JPS5775485A - Manufacture of heat radiator for semiconductor laser device - Google Patents

Manufacture of heat radiator for semiconductor laser device

Info

Publication number
JPS5775485A
JPS5775485A JP55152466A JP15246680A JPS5775485A JP S5775485 A JPS5775485 A JP S5775485A JP 55152466 A JP55152466 A JP 55152466A JP 15246680 A JP15246680 A JP 15246680A JP S5775485 A JPS5775485 A JP S5775485A
Authority
JP
Japan
Prior art keywords
metals
metal
manufacture
heat radiator
die bonding
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55152466A
Other languages
Japanese (ja)
Inventor
Shigeyuki Nitsuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55152466A priority Critical patent/JPS5775485A/en
Publication of JPS5775485A publication Critical patent/JPS5775485A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/0235Method for mounting laser chips
    • H01S5/02375Positioning of the laser chips
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/024Arrangements for thermal management
    • H01S5/02476Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To simplify the manufacture of a heat radiator and to improve the die bonding of a laser device by a method wherein metals having good thermal conductivity and thermal expansion coefficient close to that of a semiconductor laser chip are previously adhered to a metal such as copper and the adhered metals are unitedly cut. CONSTITUTION:Belt-shaped metals 12 such as molybdenum having thermal expansion coefficient close to the that of a semiconductor chip 3 and good thermal conductivity comparing with that of silicon are adhered on a metal plate 11 having good thermal conductivity such as copper at fixed intervals. The metal plate 11 and the metals 12 are united at the line 13 dividing the metals 12 into two in the belt-shaped direction and the lines 14 crossing with the line 13 at right angles and cut at fixed intervals to manufacture a metal 22 serving as a plurality of heat sinks. Die bonding is applied to a laser chip 3 and a heat radiator made by the above process. Uneveness at the interface between the metal plates 21 and 22 is eliminated by simultaneously cutting the metal plates 21 and 22 and die bonding is made possible by only positioning the laser chip 3 to the metal plate 22 and the radiating point of light emitted from the end surface 4 and the direction of light are controlled with good accuracy.
JP55152466A 1980-10-29 1980-10-29 Manufacture of heat radiator for semiconductor laser device Pending JPS5775485A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55152466A JPS5775485A (en) 1980-10-29 1980-10-29 Manufacture of heat radiator for semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55152466A JPS5775485A (en) 1980-10-29 1980-10-29 Manufacture of heat radiator for semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS5775485A true JPS5775485A (en) 1982-05-12

Family

ID=15541120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55152466A Pending JPS5775485A (en) 1980-10-29 1980-10-29 Manufacture of heat radiator for semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS5775485A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0766354A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Laser diode construction element with heat sink

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0766354A1 (en) * 1995-09-29 1997-04-02 Siemens Aktiengesellschaft Laser diode construction element with heat sink
US5812570A (en) * 1995-09-29 1998-09-22 Siemens Aktiengesellschaft Laser diode component with heat sink and method of producing a plurality of laser diode components

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