JPS5790630A (en) | 1980-11-28 | 1980-11-28 | X-ray photosensitive element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5790630A (en) |
-
1980
- 1980-11-28 JP JP16749880A patent/JPS5790630A/en active Pending
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