JPS5782289A - Semiconductor storage device - Google Patents

Semiconductor storage device

Info

Publication number
JPS5782289A
JPS5782289A JP55159269A JP15926980A JPS5782289A JP S5782289 A JPS5782289 A JP S5782289A JP 55159269 A JP55159269 A JP 55159269A JP 15926980 A JP15926980 A JP 15926980A JP S5782289 A JPS5782289 A JP S5782289A
Authority
JP
Japan
Prior art keywords
trs
write
storage device
semiconductor storage
transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55159269A
Other languages
Japanese (ja)
Other versions
JPH038038B2 (en
Inventor
Hide Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55159269A priority Critical patent/JPS5782289A/en
Publication of JPS5782289A publication Critical patent/JPS5782289A/en
Publication of JPH038038B2 publication Critical patent/JPH038038B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only

Abstract

PURPOSE:To shorten the readout/write-in time and to stabilize the circuit operation, by setting the threshold value of a transfer transistor (TR) lower than that of others of the same element. CONSTITUTION:In a semiconductor storage device, e.g., a static RAM, the memory cell is consists basically of flip-flops storing the data and TRs for write-in data transfer TR2 and TR2'. As the said TR2 and TR2' TRs having an absolute value with lower threshold voltage than the absolute value of the threshold voltage of other enhancement type TRs in the same memory element are used. Thus, the readout/write-in time is shortened without changing the construction of elements. Further, since the threshold value of voltage is applicably only to the transfer TRs, the circuit operates stably.
JP55159269A 1980-11-12 1980-11-12 Semiconductor storage device Granted JPS5782289A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159269A JPS5782289A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159269A JPS5782289A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Publications (2)

Publication Number Publication Date
JPS5782289A true JPS5782289A (en) 1982-05-22
JPH038038B2 JPH038038B2 (en) 1991-02-05

Family

ID=15690074

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159269A Granted JPS5782289A (en) 1980-11-12 1980-11-12 Semiconductor storage device

Country Status (1)

Country Link
JP (1) JPS5782289A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108093A (en) * 1981-12-21 1983-06-28 Nippon Telegr & Teleph Corp <Ntt> Memory cell

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098750A (en) * 1973-12-26 1975-08-06
JPS5429553A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Mis type semiconductor integrated circuit device
JPS5460873A (en) * 1977-10-24 1979-05-16 Nec Corp Semiconductor integrated circuit device
JPS5548894A (en) * 1978-09-29 1980-04-08 Nec Corp Memory circuit

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5098750A (en) * 1973-12-26 1975-08-06
JPS5429553A (en) * 1977-08-10 1979-03-05 Hitachi Ltd Mis type semiconductor integrated circuit device
JPS5460873A (en) * 1977-10-24 1979-05-16 Nec Corp Semiconductor integrated circuit device
JPS5548894A (en) * 1978-09-29 1980-04-08 Nec Corp Memory circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58108093A (en) * 1981-12-21 1983-06-28 Nippon Telegr & Teleph Corp <Ntt> Memory cell

Also Published As

Publication number Publication date
JPH038038B2 (en) 1991-02-05

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