JPS5460873A - Semiconductor integrated circuit device - Google Patents
Semiconductor integrated circuit deviceInfo
- Publication number
- JPS5460873A JPS5460873A JP12801477A JP12801477A JPS5460873A JP S5460873 A JPS5460873 A JP S5460873A JP 12801477 A JP12801477 A JP 12801477A JP 12801477 A JP12801477 A JP 12801477A JP S5460873 A JPS5460873 A JP S5460873A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- polycrystal
- line
- inverter circuit
- well
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To reduce the delay of the signal as well as to increase the action velocity and to enhance the density by forming one gate with the metal and the other gate with the polycrystal Si respectively when two MOS-type transistors are formed on the same semiconductor wafer.
CONSTITUTION: The inverter circuit consists of load transistor 31 of the polycrystal Si gate MOS type and high-speed transistor 32 of the Al gate MOS type, and output line 33, power line 34 and earth line 35 are attached to the inverter circuit. In this way, the signal line and the gate which require a high speed are formed with the high conductivity metal such as Al, Mo, Pt silicide, Au and the like, and other gates are formecd with polycrystal Si. As a result, the parasitic capacity is reduced between the gate and source as well as between the gate and drain, ensuring better characteristics
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12801477A JPS5460873A (en) | 1977-10-24 | 1977-10-24 | Semiconductor integrated circuit device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12801477A JPS5460873A (en) | 1977-10-24 | 1977-10-24 | Semiconductor integrated circuit device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5460873A true JPS5460873A (en) | 1979-05-16 |
Family
ID=14974338
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12801477A Pending JPS5460873A (en) | 1977-10-24 | 1977-10-24 | Semiconductor integrated circuit device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5460873A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5782289A (en) * | 1980-11-12 | 1982-05-22 | Toshiba Corp | Semiconductor storage device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825484A (en) * | 1971-08-04 | 1973-04-03 |
-
1977
- 1977-10-24 JP JP12801477A patent/JPS5460873A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4825484A (en) * | 1971-08-04 | 1973-04-03 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5782289A (en) * | 1980-11-12 | 1982-05-22 | Toshiba Corp | Semiconductor storage device |
JPH038038B2 (en) * | 1980-11-12 | 1991-02-05 | Tokyo Shibaura Electric Co |
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