JPS5429553A - Mis type semiconductor integrated circuit device - Google Patents

Mis type semiconductor integrated circuit device

Info

Publication number
JPS5429553A
JPS5429553A JP9503177A JP9503177A JPS5429553A JP S5429553 A JPS5429553 A JP S5429553A JP 9503177 A JP9503177 A JP 9503177A JP 9503177 A JP9503177 A JP 9503177A JP S5429553 A JPS5429553 A JP S5429553A
Authority
JP
Japan
Prior art keywords
integrated circuit
type semiconductor
semiconductor integrated
circuit device
mis type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9503177A
Other languages
Japanese (ja)
Inventor
Fumio Mizuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP9503177A priority Critical patent/JPS5429553A/en
Publication of JPS5429553A publication Critical patent/JPS5429553A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/01—Modifications for accelerating switching
    • H03K19/017—Modifications for accelerating switching in field-effect transistor circuits
    • H03K19/01707—Modifications for accelerating switching in field-effect transistor circuits in asynchronous circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To increase the high speed without decreasing the integrated density of MIS IC, by setting absolutely larger threshold voltage of the driving MIS FET at the later stage than that of the MIS FET at the prestage.
JP9503177A 1977-08-10 1977-08-10 Mis type semiconductor integrated circuit device Pending JPS5429553A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9503177A JPS5429553A (en) 1977-08-10 1977-08-10 Mis type semiconductor integrated circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9503177A JPS5429553A (en) 1977-08-10 1977-08-10 Mis type semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
JPS5429553A true JPS5429553A (en) 1979-03-05

Family

ID=14126709

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9503177A Pending JPS5429553A (en) 1977-08-10 1977-08-10 Mis type semiconductor integrated circuit device

Country Status (1)

Country Link
JP (1) JPS5429553A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5782289A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5782289A (en) * 1980-11-12 1982-05-22 Toshiba Corp Semiconductor storage device
JPH038038B2 (en) * 1980-11-12 1991-02-05 Tokyo Shibaura Electric Co

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