JPS5773985A - Semiconductor light emitting device and manufacture thereof - Google Patents

Semiconductor light emitting device and manufacture thereof

Info

Publication number
JPS5773985A
JPS5773985A JP55150147A JP15014780A JPS5773985A JP S5773985 A JPS5773985 A JP S5773985A JP 55150147 A JP55150147 A JP 55150147A JP 15014780 A JP15014780 A JP 15014780A JP S5773985 A JPS5773985 A JP S5773985A
Authority
JP
Japan
Prior art keywords
light emitting
uniform
mold
semiconductor light
reflector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55150147A
Other languages
Japanese (ja)
Other versions
JPS6222557B2 (en
Inventor
Iwao Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55150147A priority Critical patent/JPS5773985A/en
Publication of JPS5773985A publication Critical patent/JPS5773985A/en
Publication of JPS6222557B2 publication Critical patent/JPS6222557B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H01L33/60—Reflective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To obtain a semiconductor light emitting device having uniform light emitting surface and high intensity by providing fine and uniform concave lens condensing surface on the inner bottom surface of a box when semiconductor light emitting elements are contained in a mold of the box and containing cylindrical reflector, and inserting the elements thereinto. CONSTITUTION:Fine and uniform lens condensing surface is formed on the inner bottom surface of a mold 10 of square synthetic resin opened on the upper surface, a reflecting surface 17a expanding toward the condensing surface, gimbals 17b, 17c are formed on the outer periphery of the upper end, and a matrix relfector 17 having projection 17d is contained on the upper end. A light emitting element assembly 5 temporarily secured with tie bars 20, 20' in the reflector 17 is inserted while disposing on the expanding surface of the reflector at the light emitting unit, molding resin 6 is filled by a nozzle 16 in the mold 10, is then hardened, and the tie bars 20, 20' are isolated. Thus, uniform and high intensity light emitting surface can be obtained, and the inclination of the light emitting surface can be avoided when a plurality of the light emitting surfaces are arrayed.
JP55150147A 1980-10-28 1980-10-28 Semiconductor light emitting device and manufacture thereof Granted JPS5773985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55150147A JPS5773985A (en) 1980-10-28 1980-10-28 Semiconductor light emitting device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55150147A JPS5773985A (en) 1980-10-28 1980-10-28 Semiconductor light emitting device and manufacture thereof

Publications (2)

Publication Number Publication Date
JPS5773985A true JPS5773985A (en) 1982-05-08
JPS6222557B2 JPS6222557B2 (en) 1987-05-19

Family

ID=15490515

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55150147A Granted JPS5773985A (en) 1980-10-28 1980-10-28 Semiconductor light emitting device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5773985A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2565726A1 (en) * 1984-06-08 1985-12-13 Radiotechnique Compelec Method of producing a signalling light panel with electroluminescent diodes and panel thus obtained
WO1999025031A1 (en) * 1997-11-06 1999-05-20 Donnelly Corporation Light emitting element having an optical element molded in a surface thereof
JP2006134992A (en) * 2004-11-04 2006-05-25 Hitachi Displays Ltd Light source unit, lighting system using it and display device using lighting system
JPWO2005083805A1 (en) * 2004-02-26 2010-01-21 パナソニック株式会社 LED light source

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2565726A1 (en) * 1984-06-08 1985-12-13 Radiotechnique Compelec Method of producing a signalling light panel with electroluminescent diodes and panel thus obtained
WO1999025031A1 (en) * 1997-11-06 1999-05-20 Donnelly Corporation Light emitting element having an optical element molded in a surface thereof
JPWO2005083805A1 (en) * 2004-02-26 2010-01-21 パナソニック株式会社 LED light source
JP2006134992A (en) * 2004-11-04 2006-05-25 Hitachi Displays Ltd Light source unit, lighting system using it and display device using lighting system

Also Published As

Publication number Publication date
JPS6222557B2 (en) 1987-05-19

Similar Documents

Publication Publication Date Title
GR3030516T3 (en) Process and device for production of moulded parts as well as the so manufactured parts.
IL110394A0 (en) A process and device for the manufacture of mouldings and mouldings manufactured in accordance with that process
ES2091406T3 (en) MANUFACTURING PROCEDURE OF AN ARTICLE MOLDED WITH DRAWING.
JPS5773985A (en) Semiconductor light emitting device and manufacture thereof
JPS63283174A (en) Light emitting diode
JPS5524404A (en) Semiconductor light emitting device
JPS57165802A (en) Manufacture of light-shielding plate
JPS56103481A (en) Manufacture of semiconductor device for photoelectric conversion
JPS57187224A (en) Manufacture of lens unit at assembled optical system
JPS5646574A (en) Photoelectric converter
IT8322568A0 (en) RESIN FOR HIGH REFRACTIVITY LENSES AND LENSES PRODUCED WITH THE RESIN ITSELF.
JPS5728392A (en) Optical semiconductor device
JPS5742002A (en) Solar light condenser
JPS6482681A (en) Compound lens type photodetector/light emitting element
JPS55123181A (en) Lead frame for light emitting diode
JPS56103483A (en) Manufacture of semiconductor device for photoelectric conversion
JPS5689921A (en) Production of disc and apparatus therefor
JPS6427639A (en) Ultraviolet ray irradiation device
JPS5650587A (en) Manufacture of light emitting diode
JPS57605A (en) Forming method for platelike lens
GB8701879D0 (en) Lens
JPS6436839A (en) Elastic and plastic damper
JPS5745270A (en) Semiconductor device
JPS578121A (en) Molding method of flat lens
JPS533784A (en) Light emitting diode for optical fibers and its production