JPS5776822A - Method of liquid phase epitaxial growth - Google Patents

Method of liquid phase epitaxial growth

Info

Publication number
JPS5776822A
JPS5776822A JP15313980A JP15313980A JPS5776822A JP S5776822 A JPS5776822 A JP S5776822A JP 15313980 A JP15313980 A JP 15313980A JP 15313980 A JP15313980 A JP 15313980A JP S5776822 A JPS5776822 A JP S5776822A
Authority
JP
Japan
Prior art keywords
melt
substrate
arms
pawls
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15313980A
Other languages
English (en)
Inventor
Toshihiro Suzuki
Shinichi Kasahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP15313980A priority Critical patent/JPS5776822A/ja
Publication of JPS5776822A publication Critical patent/JPS5776822A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01FMAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/24Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids
    • H01F41/28Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates from liquids by liquid phase epitaxy

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Thin Magnetic Films (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP15313980A 1980-10-31 1980-10-31 Method of liquid phase epitaxial growth Pending JPS5776822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15313980A JPS5776822A (en) 1980-10-31 1980-10-31 Method of liquid phase epitaxial growth

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15313980A JPS5776822A (en) 1980-10-31 1980-10-31 Method of liquid phase epitaxial growth

Publications (1)

Publication Number Publication Date
JPS5776822A true JPS5776822A (en) 1982-05-14

Family

ID=15555856

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15313980A Pending JPS5776822A (en) 1980-10-31 1980-10-31 Method of liquid phase epitaxial growth

Country Status (1)

Country Link
JP (1) JPS5776822A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174192A (ja) * 1985-01-29 1986-08-05 Tohoku Metal Ind Ltd 結晶成長方法
JPS63145865U (ja) * 1987-03-14 1988-09-27
US7048797B2 (en) 2002-09-19 2006-05-23 Canon Kabushiki Kaisha Liquid-phase growth process and liquid-phase growth apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174192A (ja) * 1985-01-29 1986-08-05 Tohoku Metal Ind Ltd 結晶成長方法
JPS63145865U (ja) * 1987-03-14 1988-09-27
US7048797B2 (en) 2002-09-19 2006-05-23 Canon Kabushiki Kaisha Liquid-phase growth process and liquid-phase growth apparatus

Similar Documents

Publication Publication Date Title
US3759671A (en) Horizontal growth of crystal ribbons
US3681033A (en) Horizontal growth of crystal ribbons
JPS5776822A (en) Method of liquid phase epitaxial growth
US4469552A (en) Process and apparatus for growing a crystal ribbon
US3944393A (en) Apparatus for horizontal production of single crystal structure
JPS5776821A (en) Liquid phase epitaxial growing method
JPS5777098A (en) Method and apparatus for growing znse in liquid phase
CN214458452U (zh) 一种砷化镓晶体生产用多晶生长炉
JPS5649520A (en) Vapor growth of compound semiconductor
JPS57129896A (en) Liquid phase epitaxial growing apparatus
JPS59182292A (ja) 帯状シリコン結晶製造装置
JPH02167883A (ja) 化合物半導体単結晶の製造方法及び装置
JPS55140800A (en) Crucible for crystal growing crucible device
Paunov et al. Orientation of Silver Vapor Deposited on Tungsten
JPS5228258A (en) Method for growth of crystals from liquid phase
JPS5575998A (en) Liquid phase epitaxial growing method
Thornhill Process and apparatus for growing a crystal ribbon
JPS57118092A (en) Manufacturing apparatus for beltlike silicon crystal
JPS6461381A (en) Method for growing single crystal
JP2830290B2 (ja) 単結晶の育成方法及びその装置
JPS54109080A (en) Crystal-growing method by limited-edge-crystal growing method
JPS5538039A (en) Device for liquid-phase growth of semiconductor
JPH0769798A (ja) CdTe結晶の製造方法
JP2751359B2 (ja) ▲iii▼―▲v▼族化合物単結晶
JPS52120290A (en) Production of gap single crystal