JPS5782110A - Preparation of titanium nitride and titanium carbide - Google Patents

Preparation of titanium nitride and titanium carbide

Info

Publication number
JPS5782110A
JPS5782110A JP55159187A JP15918780A JPS5782110A JP S5782110 A JPS5782110 A JP S5782110A JP 55159187 A JP55159187 A JP 55159187A JP 15918780 A JP15918780 A JP 15918780A JP S5782110 A JPS5782110 A JP S5782110A
Authority
JP
Japan
Prior art keywords
titanium
carbide
titanium oxide
heat
gas containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55159187A
Other languages
Japanese (ja)
Other versions
JPS6144801B2 (en
Inventor
Tomizo Matsuoka
Koji Nitta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP55159187A priority Critical patent/JPS5782110A/en
Publication of JPS5782110A publication Critical patent/JPS5782110A/en
Publication of JPS6144801B2 publication Critical patent/JPS6144801B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/076—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with titanium or zirconium or hafnium

Abstract

PURPOSE: To prepare high purity titanium nitride or titanium carbide, easily, at low cost, by mixing fine powder of anatase TiO2 with carbon powder having finer particle size, and heat-treating the mixture in N2 gas or an inert gas containing methane.
CONSTITUTION: Anatase titanium oxide having an average particle diameter of ≤0.5μm is mixed with carbon powder having finer particle size than the titanium oxide. The amount of the carbon powder is 2 times mol which corresponds to the amount necessary to reduce the titanium oxide to metallic Ti or 3 times mol which corresponds to the amount necessary to reduce the titanium oxide to metal and convert to carbide. In the former case, the objective titanium nitride is prepared by heat-treating at 1,300W1,500°C in N2 gas containing methane, and in the latter case, the titanium carbide is obtained by the heat-treatment at a temperature above 1,350°C and below the melting temperature of titanium carbide, in an inert gas containing methane.
COPYRIGHT: (C)1982,JPO&Japio
JP55159187A 1980-11-12 1980-11-12 Preparation of titanium nitride and titanium carbide Granted JPS5782110A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55159187A JPS5782110A (en) 1980-11-12 1980-11-12 Preparation of titanium nitride and titanium carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55159187A JPS5782110A (en) 1980-11-12 1980-11-12 Preparation of titanium nitride and titanium carbide

Publications (2)

Publication Number Publication Date
JPS5782110A true JPS5782110A (en) 1982-05-22
JPS6144801B2 JPS6144801B2 (en) 1986-10-04

Family

ID=15688208

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55159187A Granted JPS5782110A (en) 1980-11-12 1980-11-12 Preparation of titanium nitride and titanium carbide

Country Status (1)

Country Link
JP (1) JPS5782110A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213606A (en) * 1982-06-07 1983-12-12 Mitsubishi Metal Corp Preparation of titanium nitride powder
JPS61232211A (en) * 1985-04-08 1986-10-16 Kogyo Kaihatsu Kenkyusho Production of titanium carbide
JPH0196005A (en) * 1987-10-09 1989-04-14 Nippon Rejibon Kk Production of titanium nitride
US4975260A (en) * 1988-04-18 1990-12-04 Toshiba Ceramics Co., Ltd. Process for preparing metal nitride powder
CN102995004A (en) * 2012-12-24 2013-03-27 常州大学 Method for strengthening compounding of TiC on laser-induced metal surface layer by taking TiO2 and methane as components
RU2627142C1 (en) * 2016-05-10 2017-08-03 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Челябинский государственный педагогический университет" (ФГБОУ ВПО "ЧГПУ") Method of producing ultra-dispersed titanium carbide powder

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58213606A (en) * 1982-06-07 1983-12-12 Mitsubishi Metal Corp Preparation of titanium nitride powder
JPS6221723B2 (en) * 1982-06-07 1987-05-14 Mitsubishi Kinzoku Kk
JPS61232211A (en) * 1985-04-08 1986-10-16 Kogyo Kaihatsu Kenkyusho Production of titanium carbide
JPH0140766B2 (en) * 1985-04-08 1989-08-31 Kaihatsu Kenkyusho Ind Res
JPH0196005A (en) * 1987-10-09 1989-04-14 Nippon Rejibon Kk Production of titanium nitride
US4975260A (en) * 1988-04-18 1990-12-04 Toshiba Ceramics Co., Ltd. Process for preparing metal nitride powder
CN102995004A (en) * 2012-12-24 2013-03-27 常州大学 Method for strengthening compounding of TiC on laser-induced metal surface layer by taking TiO2 and methane as components
RU2627142C1 (en) * 2016-05-10 2017-08-03 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Челябинский государственный педагогический университет" (ФГБОУ ВПО "ЧГПУ") Method of producing ultra-dispersed titanium carbide powder

Also Published As

Publication number Publication date
JPS6144801B2 (en) 1986-10-04

Similar Documents

Publication Publication Date Title
WO2002016063A3 (en) Method for producing composite components by powder injection molding and composite powder appropriate for use in said method
US4406699A (en) High-temperature electrically conductive ceramic composite and method for making same
JPS5274509A (en) Ni-base sintered alloy
JPS5782110A (en) Preparation of titanium nitride and titanium carbide
JPS5274508A (en) Co-base sintered alloy
EP1452812A4 (en) Crucible for melting rare earth element alloy and rare earth element alloy
Shimada et al. Formation of NbC and TaC by solid-state reaction
JPS5562804A (en) Production of nitride
JPS5751231A (en) Manufacture of ferromagnetic aluminum-base parts
JPS5719352A (en) Molybdenum-scandium alloy
JPS55162499A (en) Covered diamond powder for whetstone and powder metallurgy
JPS5534664A (en) Carbon-containing referactory
CA2165087A1 (en) Process for preparing a powder mixture and its use
JPS579803A (en) Sintering method
JPS6424069A (en) Brick of sliding nozzle plate for special steel
KAMATA PREPARATION OF SUBMICROMETER AL 2 O 3 POWDER BY GAS-PHASE OXIDATION OF TRIS (ACETYLACETONATO) ALUMINIUM(III)
JPS5471004A (en) Method of producing sintered mineral excellent in strength to reduction
JPS5574452A (en) Preparation of oxygen concentration detecting element
JPS5690904A (en) Production of ferromagnetic metal powder
DE19741418A1 (en) Hard alloy based on titanium carbide, process for its production and its use
CA2144673A1 (en) Refractory Brick
SU1344511A1 (en) Charge for manufacturing sintered filters made of chrome-nickel steel
JPS54115688A (en) Reference oxygen producing composition for oxygen sensor
JPS5558343A (en) Manufacture of dispersion strengthening type alloy
JPS5575903A (en) Separating method for hydrogen from synthetic gas