JPS5771575A - Memory device - Google Patents

Memory device

Info

Publication number
JPS5771575A
JPS5771575A JP14714380A JP14714380A JPS5771575A JP S5771575 A JPS5771575 A JP S5771575A JP 14714380 A JP14714380 A JP 14714380A JP 14714380 A JP14714380 A JP 14714380A JP S5771575 A JPS5771575 A JP S5771575A
Authority
JP
Japan
Prior art keywords
line
memory device
fetqf
discharge
high speed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14714380A
Other languages
Japanese (ja)
Other versions
JPS6126156B2 (en
Inventor
Eiji Sugimoto
Takeshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14714380A priority Critical patent/JPS5771575A/en
Publication of JPS5771575A publication Critical patent/JPS5771575A/en
Publication of JPS6126156B2 publication Critical patent/JPS6126156B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines

Landscapes

  • Read Only Memory (AREA)

Abstract

PURPOSE:To realize a large capacity and a high speed of a memory device formed by an element which is capable of making a current flow or not in accordance with the memory contents, by controlling the charge and discharge of digit line through a reverse amplifier, a feedback resistance, an IFGET, etc. CONSTITUTION:In case a memory cell MC of an addressed matrix array is non- conducting, an output of a reverse amplifier IV becomes an approximate value to voltage of an electric power supply CC, and a large current is supplied to a digit line DL through a feedback IGFETQF. As a result, the line DL is charged rapidly by a small time constant being in inverse proportion to an amplification factor A of the FETQF by the FETQF and a feedback resistance RF. Discharge of the line DL in case the cell MC being in conduction is executed rapidly in the same way. Accordingly, a large capacity and a high speed of a semiconductor memory device formed by a static memory cell group realized.
JP14714380A 1980-10-21 1980-10-21 Memory device Granted JPS5771575A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14714380A JPS5771575A (en) 1980-10-21 1980-10-21 Memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14714380A JPS5771575A (en) 1980-10-21 1980-10-21 Memory device

Publications (2)

Publication Number Publication Date
JPS5771575A true JPS5771575A (en) 1982-05-04
JPS6126156B2 JPS6126156B2 (en) 1986-06-19

Family

ID=15423547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14714380A Granted JPS5771575A (en) 1980-10-21 1980-10-21 Memory device

Country Status (1)

Country Link
JP (1) JPS5771575A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60101797A (en) * 1983-11-07 1985-06-05 Hitachi Ltd Semiconductor storage circuit device
JPS60150297A (en) * 1984-01-13 1985-08-07 Nec Corp Memory
JPS6151696A (en) * 1984-08-22 1986-03-14 Hitachi Micro Comput Eng Ltd Semiconductor memory

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60101797A (en) * 1983-11-07 1985-06-05 Hitachi Ltd Semiconductor storage circuit device
JPS60150297A (en) * 1984-01-13 1985-08-07 Nec Corp Memory
US4761765A (en) * 1984-01-13 1988-08-02 Nec Corporation Semiconductor memory device having improved data output circuit
JPH0346915B2 (en) * 1984-01-13 1991-07-17 Nippon Electric Co
JPS6151696A (en) * 1984-08-22 1986-03-14 Hitachi Micro Comput Eng Ltd Semiconductor memory
JPH0522999B2 (en) * 1984-08-22 1993-03-31 Hitachi Maikon Shisutemu Kk

Also Published As

Publication number Publication date
JPS6126156B2 (en) 1986-06-19

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