JPS5771185A - Iii-v group semiconductor device and method of fabricating same - Google Patents

Iii-v group semiconductor device and method of fabricating same

Info

Publication number
JPS5771185A
JPS5771185A JP56130387A JP13038781A JPS5771185A JP S5771185 A JPS5771185 A JP S5771185A JP 56130387 A JP56130387 A JP 56130387A JP 13038781 A JP13038781 A JP 13038781A JP S5771185 A JPS5771185 A JP S5771185A
Authority
JP
Japan
Prior art keywords
iii
semiconductor device
group semiconductor
fabricating same
fabricating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP56130387A
Other languages
English (en)
Other versions
JPH0552058B2 (ja
Inventor
Jiyuan Baserasu Arekusandaa
Aasaa Deasaro Rushian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of JPS5771185A publication Critical patent/JPS5771185A/ja
Publication of JPH0552058B2 publication Critical patent/JPH0552058B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H01L21/30621—Vapour phase etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Weting (AREA)
JP56130387A 1980-08-22 1981-08-21 Iii-v group semiconductor device and method of fabricating same Granted JPS5771185A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/180,358 US4403241A (en) 1980-08-22 1980-08-22 Method for etching III-V semiconductors and devices made by this method

Publications (2)

Publication Number Publication Date
JPS5771185A true JPS5771185A (en) 1982-05-01
JPH0552058B2 JPH0552058B2 (ja) 1993-08-04

Family

ID=22660155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56130387A Granted JPS5771185A (en) 1980-08-22 1981-08-21 Iii-v group semiconductor device and method of fabricating same

Country Status (3)

Country Link
US (1) US4403241A (ja)
JP (1) JPS5771185A (ja)
DE (1) DE3132555A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117631A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 化合物半導体のドライエッチング方法

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3485368D1 (de) * 1983-11-30 1992-01-30 Toshiba Kawasaki Kk Verfahren zur herstellung eines halbleiterlasers.
US4713678A (en) * 1984-12-07 1987-12-15 Texas Instruments Incorporated dRAM cell and method
US4842699A (en) * 1988-05-10 1989-06-27 Avantek, Inc. Method of selective via-hole and heat sink plating using a metal mask
US4808273A (en) * 1988-05-10 1989-02-28 Avantek, Inc. Method of forming completely metallized via holes in semiconductors
US4978639A (en) * 1989-01-10 1990-12-18 Avantek, Inc. Method for the simultaneous formation of via-holes and wraparound plating on semiconductor chips
JPH02271558A (ja) * 1989-04-12 1990-11-06 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP2839376B2 (ja) * 1991-02-05 1998-12-16 三菱電機株式会社 半導体装置の製造方法
JPH05299705A (ja) * 1992-04-16 1993-11-12 Kobe Steel Ltd ダイヤモンド薄膜電子デバイス及びその製造方法
DE19632626A1 (de) * 1996-08-13 1998-02-19 Siemens Ag Verfahren zum Herstellen von Halbleiterkörpern mit MOVPE-Schichtenfolge
US6908845B2 (en) * 2002-03-28 2005-06-21 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
US6848177B2 (en) 2002-03-28 2005-02-01 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
US20030183943A1 (en) * 2002-03-28 2003-10-02 Swan Johanna M. Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
JP2019121750A (ja) * 2018-01-11 2019-07-22 東京エレクトロン株式会社 エッチング方法およびエッチング装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367374A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of schottky barrier field effect transistor
JPS54163688A (en) * 1978-06-15 1979-12-26 Nippon Electric Co Preparation of semiconductor element

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7310279A (ja) * 1972-07-31 1974-02-04
US3986196A (en) * 1975-06-30 1976-10-12 Varian Associates Through-substrate source contact for microwave FET
US4171234A (en) * 1976-07-20 1979-10-16 Matsushita Electric Industrial Co., Ltd. Method of fabricating three-dimensional epitaxial layers utilizing molecular beams of varied angles
US4162337A (en) * 1977-11-14 1979-07-24 Bell Telephone Laboratories, Incorporated Process for fabricating III-V semiconducting devices with electroless gold plating
US4208241A (en) * 1978-07-31 1980-06-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5367374A (en) * 1976-11-27 1978-06-15 Nec Corp Manufacture of schottky barrier field effect transistor
JPS54163688A (en) * 1978-06-15 1979-12-26 Nippon Electric Co Preparation of semiconductor element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60117631A (ja) * 1983-11-30 1985-06-25 Toshiba Corp 化合物半導体のドライエッチング方法
JPH0224016B2 (ja) * 1983-11-30 1990-05-28 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
DE3132555A1 (de) 1982-06-16
US4403241A (en) 1983-09-06
JPH0552058B2 (ja) 1993-08-04

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