JPS5783527A - Preparation of high polymeric semiconductor thin film - Google Patents
Preparation of high polymeric semiconductor thin filmInfo
- Publication number
- JPS5783527A JPS5783527A JP15821880A JP15821880A JPS5783527A JP S5783527 A JPS5783527 A JP S5783527A JP 15821880 A JP15821880 A JP 15821880A JP 15821880 A JP15821880 A JP 15821880A JP S5783527 A JPS5783527 A JP S5783527A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- base board
- preparation
- high polymeric
- vapor deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Application Of Or Painting With Fluid Materials (AREA)
- Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
Abstract
PURPOSE: To obtain the titled thin film, capable of being electrically conductive easily, rich in flexibility, and useful as a semiconductor material, etc. directly on a base board easily, by the vacuum vapor deposition of a substrate consisting of an organic salt of an oxidizing agent on the base board and simultaneously decomposing the substrate under heating.
CONSTITUTION: A starting raw material 4, e.g. aniline hydrochloride, is introduced into a heating boat 2, heated at 150W200°C in a vacuum of usually 10-5mm Hg, and simultaneously an active radical seed prepared by the vacuum vapor deposition and thermal decomposition on a base board 3, e.g., glass coated with In2O3, is coupled and polymerized with the starting raw material 4 to give a thin film-like high polymeric semiconductor, e.g. polyaniline.
EFFECT: The preparation of pattern circuits is possible and the p-n junction is easily carried out.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15821880A JPS5783527A (en) | 1980-11-12 | 1980-11-12 | Preparation of high polymeric semiconductor thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15821880A JPS5783527A (en) | 1980-11-12 | 1980-11-12 | Preparation of high polymeric semiconductor thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5783527A true JPS5783527A (en) | 1982-05-25 |
Family
ID=15666857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15821880A Pending JPS5783527A (en) | 1980-11-12 | 1980-11-12 | Preparation of high polymeric semiconductor thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5783527A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60501262A (en) * | 1983-05-06 | 1985-08-08 | コミツサレ・ア・レナジイ・アトミツク | Process for producing polyaniline, polyanine obtained by this process and its use in the production of electrochemical generators |
JPS6185440A (en) * | 1984-10-03 | 1986-05-01 | Showa Denko Kk | Polyaminopyridine |
-
1980
- 1980-11-12 JP JP15821880A patent/JPS5783527A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60501262A (en) * | 1983-05-06 | 1985-08-08 | コミツサレ・ア・レナジイ・アトミツク | Process for producing polyaniline, polyanine obtained by this process and its use in the production of electrochemical generators |
JPS6185440A (en) * | 1984-10-03 | 1986-05-01 | Showa Denko Kk | Polyaminopyridine |
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