JPS5460873A - Semiconductor integrated circuit device - Google Patents

Semiconductor integrated circuit device

Info

Publication number
JPS5460873A
JPS5460873A JP12801477A JP12801477A JPS5460873A JP S5460873 A JPS5460873 A JP S5460873A JP 12801477 A JP12801477 A JP 12801477A JP 12801477 A JP12801477 A JP 12801477A JP S5460873 A JPS5460873 A JP S5460873A
Authority
JP
Japan
Prior art keywords
gate
polycrystal
line
inverter circuit
well
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12801477A
Other languages
Japanese (ja)
Inventor
Kenjirou Mitsutake
Takashi Yamanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP12801477A priority Critical patent/JPS5460873A/en
Publication of JPS5460873A publication Critical patent/JPS5460873A/en
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE: To reduce the delay of the signal as well as to increase the action velocity and to enhance the density by forming one gate with the metal and the other gate with the polycrystal Si respectively when two MOS-type transistors are formed on the same semiconductor wafer.
CONSTITUTION: The inverter circuit consists of load transistor 31 of the polycrystal Si gate MOS type and high-speed transistor 32 of the Al gate MOS type, and output line 33, power line 34 and earth line 35 are attached to the inverter circuit. In this way, the signal line and the gate which require a high speed are formed with the high conductivity metal such as Al, Mo, Pt silicide, Au and the like, and other gates are formecd with polycrystal Si. As a result, the parasitic capacity is reduced between the gate and source as well as between the gate and drain, ensuring better characteristics
COPYRIGHT: (C)1979,JPO&Japio
JP12801477A 1977-10-24 1977-10-24 Semiconductor integrated circuit device Pending JPS5460873A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12801477A JPS5460873A (en) 1977-10-24 1977-10-24 Semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12801477A JPS5460873A (en) 1977-10-24 1977-10-24 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5460873A true JPS5460873A (en) 1979-05-16

Family

ID=14974338

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12801477A Pending JPS5460873A (en) 1977-10-24 1977-10-24 Semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5460873A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5782289A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825484A (en) * 1971-08-04 1973-04-03

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4825484A (en) * 1971-08-04 1973-04-03

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5782289A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device
JPH038038B2 (en) * 1980-11-12 1991-02-05 Tokyo Shibaura Electric Co

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