JPS5768050A - Multilayer wire structure and manufacture thereof - Google Patents

Multilayer wire structure and manufacture thereof

Info

Publication number
JPS5768050A
JPS5768050A JP14290280A JP14290280A JPS5768050A JP S5768050 A JPS5768050 A JP S5768050A JP 14290280 A JP14290280 A JP 14290280A JP 14290280 A JP14290280 A JP 14290280A JP S5768050 A JPS5768050 A JP S5768050A
Authority
JP
Japan
Prior art keywords
film
layer
insulating film
wire
stepwise difference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14290280A
Other languages
Japanese (ja)
Inventor
Tokio Kato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14290280A priority Critical patent/JPS5768050A/en
Publication of JPS5768050A publication Critical patent/JPS5768050A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To improve the reliability of a multilayer wire structure by forming an interlayer film and a passivation film of inorganic film, and rotatably coating polyimide resin liquid on an interlayer film stepped part, filling the resin therein, and thereby preventing the shortcircuit due to the disconnection at the stepwise difference and crack of the insulating film. CONSTITUTION:The first wire layer 3 formed, for example, on the insulating film 1 of a substrate 2 of aluminum is covered with a PSG film 4, is rotatably coated with a polyimide resin layer 7, is backed and hardened. Then, it is treated with oxygen plasma to retain the resin layer 7 only at the stepwise difference 8, and a connecting hole 9 is formed at the interlayer film 4. Subsequently, the second wire layer 5 of aluminum is formed, a PSG film 6 is formed as a final passivation film on the overall surface, and a multilayer wire is completed. When the layer 7 is formed thinly (e.g., 2,000-4,000 Angstrom in case that the films 4, 6 have approx. 8,000 Angstrom ), the plasma etching is omitted, and may be retained as a buffer layer on the overall surface. In this manner the stepwise difference can be smoothened, and it can prevent the exfoliation, crack at the inorganic insulating film, thereby improving the reliability.
JP14290280A 1980-10-15 1980-10-15 Multilayer wire structure and manufacture thereof Pending JPS5768050A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14290280A JPS5768050A (en) 1980-10-15 1980-10-15 Multilayer wire structure and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14290280A JPS5768050A (en) 1980-10-15 1980-10-15 Multilayer wire structure and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5768050A true JPS5768050A (en) 1982-04-26

Family

ID=15326255

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14290280A Pending JPS5768050A (en) 1980-10-15 1980-10-15 Multilayer wire structure and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5768050A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601846A (en) * 1983-06-18 1985-01-08 Toshiba Corp Multilayer interconnection structure semiconductor device and manufacture thereof
JPS61116858A (en) * 1984-10-24 1986-06-04 Fujitsu Ltd Formation of interlaminar insulating film
JPH0393253A (en) * 1989-08-31 1991-04-18 Delco Electron Corp Integrated circuit and method of manufacturing the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS601846A (en) * 1983-06-18 1985-01-08 Toshiba Corp Multilayer interconnection structure semiconductor device and manufacture thereof
JPS61116858A (en) * 1984-10-24 1986-06-04 Fujitsu Ltd Formation of interlaminar insulating film
JPH0329298B2 (en) * 1984-10-24 1991-04-23 Fujitsu Ltd
JPH0393253A (en) * 1989-08-31 1991-04-18 Delco Electron Corp Integrated circuit and method of manufacturing the same

Similar Documents

Publication Publication Date Title
JPS601846A (en) Multilayer interconnection structure semiconductor device and manufacture thereof
EP0387098A3 (en) Process for making a multilevel interconnection structure
JPS5768050A (en) Multilayer wire structure and manufacture thereof
JPS57170550A (en) Manufacture of semiconductor device
JPH06267943A (en) Manufacture of semiconductor device
JPS5759359A (en) Manufacture of semiconductor device
JPS5748249A (en) Semiconductor device
JPS56125855A (en) Manufacture of semiconductor device
JPS56125856A (en) Manufacture of semiconductor device
JPH0419707B2 (en)
JPS5513904A (en) Semiconductor device and its manufacturing method
JPS645038A (en) Semiconductor device
JPS6051262B2 (en) semiconductor equipment
JPS6482652A (en) Manufacture of semiconductor device
JPS56144553A (en) Manufacture of semiconductor device
JPS56105670A (en) Semiconductor device
JPS57162448A (en) Formation of multilayer wiring
JPS5756948A (en) Manufacture of semiconductor device
JPS57103333A (en) Manufacture of semiconductor device
JPS56104450A (en) Manufacture of semiconductor device
JPS6484735A (en) Manufacture of semiconductor device
JPS56155550A (en) Multilayer wiring structure and manufacture thereof
JPS57111046A (en) Multilayer wiring layer
JPS5730344A (en) Semiconductor device
JPS644047A (en) Semiconductor device