JPS5787171A - Optical thyristor device - Google Patents

Optical thyristor device

Info

Publication number
JPS5787171A
JPS5787171A JP55163902A JP16390280A JPS5787171A JP S5787171 A JPS5787171 A JP S5787171A JP 55163902 A JP55163902 A JP 55163902A JP 16390280 A JP16390280 A JP 16390280A JP S5787171 A JPS5787171 A JP S5787171A
Authority
JP
Japan
Prior art keywords
light
electrode
photo
pressure
welded
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55163902A
Other languages
Japanese (ja)
Inventor
Hiromichi Ohashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55163902A priority Critical patent/JPS5787171A/en
Publication of JPS5787171A publication Critical patent/JPS5787171A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24Coupling light guides
    • G02B6/42Coupling light guides with opto-electronic elements
    • G02B6/4295Coupling light guides with opto-electronic elements coupling with semiconductor devices activated by light through the light guide, e.g. thyristors, phototransistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor

Abstract

PURPOSE:To efficiently guid a photo signal to the light-receiving region of the thyristor by a method wherein, when a photo thyristor is placed in a twoside pressure-welded sheath, a photo signal light-receiving window is provided on the pressure-welded electrode, an aperture section is provided on the sheath corresponding to the light-receiving window, and a photo signal transmitting material is inserted in the aperture section by coinciding the optical axis. CONSTITUTION:The metal plate 2, provided on the lower surface of the thyristor main body 1 consisting of Si, is fixed on the anodic pressure-welded electrode 3, and the cathode electrode 4, which was provided on the surface of the main body 1, is fixed on a cathode pressure-welded electrode 6 through the intermediary of a metal plate 5. In this constitution, a light-receiving window section 7, where a photo signal is led in, is provided on the cathode electrode 4 and the metal plate 5, and a metal cylinder 8 having a photo signal transmitting window 9 is passed through an electrode 6 and coaxially fitted and fixed on the electrode 6. Also, on the upper part of the cylinder 8, a cylindrical jig 18 is provided and a light guide 19, consisting of a bundle- type photo fiber, is inserted in the hole 17 which was provided in the jig 18, and the light sent from a light-emitting diode 23 can be guided to a light-receiving window section 7 by the light guide 19.
JP55163902A 1980-11-20 1980-11-20 Optical thyristor device Pending JPS5787171A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55163902A JPS5787171A (en) 1980-11-20 1980-11-20 Optical thyristor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55163902A JPS5787171A (en) 1980-11-20 1980-11-20 Optical thyristor device

Publications (1)

Publication Number Publication Date
JPS5787171A true JPS5787171A (en) 1982-05-31

Family

ID=15782991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55163902A Pending JPS5787171A (en) 1980-11-20 1980-11-20 Optical thyristor device

Country Status (1)

Country Link
JP (1) JPS5787171A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239665A (en) * 1985-04-12 1986-10-24 シ−メンス、アクチエンゲゼルシヤフト Light ignitable thyristor
JP2003524099A (en) * 1999-11-30 2003-08-12 ロバート ボッシュ ゲーエムベーハー High pressure hydraulic fuel pump

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61239665A (en) * 1985-04-12 1986-10-24 シ−メンス、アクチエンゲゼルシヤフト Light ignitable thyristor
JP2003524099A (en) * 1999-11-30 2003-08-12 ロバート ボッシュ ゲーエムベーハー High pressure hydraulic fuel pump
JP4902923B2 (en) * 1999-11-30 2012-03-21 ロバート ボッシュ ゲーエムベーハー High pressure hydraulic fuel pump

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